公开(公告)号：WO2013039503A1

公开(公告)日：2013-03-21

申请号：PCT/US2011/051833

申请日：2011-09-15

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  FATTAL, David, A. ,  TAN, Michael Renne Ty ,  BEAUSOLEIL, Raymond, G.

Inventor： FATTAL, David, A. ,  TAN, Michael Renne Ty ,  BEAUSOLEIL, Raymond, G.

IPC: H01S5/183 ,  H01S5/42

CPC classification number: H01S5/183 ,  H01S5/105 ,  H01S5/1833 ,  H01S5/18358 ,  H01S5/18363 ,  H01S5/187 ,  H01S5/4087 ,  H01S5/423

Abstract: Vertical-cavity surface-emitting lasers ("VCSELs") and VCSEL arrays are disclosed. In one aspect, a surface-emitting laser includes a grating layer having to form a resonant cavity with a reflective layer for a wavelength of light to be emitted from a light-emitting layer and an aperture layer disposed within the resonant cavity. The VCSEL includes a charge carrier transport layer disposed between the grating layer and the light-emitting layer. The transport layer has a gap adjacent to the sub-wavelength grating and a spacer region between the gap and the light-emitting layer. The spacer region and gap are dimensioned to be substantially transparent to the wavelength. The aperture layer directs charge carriers to enter a region of the light-emitting layer adjacent to an aperture in the aperture layer and the aperture confines optical modes to be emitted from the light-emitting layer.

Abstract translation: 公开了垂直腔表面发射激光器（“VCSEL”）和VCSEL阵列。 一方面，表面发射激光器包括光栅层，该光栅层必须形成具有用于从发光层发射的波长的反射层的谐振腔和设置在谐振腔内的孔层。 VCSEL包括设置在光栅层和发光层之间的电荷载流子传输层。 传输层具有与亚波长光栅相邻的间隙和间隙和发光层之间的间隔区。 间隔区域和间隙被确定为对波长基本上是透明的。 孔径层引导电荷载流子进入邻近孔径层中的孔的发光层的区域，并且该孔限制要从发光层发射的光学模式。

公开(公告)号：WO2010136453A1

公开(公告)日：2010-12-02

申请号：PCT/EP2010/057160

申请日：2010-05-25

Applicant: UNIVERSITÄT KASSEL ,  KUSSEROW, Thomas ,  HILLMER, Hartmut

Inventor： KUSSEROW, Thomas ,  HILLMER, Hartmut

IPC: G02B5/28 ,  H01S5/183

CPC classification number: G02B5/288 ,  H01S3/0627 ,  H01S3/0635 ,  H01S3/08031 ,  H01S5/0654 ,  H01S5/1071 ,  H01S5/1833 ,  H01S5/2027

Abstract: Bei einer optischen Dünnschichtstruktur (2) mit einer periodischen Variation des Brechungsindex längs einer optischen Achse (1), wobei die Variation eine Vielzahl von Perioden umfasst und wobei eine optische Länge der Perioden längs der optischen Achse (1) innerhalb der Dünnschichtstruktur (2) erhöht ist, um eine optische Kavität zwischen Distributed-Bragg-Reflektoren auszubilden, ist die Erhöhung der optischen Länge zur Ausbildung der optischen Kavität über mehrere Perioden der Variation des Brechungsindex verteilt.

Abstract translation: 在光学薄膜结构（2）与所述折射率沿光轴（1）的周期性变化，其中所述变化包括多个周期，并且其中沿所述光轴（1）的薄膜结构内增加周期的光学长度（2） 是形成分布布拉格反射器之间的光学腔，在光学长度的增加被分配到形成在所述折射率的变化的几个周期的光学腔。

公开(公告)号：WO2008029283A3

公开(公告)日：2008-12-18

申请号：PCT/IB2007003510

申请日：2007-06-06

Applicant: LEDENTSOV NIKOLAI ,  SHCHUKIN VITALY

Inventor： LEDENTSOV NIKOLAI ,  SHCHUKIN VITALY

IPC: H01S5/183 ,  H01L31/00 ,  H01L33/00 ,  H01L33/10 ,  H01S5/00 ,  H01S5/026 ,  H01S5/028 ,  H01S5/042 ,  H01S5/062 ,  H01S5/12 ,  H01S5/20

CPC classification number: H01S5/1833 ,  H01L31/02327 ,  H01L31/1035 ,  H01L33/0045 ,  H01L33/105 ,  H01S5/0014 ,  H01S5/0264 ,  H01S5/0265 ,  H01S5/0285 ,  H01S5/0425 ,  H01S5/062 ,  H01S5/1218 ,  H01S5/1221 ,  H01S5/18302 ,  H01S5/18311 ,  H01S5/18313 ,  H01S5/18316 ,  H01S5/18341 ,  H01S5/2004 ,  H01S5/2027 ,  H01S5/205

Abstract: A vertically integrated optoelectronic device allows high- speed data transfer by direct or indirect modulation of the intensity of the emitted light. The device comprises at least one multilayer interference reflector and at least one cavity. In one embodiment the reflector operates as a modulator element controlled by an applied voltage. The stopband edge of the reflector is electrooptically tuned using the quantum confined Stark effect in the vicinity of the cavity mode, resulting in a modulated transmittance of the reflector and, thus, in indirect modulation of light intensity. In another embodiment, the optical field profile in the cavity is affected by the shift of the stopband wavelength, and the device operates as a wavelength- tunable light emitter. In yet another embodiment, two or more refractive index periodicities are integrated in the reflector, suppressing parasitic optical modes and enabling a high-speed direct modulation of the intensity of light emitted by the device.

Abstract translation: 垂直集成的光电子器件允许通过直接或间接调制发射光的强度进行高速数据传输。 该装置包括至少一个多层干涉反射器和至少一个空腔。 在一个实施例中，反射器作为由施加电压控制的调制器元件工作。 反射器的阻带边缘在腔模式附近使用量子限制的斯塔克效应进行电光调谐，导致反射器的调制透射率，因此间接调制光强度。 在另一个实施例中，空腔中的光场分布受到阻带波长的偏移的影响，并且器件作为波长可调光发射器工作。 在另一个实施例中，两个或更多个折射率周期性集成在反射器中，抑制寄生光学模式并使得能够高速直接调制由器件发射的光的强度。

公开(公告)号：WO2006136346A1

公开(公告)日：2006-12-28

申请号：PCT/EP2006/005835

申请日：2006-06-19

Applicant: VRIJE UNIVERSITEIT BRUSSEL ,  ARIZALETA ARTEAGA, Mikel ,  PANAYOTOV, Krassimir ,  THIENPONT, Hugo

Inventor： ARIZALETA ARTEAGA, Mikel ,  PANAYOTOV, Krassimir ,  THIENPONT, Hugo

IPC: H01S5/183 ,  H01S5/14 ,  H01S5/06 ,  H01S5/062 ,  H01S5/068 ,  H01S5/10

CPC classification number: B82Y20/00 ,  H01S5/0607 ,  H01S5/06236 ,  H01S5/0656 ,  H01S5/06821 ,  H01S5/1021 ,  H01S5/142 ,  H01S5/18302 ,  H01S5/18311 ,  H01S5/1833 ,  H01S5/18355 ,  H01S5/18386 ,  H01S5/34313

Abstract: A Vertical-Cavity Surface-Emitting Laser has a resonant cavity (3,5) and an external cavity (6,15) formed as a monolithic structure, the external cavity being arranged to provide loss differences for different linearly polarised modes, the loss differences being arranged to provide an output with a stable polarisation state. Compared to the known polarisation stability techniques, this enables a stable polarisation output without the complexity of modification of the VCSEL structure, less sensitivity to small changes of injected current and temperature, and less need for the complex, non monolithic optical parts. Active polarisation control and stabilisation in the same device can be achieved by growing a polarisation dependent mirror on top of the VCSEL and by applying an external field to alter an optical length of the external cavity.

Abstract translation: 垂直腔表面发射激光器具有形成为单体结构的谐振腔（3,5）和外腔（6,15），所述外腔被布置成为不同线性偏振模式提供损耗差，损耗差 被布置成提供具有稳定偏振状态的输出。 与已知的偏振稳定性技术相比，这使得能够实现稳定的偏振输出，而不需要对VCSEL结构进行修改的复杂性，对注入的电流和温度的小变化的敏感性较小，并且对复杂的非单片光学部件的需求较少。 可以通过在VCSEL的顶部生长偏振相关的反射镜并施加外部场来改变外部空腔的光学长度来实现同一器件中的主动偏振控制和稳定化。

公开(公告)号：WO2005089521A2

公开(公告)日：2005-09-29

申请号：PCT/US2005/009478

申请日：2005-03-21

Applicant: ARIZONA BOARD OF REGENTS ,  SAMAL, Nigamananda ,  JOHNSON, Shane ,  ZHANG, Yong-Hang

Inventor： SAMAL, Nigamananda ,  JOHNSON, Shane ,  ZHANG, Yong-Hang

IPC: H01S5/183

CPC classification number: H01S5/1833 ,  H01S5/0207 ,  H01S5/024 ,  H01S5/18311 ,  H01S5/18313 ,  H01S2301/166 ,  H01S2301/20

Abstract: A single mode high power laser device such as a VCSEL is formed with two oxide apertures, one on each side of the active region or cavity. The sizes of the apertures and the distances from the apertures to the cavity center are chosen or optimum, near-Gaussian current density distribution. The high power of a VCSEL thus formed is improved still more by good heat removal by either formation of a via through the substrate and gold plating on top and bottom of the VCSEL (including the via) or by lifting the VCSEL structure from the substrate and locating it on a heat sink.

Abstract translation: 诸如VCSEL的单模高功率激光器件形成有两个氧化物孔，一个在有源区或空腔的每一侧上。 选择孔径的尺寸以及从孔到腔中心的距离或最佳的近似高斯电流密度分布。 通过在VCSEL（包括通孔）的顶部和底部形成通孔以及通过衬底的顶部和底部的金镀层或者通过从衬底提升VCSEL结构，通过良好的散热来改善如此形成的VCSEL的高功率，以及 将其放在散热器上。

公开(公告)号：WO2004049528A2

公开(公告)日：2004-06-10

申请号：PCT/US2003/040047

申请日：2003-11-20

Applicant: HONEYWELL INTERNATIONAL INC.

Inventor： JOHNSON, Ralph, H. ,  WANG, Tzu-Yu

IPC: H01S5/183

CPC classification number: H01S5/18308 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18316 ,  H01S5/1833 ,  H01S5/18369 ,  H01S5/18377 ,  H01S5/2063 ,  H01S5/3095

Abstract: A vertical cavity having a tunnel junction surface emitting laser (VCSEL) for emitting long wavelength light (i.e., 1200 to 1800 nanometers, though it is contemplated that the structures and techniques are applicable to other wavelength VCSELs). The tunnel junction may be isolated with an implant down into the top mirror through the tunnel junction and p-layer and a trench around the VCSEL down to at least past the tunnel junction. The trench may result in reduced capacitance and D.C. isolation of the tunnel junction. The implant is performed after the trench is made. Some of the implant may enter the bottom of the trench into the bottom mirror for some further isolation for the tunnel junction of the VCSEL. Further isolation and some current confinement may be provided with lateral oxidation of a layer below the tunnel junction. Internal trenches may be made from the top of the VCSEL vertically down to the oxidizable layer below the tunneljunction. Oxidation of that layer via these trenches may provide further isolation of the tunnel junction. Also, a bonding pad connected to a contact on the VCSEL with a bridge may have an open trench about their periphery for their isolation. Internal trenches may be placed on the pad and its bridge that go down vertically to the oxidizable layer. Oxidation via these trenches may provide further isolation for the pad and bridge if the latter is present.

Abstract translation: 具有用于发射长波长光的隧道结表面发射激光器（VCSEL）的垂直腔（即1200至1800纳米，尽管预期该结构和技术可应用于其它波长VCSEL）。 隧道结可以通过隧道结和p层以及VCSEL周围的沟槽沿着至少穿过隧道结的方式与植入物隔离成上反射镜。 沟道可能会导致隧道结的电容和直流隔离。 在制造沟槽之后执行注入。 一些植入物可以进入沟槽的底部进入底部反射镜，以进一步隔离VCSEL的隧道结。 可以在隧道结下方的层的侧向氧化提供进一步隔离和一些电流限制。 内部沟槽可以从VCSEL的顶部垂直向下到达隧道结下方的可氧化层。 通过这些沟槽氧化该层可以进一步隔离隧道结。 此外，连接到具有桥接器的VCSEL上的接触件的接合焊盘可以围绕其外围具有敞开的沟槽用于隔离。 内部沟槽可以放置在垂直于可氧化层的衬垫及其桥上。 通过这些沟槽的氧化可以为衬垫和桥梁提供进一步隔离，如果后者存在的话。

公开(公告)号：WO2004036707A2

公开(公告)日：2004-04-29

申请号：PCT/US2003/027685

申请日：2003-09-02

Applicant: HONEYWELL INTERNATIONAL INC.

Inventor： TATUM, James, A. ,  JOHNSON, Ralph, H. ,  GUENTER, James, K.

IPC: H01S5/00

CPC classification number: H01S5/18341 ,  H01S5/005 ,  H01S5/0207 ,  H01S5/18305 ,  H01S5/1833 ,  H01S5/18369 ,  H01S2301/166

Abstract: A VCSEL having a metallic heat spreading layer adjacent a semiconductor buffer layer containing an insulating structure. The heat spreading layer includes an opening that enables light emitted by an active region to reflect from a distributed Bragg reflector (DBR) top mirror located above the heat spreading layer. A substrate is below the active region. A lower contact provides electrical current to that substrate. The lower contact includes an opening that enables light emitted from the active region to reflect from a distributed Bragg reflector (DBR) lower mirror. Beneficially, the substrate includes a slot that enables light to pass through an opening in the lower contact. That slot acts as an alignment structure that enables optical alignment of an external feature to the VCSEL.

Abstract translation: 具有金属散热层的VCSEL，该金属热扩散层与包含绝缘结构的半导体缓冲层相邻。 散热层包括使有源区域发射的光能够从位于散热层上方的分布式布拉格反射镜（DBR）上反射镜反射的开口。 底物低于活性区。 较低的触点为该基片提供电流。 下部接触件包括使从有源区域发射的光能够从分布式布拉格反射镜（DBR）下反射镜的开口。 有利地，衬底包括使光能够穿过下接触件中的开口的狭槽。 该槽作为对准结构，使外部特征能够与VCSEL进行光学对准。

公开(公告)号：WO03043247A2

公开(公告)日：2003-05-22

申请号：PCT/US0236598

申请日：2002-11-14

Applicant: MASSACHUSETTS INST TECHNOLOGY

Inventor： PETRICH GALE S ,  KOLODZIEJSKI LESLIE A

IPC: G02B6/12 ,  H01S3/063 ,  H01S3/23 ,  H01S5/026 ,  H01S5/0625 ,  H01S5/0687 ,  H01S5/10 ,  H01S5/183 ,  H01S5/34 ,  H01S5/40 ,  H01S5/50 ,  H04J14/00

CPC classification number: B82Y20/00 ,  G02B6/12004 ,  G02B6/12007 ,  G02B2006/12109 ,  H01S3/063 ,  H01S3/2383 ,  H01S5/02248 ,  H01S5/026 ,  H01S5/06256 ,  H01S5/0687 ,  H01S5/1032 ,  H01S5/1071 ,  H01S5/18311 ,  H01S5/1833 ,  H01S5/3412 ,  H01S5/4025 ,  H01S5/50

Abstract: A photonic circuit includes a tunable drop filter arrangement that includes a plurality of resonators. The drop filter arrangement is tuned to remove a selected frequency from an input data stream from a waveguide. A wavelength sensor coupled to the drop filter to monitor the selected frequency to which the drop filter arrangement has been tuned. A tunable laser presents a new signal of a defined frequency indicative of a signal to be added to the input data stream. A modulator coupled to the tunable laser for receiving the new signal and forming a modulated signal. An add filter arrangement coupled to the modulator for receiving the modulated signal and adding the modulated signal to the data stream.

Abstract translation: 光子电路包括包括多个谐振器的可调滴式滤波器装置。 滤波器布置被调谐以从波导的输入数据流中移除选定的频率。 波长传感器耦合到放大滤波器，以监测已经调谐了滤波器布置的选定频率。 可调谐激光器呈现指示要添加到输入数据流的信号的定义频率的新信号。 耦合到可调激光器的调制器，用于接收新信号并形成调制信号。 耦合到调制器的加法滤波器装置，用于接收调制信号并将调制信号加到数据流中。

公开(公告)号：WO99031735A1

公开(公告)日：1999-06-24

申请号：PCT/US1998/024702

申请日：1998-11-20

IPC: H01L33/10 ,  H01L33/14 ,  H01L33/46 ,  H01S5/183 ,  H01S5/20 ,  H01S5/30 ,  H01L29/861 ,  H01L33/00 ,  H01S3/085

CPC classification number: H01S5/18341 ,  H01L33/105 ,  H01L33/145 ,  H01L33/465 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/1833 ,  H01S5/18369 ,  H01S5/2063 ,  H01S5/3054 ,  H01S5/3086 ,  H01S2301/173

Abstract: A light emmitting device having a first mirror (58), an active layer (64), a second mirror (68), and a beryllium implantation (82) resulting in a peripheral boundary of a waveguide (86) through the first and second mirrors (58, 68), the active layer (64) and the trapping layer (62). A P-N junction is situated within the implantation and the guide. The turn on voltage is lower for the junction within the waveguide than that within the implantation, resulting in confinement of current within the guide at a voltage applied to the device that is greater than the lower junction voltage and less than the higher junction voltage. The device also has an electron trapping layer (62) between said first mirror (58) and said active layer (64), and a conduction layer (72), situated on said second mirror (68).

Abstract translation: 一种具有第一反射镜（58），有源层（64），第二反射镜（68）和铍注入（82）的发光装置，其通过第一和第二反射镜导致波导（86）的外围边界 （58,68），有源层（64）和捕获层（62）。 P-N结位于植入和引导下。 波导内的接合点的接通电压比注入内的接通电压低，从而导致电流在引导器内被施加到器件上的电压的限制，该电压大于较低的结电压并且小于较高的结电压。 所述器件还在所述第一反射镜（58）和所述有源层（64）之间具有电子捕获层（62），以及位于所述第二反射镜（68）上的导电层（72）。

公开(公告)号：WO1997001879A1

公开(公告)日：1997-01-16

申请号：PCT/US1996010610

申请日：1996-06-19

Applicant: OPTICAL CONCEPTS, INC.

Inventor： OPTICAL CONCEPTS, INC. ,  SCOTT, Jeffrey, W.

IPC: H01S03/085

CPC classification number: H01S5/18333 ,  H01S5/18311 ,  H01S5/18316 ,  H01S5/1833 ,  H01S5/18358 ,  H01S2301/166

Abstract: A vertical-cavity surface-emitting laser (VCSEL) has an active region (20), first and second mirror stacks (14, 26) forming a resonant cavity with a radial variation in index forming a transverse optical mode (32), and a thin insulating slot (27) within the cavity to constrict the current to a diameter less than the beam waist of the optical mode thereby improving device efficiency and preferentially supporting single mode operation. In one embodiment, an insulating slot is formed by etching or selectively oxidizing a thin aluminium-containing semiconductor layer in towards the center of a cylindrical mesa. The slot thickness is sufficiently thin that the large index discontinuity has little effect on the transverse optical-mode pattern. The slot may be placed near an axial standing-wave null to minimize the perturbation of the index discontinuity and allow the use of thicker slots. In a preferred embodiment, the current constriction, formed by the insulating slot, is located on the p-type side of the active region and has a diameter significantly less than the beam waist of the optical mode, thus minimizing outward diffusion of carriers and ensuring single transverse-mode operation of the laser by suppressing spatial hole burning.

Abstract translation: 垂直腔表面发射激光器（VCSEL）具有有源区域（20），形成谐振腔的第一和第二反射镜叠层（14,26）具有形成横向光学模式（32）的折射率的径向变化，并且 在空腔内的薄绝缘槽（27）将电流收缩到小于光学模式的光束腰部的直径，从而提高器件效率并优先支持单模操作。 在一个实施例中，通过蚀刻或选择性地将薄的含铝半导体层朝向圆柱形台面的中心形成绝缘槽。 狭缝厚度足够薄，使得大的折射率不连续性对横向光学模式图案几乎没有影响。 槽可以放置在轴向驻波零点附近，以最小化指数不连续性的扰动，并允许使用较厚的槽。 在优选实施例中，由绝缘槽形成的电流收缩部位于有源区域的p型侧，并且具有明显小于光学模式的光束腰部的直径，从而最小化载体的向外扩散并确保 通过抑制空穴燃烧，激光的单横模操作。