VALVE METAL COMPOSITIONS AND METHOD
    1.
    发明申请
    VALVE METAL COMPOSITIONS AND METHOD 审中-公开
    阀门金属组合物和方法

    公开(公告)号:WO98049356A1

    公开(公告)日:1998-11-05

    申请号:PCT/US1998/008170

    申请日:1998-04-23

    Abstract: Valve metal articles such as wire, sheet or powder having a second metal, preferably in a peripheral margin, prepared by coating the valve metal with a salt solution of the metal additive and heat treating in the presence of an oxygen getter to remove the oxygen from the valve metal and the anion of the metal salt to form the metal additive. For tantalum wire a preferred second metal is nickel. A preferred oxygen getter is magnesium. Nickel-containing tantalum wire is useful for enhance bonding to sintered pressed tantalum powder pellets in the production of electrolytic capacitors.

    Abstract translation: 通过用金属添加剂的盐溶液涂覆阀金属并在氧吸气剂的存在下进行热处理来制备具有第二金属,优选在周边边缘的金属制品,例如线,片或粉末,以从 阀门金属和金属盐的阴离子形成金属添加剂。 对于钽线,优选的第二金属是镍。 优选的氧气吸气剂是镁。 含镍钽丝可用于在生产电解电容器时增强与烧结的压制钽粉末颗粒的结合。

    THERMOCHEMICAL SYNTHESIS OF METALLIC PIGMENTS

    公开(公告)号:WO2019095016A1

    公开(公告)日:2019-05-23

    申请号:PCT/AU2018/051227

    申请日:2018-11-16

    Abstract: The present invention relates to a method and an apparatus for coating large area solid substrates such as flakes, powder, beads, and fibres with metal-based coatings by heating the substrate with a powder mixture including reducible metal oxides and a reducing agent. The method is particularly suited for production of substrates coated with metals, alloys and compounds based on Ti, Al, Zn, Sn, In, Sb, Ag, Co, V, Ni, Cr, Mn, Fe, Cu, Pt, Pd, Ta, Zr, Nb, Rh, Ru, Mo, Os , Re and W .

    금속부품의 부식방지를 위한 친환경 아연 플레이크 표면처리용액 및 그 표면처리방법
    4.
    发明申请
    금속부품의 부식방지를 위한 친환경 아연 플레이크 표면처리용액 및 그 표면처리방법 审中-公开
    用于金属部件防腐蚀的环保型锌片表面处理液及其表面处理方法

    公开(公告)号:WO2017164438A1

    公开(公告)日:2017-09-28

    申请号:PCT/KR2016/002907

    申请日:2016-03-23

    Inventor: 이주형

    CPC classification number: C23C20/02 C23C22/32 C23F11/00 C23F11/18

    Abstract: 본 발명은 금속부품의 부식방지를 위한 친환경 아연 플레이크 표면처리용액 및 그 표면처리용액을 이용한 표면처리방법에 대한 것이다. 보다 상세하게는 아연 플레이크 1 ~ 11 중량%, 알루미늄 플레이크 0 ~ 12 중량%, 아연-알루미늄 플레이크 25 ~ 50 중량%, 트리에톡실란 5 ~ 13 중량%, 테트라에톡시실란 0 ~ 10중량%, 스테아르산 0 ~ 6중량%, 비닐트리에톡시실란 2 ~ 10 중량%, 메틸트리에톡시실란 1.5 ~ 11 중량%, 테트라뷰틸티타네이트 1 ~ 4 중량%, 디프로필렌글리콜 15 ~ 37 중량 % 및 에탄올 0 ~ 20 중량%를 포함하는 것을 특징으로 하는 금속부품의 부식방지를 위한 친환경 아연 플레이크 표면처리용액에 관한 것이다.

    Abstract translation:

    本发明涉及一种使用该环境友好的锌薄片的表面处理溶液和用于防止金属部件的腐蚀的表面处理溶液的表面处理方法。 更具体地,锌薄片,1-11%(重量)的铝薄片0〜12%(重量),锌 - 铝薄片,按重量计25-50%,轻拂硅烷(重量)的树,硅烷和0至10%的5-13%(重量)四的, 重量的硬脂酸0-6%(重量)的乙烯基三乙氧基硅烷的硅烷2-10%,(重量)甲基硅烷,四钛酸丁酯,1至4重量%的1.5〜11%,一缩二丙二醇(重量)的乙醇15-37% 基于锌片表面处理溶液的总重量,0至20重量%。

    ANTI-CORROSION NANOPARTICLE COMPOSITIONS
    5.
    发明申请
    ANTI-CORROSION NANOPARTICLE COMPOSITIONS 审中-公开
    抗腐蚀纳米材料组合物

    公开(公告)号:WO2016168346A1

    公开(公告)日:2016-10-20

    申请号:PCT/US2016/027351

    申请日:2016-04-13

    Applicant: ATTOSTAT, INC.

    Abstract: Anti-corrosion nanoparticle compositions include a carrier and a plurality of nonionic metal nanoparticles. The metal nanoparticles can be spherical-shaped and/or coral-shaped metal nanoparticles. The nanoparticles are selected so as to locate at the grain boundaries of a metal or metal alloy when the anti-corrosion composition is applied to the metal or alloy, thereby reducing or preventing intergranular corrosion of the metal or alloy.

    Abstract translation: 防腐蚀纳米颗粒组合物包括载体和多种非离子金属纳米颗粒。 金属纳米颗粒可以是球形和/或珊瑚形金属纳米颗粒。 当将防腐蚀组合物施加到金属或合金上时,选择纳米颗粒以定位在金属或金属合金的晶界处,从而减少或防止金属或合金的晶间腐蚀。

    A METHOD AND APPARATUS FOR CHEMICAL VAPOUR DEPOSITION

    公开(公告)号:WO2020159418A1

    公开(公告)日:2020-08-06

    申请号:PCT/SE2020/050036

    申请日:2020-01-15

    Abstract: The present disclosure relates to a method for chemical vapour deposition on a substrate, the method comprising a precursor step and a reactant step, wherein the precursor step comprises chemisorbing a layer of precursor molecules on the substrate (170), and wherein the reactant step comprises adding to at least part of the substrate (170) surface species able to reduce the precursor molecule, whereby at least a part of the reduced precursor molecule is deposited on the substrate (170) surface, characterized by applying by means of a voltage source (130) a positive bias to at least part of the substrate (170) surface during at least part of the reactant step, wherein the step of adding the reducing species comprises providing by means of an electron source (150) electrons as free particles, whereby during the reactant step a closed electrical circuit is formed as the free electrons are transmitted to the substrate (170) surface.

    Y2O3 FILM AND PROCESS FOR PRODUCING THE SAME
    8.
    发明申请
    Y2O3 FILM AND PROCESS FOR PRODUCING THE SAME 审中-公开
    Y2O3薄膜及其制造方法

    公开(公告)号:WO2007013640A1

    公开(公告)日:2007-02-01

    申请号:PCT/JP2006/315082

    申请日:2006-07-24

    Abstract: There is provided by the invention a member having high resistance to plasma corrosion required for a plasma etching chamber of a semiconductor manufacturing apparatus or a plasma treatment apparatus for a liquid crystal device or the like. An Y 2 O 3 film comprising an aggregate of Y 2 O 3 particles having a volume-average particle diameter of 10 nm to 300 nm is disclosed. An Y 2 O 3 film obtained by drying an Y 2 O 3 slurry having a volume-average particle diameter, in a dispersed state, of 10 nm to 300 nm and heat-treating the dried product is also disclosed. A dispersion medium of the Y 2 O 3 slurry is a polyhydric alcohol derivative. The Y 2 O 3 slurry contains b-diketone as a dispersant. The Y 2 O 3 slurry contains a b-diketone metal complex as a binder. The Y 2 O 3 slurry is a mixed slurry of two or more kinds of slurries having dispersed particle diameters of different volume-average particle diameters. Also disclosed is a process for producing an Y 2 O 3 film, comprising applying an Y 2 O 3 slurry having a volume-average particle diameter, in a dispersed state, of 10 nm to 300 nm and having an Y 2 O 3 concentration of 0.1% by mass to 40% by mass onto a substrate so that the film thickness based on one film-forming operation should become 10 nm to 5 mm and carrying out heat treatment at a heat treatment temperature of 100°C to 300°C for a heat treatment time of 10 minutes to 5 hours after film formation.

    Abstract translation: 本发明提供了一种对半导体制造装置的等离子体蚀刻室或液晶装置等离子体处理装置等所要求的等离子体腐蚀性高的构件。 包含具有体积平均粒径的Y 2 O 3 N 3颗粒的聚集体的Y 2 O 3 O 3膜 公开了10nm至300nm。 通过干燥具有体积平均粒径的Y 2 O 3 N 3浆料获得的Y 2 O 3 N 3膜 ,分散状态为10nm〜300nm,并对干燥产物进行热处理。 Y 2 O 3 N 3浆液的分散介质是多元醇衍生物。 Y 2 O 3浆料含有作为分散剂的b-二酮。 Y 2 O 3浆料含有作为粘合剂的b-二酮金属络合物。 Y 2 N 3 O 3浆料是具有不同体积平均粒径的分散粒径的两种或更多种浆料的混合浆料。 还公开了一种制备Y 2 O 3 O 3膜的方法,其包括将Y 2 O 3 O 3浆料 具有分散状态的体积平均粒径为10nm〜300nm,Y 2 O 3 O 3浓度为0.1质量%〜40体积% 使得基于一次成膜操作的膜厚度应为10nm至5mm,并在100℃至300℃的热处理温度下进行热处理10分钟的热处理时间至 成膜后5小时。

Patent Agency Ranking