Abstract translation:本发明提供一种使用50μm以下的树脂基材时,具有充分的阻气性的阻气膜。 该阻气膜被构造成包括:厚度为3-50μm的树脂基底; 含有无机化合物的第一阻气层; 通过对包含聚硅氮烷的涂布液进行涂布和干燥而得到的具有满足由SiO w N x表示的组成范围的区域(其中0.2
Abstract:
An edge-emitting type light-emitting device (11000, 14000) comprises an organic light-emitting layer (40), a pair of electrode layers (30) and (50) for applying an electric field to the organic light-emitting layer (40), and an optical waveguide which transmits light emitted from the organic light-emitting layer (40) to the edge. The optical waveguide comprises a core layer (20) mainly transmitting light, and cladding layers (10) and (60) having a refractive index lower than that of the core layer (20). The core layer (20) may be a layer different from the organic light-emitting layer (40) or may comprise the organic light-emitting layer. A grating (12) is formed in the core layer (20) or in the boundary area between the core layer (20) and the cladding layer (10). A light-emitting device (31000) may comprise an optical fibre section (200). Another embodiment (43000) may comprise a defect and a grating having a one-dimensional periodic refractive index distribution and constituting a photonic band gap.
Abstract:
An edge-emitting type light-emitting device (11000, 14000) comprises an organic light-emitting layer (40), a pair of electrode layers (30) and (50) for applying an electric field to the organic light-emitting layer (40), and an optical waveguide which transmits light emitted from the organic light-emitting layer (40) to the edge. The optical waveguide comprises a core layer (20) mainly transmitting light, and cladding layers (10) and (60) having a refractive index lower than that of the core layer (20). The core layer (20) may be a layer different from the organic light-emitting layer (40) or may comprise the organic light-emitting layer. A grating (12) is formed in the core layer (20) or in the boundary area between the core layer (20) and the cladding layer (10). A light-emitting device (31000) may comprise an optical fibre section (200). Another embodiment (43000) may comprise a defect and a grating having a one-dimensional periodic refractive index distribution and constituting a photonic band gap.
Abstract:
A novel display panel that is highly convenient or reliable is provided. A structure in invented which includes a first display element, a first conductive film, a second conductive film, a first insulating film, an intermediate film, a pixel circuit, and a second display element. The first conductive film is electrically connected to the first display element. The second conductive film includes a region overlapping with the first conductive film. The first insulating film includes a region located between the second conductive film and the first conductive film. The first conductive film is located between the second conductive film and part of the intermediate film. The pixel circuit is electrically connected to the second conductive film. The second display element is electrically connected to the pixel circuit. The first insulating film has an opening. The second conductive film is electrically connected to the first conductive film through the opening.
Abstract:
An organic light-emitting diode (OLED) light source comprising the following layers, in order: (i) a biaxially oriented polyester film substrate comprising light-scattering particles (P1); (ii) optionally an organic planarising coating layer (OPC1); (iii) optionally a barrier layer (B1); (iv) an organic planarising coating layer (OPC2) comprising light-scattering particles (P2); (v) optionally a barrier layer (B2); and (vi) a multi-layer light-emitting assembly comprising a first electrode, a light-emitting organic layer and a second electrode; wherein said OLED light source comprises at least one of barrier layers (B1) and (B2); and a method of fabricating said OLED light source.
Abstract:
Disclosed are light-emitting transistors having novel structures that can lead to enhanced device brightness, specifically, via new arrangements of electrodes (4, 12, 14) that can favor carrier recombination and exciton formation.