Abstract:
A method of evaluating a region of a sample that includes a first sub-region and a second sub-region, adjacent to the first sub-region, the region comprising a plurality of sets of vertically-stacked double-layers extending through both the first and second sub-regions with a geometry or orientation of the vertically-stacked double layers in the first sub-region being different than a geometry or orientation of the vertically-stacked double layers in the second region resulting in the first sub-region having a first milling rate and the second sub-region having a second milling rate different than the first milling rate, the method including: milling the region of a sample by scanning a focused ion beam over the region a plurality of iterations in which, for each iteration, the focused ion beam is scanned over the first sub-region and the second sub-region generating secondary electrons and secondary ions from each of the first and second sub-regions; detecting, during the milling, at least one of the generated secondary electrons or the secondary ions; generating, in real-time, an endpoint detection signal from the at least one of detected secondary electrons or secondary ions, the endpoint detection signal including a fast oscillating signal having a first frequency and a slow oscillating signal having a second frequency, slower than the first frequency; analyzing the fast and slow oscillating signals to determine original first and second frequencies of the fast and slow oscillating signals; and estimating, in real-time, a depth of each of the first and second sub-regions based on the determined first and second frequencies.
Abstract:
A method of evaluating a region of a sample that includes two or more sub-regions adjacent to each other that have different milling rates. The method can include: scanning a focused ion beam over the region during a single scan frame such that the ion beam is scanned over a first sub-region of the region having a first milling rate at a first scan rate and then scanned over a second sub-region of the region having a second milling rate at a second scan rate, where the second milling rate is faster than the first milling rate and second scan rate is faster than the first scan rate; and repeating the scanning process a plurality of times to etch the region to a desired depth
Abstract:
Insulated conducting devices and related methods are disclosed. An insulated conducting device for a voltage structure comprises: a conductor connected to a voltage; and multiple insulation segments enclosing the conductor, the multiple insulation segments interfacing with one another.
Abstract:
Diese Anmeldung betrifft ein Verfahren zur Ermittlung von Strahlparametern eines Ladungsträgerstrahls, eine Messeinrichtung sowie eine Ladungsträgerstrahlvorrichtung. Der Ladungsträgerstrahl (4) einer Ladungsträgerstrahlvorrichtung (1) wird mittels einer Strahlablenkeinheit (3) über eine in einer Blendenvorrichtung (7) vorgesehene Schlitzblendenanordnung mit einer oder mehreren Schlitzblenden (8) geführt. Von den durch die Schlitzblendenanordnung hindurch getretenen Strahlanteilen werden Messebenen-Koordinaten erfasst. Anhand der Messebenen-Koordinaten wird die Blendenvorrichtung automatisch so verfahren, dass eine in der Blendenvorrichtung angeordnete Messblende (9) über einen vorgegebenen Messreferenzpunkt verfahren wird. Die Strahlparametermessung erfolgt mittels der Messblende. Bei einer für das Verfahren geeigneten Messeinrichtung (5) weist die Schlitzblendenanordnung mindestens zwei zueinander nicht parallele Schlitzblendenabschnitte (12, 13, 15, 16) auf, die zu einer einzelnen durchgehenden Schlitzblende gehören können.
Abstract:
A system and method for the precise and uniform material removal or delayering of a large area of a sample is provided. The size of the milled area is controllable, ranging from sub-millimeter to multi-millimeter scale and the depth resolution is controllable on the nanometer scale. A controlled singularly charged ion beam is scanned across the sample surface in such a manner to normalize the ion density distribution from the sample center toward the periphery to realize uniform delayering.
Abstract:
The invention relates to a particle beam processing device having a particle beam generator (7), and a vacuum chamber (101) comprising a chamber volume (V) that can be evacuated, wherein the vacuum chamber (101) has a chamber wall (1) with a first opening which is formed in the chamber wall (1). Said device also has a first cover (2) which is designed to cover the first opening (O1) and be rotated about a first rotational axis extending through the first opening, and a second opening which is formed in the first cover (2). Said device also has a second cover (3) which is designed to cover the second opening, be rotated about a second rotational axis extending through the second opening, and move the particle beam generator (7). The particle beam generator (7) can be displaced in a first direction (Z) within the chamber volume (V) that can be evacuated.
Abstract:
A high voltage insulator for preventing instability in an ion implanter due to triple junction breakdown is described. In one embodiment, there is an apparatus for preventing triple junction instability in an ion implanter. In this embodiment, there is a first metal electrode and a second metal electrode. An insulator is disposed between the first metal electrode and the second metal electrode. The insulator has at least one surface between the first metal electrode and the second metal electrode that is exposed to a vacuum that transports an ion beam generated by the ion implanter. A first conductive layer is located between the first metal electrode and the insulator. The first conductive layer prevents triple junction breakdown from occurring at an interface of the first electrode, insulator and vacuum. A second conductive layer is located between the second metal electrode and the insulator opposite the first conductive layer. The second conductive layer prevents triple junction breakdown from occurring at an interface of the second electrode, insulator and vacuum.
Abstract:
The present invention provides a magnetic recording medium having superior startup operation and durability as well as satisfactory surface lubricity. The present invention relates to a method of manufacturing a magnetic recording medium in which at least a magnetic layer, a protective film layer and a lubricant layer are sequentially laminated on a non-magnetic substrate, wherein the lubricant layer is surface treated using a gas activated by plasma generated at a pressure in the vicinity of atmospheric pressure. The present invention also relates to a magnetic recording medium produced according to the aforementioned manufacturing method.
Abstract:
The present invention provides a magnetic recording medium having superior startup operation and durability as well as satisfactory surface lubricity. The present invention relates to a method of manufacturing a magnetic recording medium in which at least a magnetic layer, a protective film layer and a lubricant layer are sequentially laminated on a non-magnetic substrate, wherein the lubricant layer is surface treated using a gas activated by plasma generated at a pressure in the vicinity of atmospheric pressure. The present invention also relates to a magnetic recording medium produced according to the aforementioned manufacturing method.