Abstract:
In an optical carrier injection method, a pulsed optical beam having pulse duration of 900 fs or lower is applied on a backside of a substrate of an integrated circuit (IC) wafer or chip, and is focused at a focal point in an active layer on a frontside of the substrate. Photons of the optical beam are absorbed at the focal point by nonlinear optical interaction(s) to inject carriers. The pulsed optical beam may be applied using a fiber laser in which the fiber is doped with Yb and/or Er. An output signal may be measured, comprising an electrical signal or a light output signal produced by the IC wafer or chip in response to the injected carriers. By repeating the applying, focusing, and measuring over a grid of focal points in the active layer, an image of the IC wafer or chip may be generated.
Abstract:
Kontaktierungsmodul und Verfahren zur Montage eines Kontaktierungsmoduls, mit einem Optikmodul (1), enthaltend einen Optikblock (1.1) aus Glas, der in einer optischen Schnittstellenebene (Eopt) eine Anordnung von optischen Schnittstellen (Sopt) aufweist und einem Elektronikmodul (2), der in einer elektrischen Schnittstellenebene (Eele) eine Anordnung von elektrischen Schnittstellen(Sele) aufweist, wobei das Optikmodul (1) und das Elektronikmodul (2) so zueinander angeordnet sind, dass die Anordnung von optischen Schnittstellen(Sopt) und die Anordnung von elektrischen Schnittstellen (Sele) eine definierte Justierlage zueinander aufweisen. Das Optikmodul (1) enthält eine Montageplatte (1.2) die über eine wiederholt lösbare, reproduzierbare Verbindung mit dem Elektronikmodul (2) in Verbindung steht.
Abstract:
A method includes measuring a plurality of latchup release parameter values of a monitored circuit to generate data. Each latchup release parameter value of the plurality of latchup release parameter values is associated with the monitored circuit exiting a latchup state. The method also include predicting, based on the data and based on one or more characteristic values of a protection circuit coupled to the monitored circuit, whether the protection circuit is likely to prevent an occurrence of a latent failure within the monitored circuit in particular latchup conditions.
Abstract:
Die vorliegende Erfindung betrifft eine Vorrichtung zur S-Parameter Charakterisierung von elektrischen Bauelementen, bei welchen eine Strahlungsquelle (001) ein Emitter (101) nachgeordnet ist, welcher an ein elektronisches Bauteil (121) angekoppelt und mit einem Detektor (111) verbunden ist sowie ein Verfahren zur Charakterisierung der S-Parameter des elektronischen Bauteils sowie die Verwendung der Vorrichtung in dem genannten Verfahren.
Abstract:
The invention relates to a measuring apparatus. The apparatus includes a housing assembly that defines an enclosure, a control system mounted in the housing assembly, and an operator interface mounted on the housing assembly and connected to the control system to allow an operator to control the measuring apparatus. The apparatus also includes a measuring table assembly mounted in the housing assembly and configured to receive a nest assembly supporting an integrated circuit carrier carrying a number of integrated circuits, and a camera assembly mounted in the housing assembly and configured to generate image data representing the integrated circuit carrier and the integrated circuits. The camera assembly is connected to the control system which is configured to carry out a positional analysis on the integrated circuit carrier and the integrated circuits to determine at least one of positions of the integrated circuits on the carrier and relative positions of consecutive integrated circuits.
Abstract:
To analyse an electronic component in depth, provision is made to submit said component to focused laser radiation. It is shown that by modifying the altitude of the focus in the component, some internal parts of said component can be characterised more easily.
Abstract:
Dispositif (10) d' analyse d'un circuit (14) comportant : au moins un moyen (22) d'observation de Ia lumiere emise par au moins une zone d' observation localisee du circuit du fait de Ia circulation du courant electrigue dans cette zone ; des moyens (26) d' excitation du circuit. Les moyens d' excitation du circuit comportent une source laser (26) et des moyens (30) d' application du f aisceau laser engendre par Ia source sur une zone d' excitation du circuit simultanement a 1' observation du circuit par les moyens d'observation (22) . Le dispositif comporte des moyens (Ml, M2) de protection des moyens d'observation (22) contre les faisceaux laser incidents et reflechis.
Abstract:
A system and method for calibration of a commercial semiconductor test system (tester). The system receives a synchronization signal from the tester and detects light emission from a device under test (DUT). The system then compares the 5 timing and characteristics of the light emission to the synchronization signal to obtain a delay timing and signal change caused by intermediate elements of the tester. The delay timing and signal change are used to calibrate the various channels of the tester. Also described are various designs for DUT's to obtained enhanced accuracy of the delay timing. Further, a system and method are described for reconstruction of a test to signal and study of the effects of intermediate elements of the tester on the shape of the test signal.
Abstract:
Methods, apparatus and data structures useful in correcting PICA image data are described. An exemplary method comprises acquiring optical image data of a target having identifiable optical-image features, acquiring PICA image data of the target having identifiable PICA-image features corresponding to the optical-image features, matching PICA-image features with corresponding optical-image features, and calculating from matched PICA-image features and optical-image features a set of coefficients defining relationships between observed positions of PICA-image features and optical-image features. Corrections are applied to the observed positions of detected photons based on the coefficients. The coefficients may provide a local correction using a bilinear relationship giving the transformation of a rectangle formed by four features of the PICA-image data to fit a corresponding rectangle in the optical-image data. Alternatively, the coefficients may provide a global mapping function defining transformation of any point of the PICA-image data to fit a corresponding point in the optical-image data.
Abstract:
Systems and methods for contact image sensor CIS based inspection of specimens are provided. A system configured to inspect a specimen may include a contact image sensor. The contact image sensor may include a light source configured to direct light toward a surface of the specimen and a linear sensor array configured to detect light returned from the surface. The system may further include a processor configured to determine a presence of defects on the surface using the detected light. A method for inspecting the specimen may include directing light from a light source toward a surface of the specimen and detecting light returned from the surface using a linear sensor array. The light source and the linear sensor array may be arranged in a contact image sensor. The method may further include determining a presence of defects on the surface from the detected light.