Abstract:
Valve metal articles such as wire, sheet or powder having a second metal, preferably in a peripheral margin, prepared by coating the valve metal with a salt solution of the metal additive and heat treating in the presence of an oxygen getter to remove the oxygen from the valve metal and the anion of the metal salt to form the metal additive. For tantalum wire a preferred second metal is nickel. A preferred oxygen getter is magnesium. Nickel-containing tantalum wire is useful for enhance bonding to sintered pressed tantalum powder pellets in the production of electrolytic capacitors.
Abstract:
The present invention relates to a method and an apparatus for coating large area solid substrates such as flakes, powder, beads, and fibres with metal-based coatings by heating the substrate with a powder mixture including reducible metal oxides and a reducing agent. The method is particularly suited for production of substrates coated with metals, alloys and compounds based on Ti, Al, Zn, Sn, In, Sb, Ag, Co, V, Ni, Cr, Mn, Fe, Cu, Pt, Pd, Ta, Zr, Nb, Rh, Ru, Mo, Os , Re and W .
Abstract:
Vessels selected from crucibles, pans, open cups and saggars essentially comprising of two components, from which (A) one component being a ceramic matrix composite, and (B) the second component being from metal or alloy, and wherein component (A) is the inner one.
Abstract:
Anti-corrosion nanoparticle compositions include a carrier and a plurality of nonionic metal nanoparticles. The metal nanoparticles can be spherical-shaped and/or coral-shaped metal nanoparticles. The nanoparticles are selected so as to locate at the grain boundaries of a metal or metal alloy when the anti-corrosion composition is applied to the metal or alloy, thereby reducing or preventing intergranular corrosion of the metal or alloy.
Abstract:
The present disclosure relates to a method for chemical vapour deposition on a substrate, the method comprising a precursor step and a reactant step, wherein the precursor step comprises chemisorbing a layer of precursor molecules on the substrate (170), and wherein the reactant step comprises adding to at least part of the substrate (170) surface species able to reduce the precursor molecule, whereby at least a part of the reduced precursor molecule is deposited on the substrate (170) surface, characterized by applying by means of a voltage source (130) a positive bias to at least part of the substrate (170) surface during at least part of the reactant step, wherein the step of adding the reducing species comprises providing by means of an electron source (150) electrons as free particles, whereby during the reactant step a closed electrical circuit is formed as the free electrons are transmitted to the substrate (170) surface.
Abstract:
There is provided by the invention a member having high resistance to plasma corrosion required for a plasma etching chamber of a semiconductor manufacturing apparatus or a plasma treatment apparatus for a liquid crystal device or the like. An Y 2 O 3 film comprising an aggregate of Y 2 O 3 particles having a volume-average particle diameter of 10 nm to 300 nm is disclosed. An Y 2 O 3 film obtained by drying an Y 2 O 3 slurry having a volume-average particle diameter, in a dispersed state, of 10 nm to 300 nm and heat-treating the dried product is also disclosed. A dispersion medium of the Y 2 O 3 slurry is a polyhydric alcohol derivative. The Y 2 O 3 slurry contains b-diketone as a dispersant. The Y 2 O 3 slurry contains a b-diketone metal complex as a binder. The Y 2 O 3 slurry is a mixed slurry of two or more kinds of slurries having dispersed particle diameters of different volume-average particle diameters. Also disclosed is a process for producing an Y 2 O 3 film, comprising applying an Y 2 O 3 slurry having a volume-average particle diameter, in a dispersed state, of 10 nm to 300 nm and having an Y 2 O 3 concentration of 0.1% by mass to 40% by mass onto a substrate so that the film thickness based on one film-forming operation should become 10 nm to 5 mm and carrying out heat treatment at a heat treatment temperature of 100°C to 300°C for a heat treatment time of 10 minutes to 5 hours after film formation.
Abstract translation:本发明提供了一种对半导体制造装置的等离子体蚀刻室或液晶装置等离子体处理装置等所要求的等离子体腐蚀性高的构件。 包含具有体积平均粒径的Y 2 O 3 N 3颗粒的聚集体的Y 2 O 3 O 3膜 公开了10nm至300nm。 通过干燥具有体积平均粒径的Y 2 O 3 N 3浆料获得的Y 2 O 3 N 3膜 ,分散状态为10nm〜300nm,并对干燥产物进行热处理。 Y 2 O 3 N 3浆液的分散介质是多元醇衍生物。 Y 2 O 3浆料含有作为分散剂的b-二酮。 Y 2 O 3浆料含有作为粘合剂的b-二酮金属络合物。 Y 2 N 3 O 3浆料是具有不同体积平均粒径的分散粒径的两种或更多种浆料的混合浆料。 还公开了一种制备Y 2 O 3 O 3膜的方法,其包括将Y 2 O 3 O 3浆料 具有分散状态的体积平均粒径为10nm〜300nm,Y 2 O 3 O 3浓度为0.1质量%〜40体积% 使得基于一次成膜操作的膜厚度应为10nm至5mm,并在100℃至300℃的热处理温度下进行热处理10分钟的热处理时间至 成膜后5小时。
Abstract:
The invention relates to components consisting of aluminium or aluminium alloys. A coating consisting of an aluminium-silicon alloy can be deposited on said components by applying alkali-metal hexafluorosilicate and by heating the same. The alloy layer is effectively protected against re-oxidation by a non-corrosive potassium fluoroaluminate layer which forms simultaneously.