公开(公告)号：WO2022245422A2

公开(公告)日：2022-11-24

申请号：PCT/US2022/020907

申请日：2022-03-18

Applicant: WOLFSPEED, INC.

Inventor： GUO, Jia ,  SRIRAM, Saptharishi ,  SHEPPARD, Scott

IPC: H01L29/778 ,  H01L29/20 ,  H01L21/28587 ,  H01L21/7605 ,  H01L21/765 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/36 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/7787

Abstract: A transistor device includes a channel layer, a barrier layer on the channel layer, and source and drain contacts on the barrier layer, and a gate contact on the barrier layer between the source and drain contacts. The channel layer includes a sub-layer having an increased doping concentration level relative to a remaining portion of the channel layer. The presence of the sub-layer may reduce drain lag without substantially increasing gate lag. The sub-layer may be a buried sub-layer, and the device may further include a second sub-layer between the buried sub-layer and the barrier layer.

公开(公告)号：WO2022000362A1

公开(公告)日：2022-01-06

申请号：PCT/CN2020/099696

申请日：2020-07-01

Applicant: INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.

Inventor： CHIU, Han-Chin

IPC: H01L29/06 ,  H01L29/778 ,  H01L29/04 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/401 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7786 ,  H01L29/7787

Abstract: A semiconductor device (100) and a fabrication method thereof. The semiconductor device (100) includes a substrate (10), a first nitride semiconductor layer (18) above the substrate (10), a semiconductor stack disposed on and in contact with the first nitride semiconductor layer (18), and a first electrode in contact with the semiconductor stack. Wherein the semiconductor stack comprises a first layer (20a1) and a second layer (20a2), and a lattice constant of the first layer (20a1) along an a-axis is less than the second layer (20a2).

公开(公告)号：WO2022006770A1

公开(公告)日：2022-01-13

申请号：PCT/CN2020/100800

申请日：2020-07-08

Applicant: INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.

Inventor： ZHANG, Anbang

IPC: H01L29/778 ,  H01L23/29 ,  H01L21/56 ,  H01L23/291 ,  H01L23/296 ,  H01L23/3171 ,  H01L23/3192 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/42376 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/7787

Abstract: An electronic device which comprises: a substrate (10); a first nitride semiconductor layer (211) on the substrate (10); a second nitride semiconductor layer (212) on the first nitride semiconductor layer (211), the second nitride semiconductor layer (212) has a band gap greater than a band gap of the first nitride semiconductor layer (211); a group III-V dielectric layer is disposed on the second nitride semiconductor layer (212); a gate electrode (24) is disposed on the second nitride semiconductor layer (212); and a first passivation layer (30) is disposed on the group III-V dielectric layer, wherein the group III-V dielectric layer is separated from the gate electrode (24) by the first passivation layer (30).

公开(公告)号：WO2021243654A1

公开(公告)日：2021-12-09

申请号：PCT/CN2020/094414

申请日：2020-06-04

Applicant: INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.

Inventor： YAO, Weigang ,  ZHANG, Anbang

IPC: H01L29/778 ,  H01L27/06 ,  H01L21/76898 ,  H01L21/8252 ,  H01L23/481 ,  H01L23/52 ,  H01L27/0629 ,  H01L27/0694 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/861

Abstract: Some embodiments of the disclosure provide a semiconductor device. The semiconductor device includes: a substrate having a first side and a second side opposite the first side; a first nitride semiconductor layer disposed on the first side of the substrate; a second nitride semiconductor layer on the first nitride semiconductor layer and having a band gap greater than a band gap of the first nitride semiconductor layer; a first electrode disposed on the second nitride semiconductor layer; a second electrode disposed on the second nitride semiconductor layer; a first semiconductor structure formed adjacent to the second side of the substrate; and a second semiconductor structure formed adjacent to the second side of the substrate; and wherein the first semiconductor structure and the second semiconductor structure are adjacent to each othe.

公开(公告)号：WO2021192727A1

公开(公告)日：2021-09-30

申请号：PCT/JP2021/005580

申请日：2021-02-09

Applicant: MITSUBISHI ELECTRIC CORPORATION

Inventor： TEO, Koon Hoo ,  CHOWDHURY, Nadim

IPC: H01L29/778 ,  H01L21/337 ,  H01L29/10 ,  H01L21/265 ,  H01L29/20 ,  H01L21/02304 ,  H01L21/0415 ,  H01L21/26586 ,  H01L29/0615 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/7788

Abstract: Devices and methods of a field effect transistor device that include a source, a gate and a drain. The transistor includes a semiconductor region position is under the source, the gate and the drain. Such that the semiconductor region can include a gallium nitride (GaN) layer and an III Nitride (III-N) layer. Wherein the GaN layer includes a band gap, and the III-N layer includes a band gap. Such that the III-N layer band gap is higher than the GaN layer band gap. A sub-region of the semiconductor region is located underneath the gate and is doped with Mg ions at selective locations in the sub-region.

公开(公告)号：WO2022000403A1

公开(公告)日：2022-01-06

申请号：PCT/CN2020/099871

申请日：2020-07-02

Applicant: INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.

Inventor： CHOU, Yi-Lun

IPC: H01L29/778 ,  H01L21/335 ,  H01L21/22 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/402 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/7787

Abstract: A semiconductor device structure includes a substrate, a channel layer, a barrier layer and a doped group III-V layer. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The doped group III-V layer is disposed on the barrier layer. The doped group III-V layer includes a first portion and a second portion. The first portion has a first concentration of a first element. The second portion is adjacent to the first portion and has a second concentration of the first element. The gate structure is disposed on the first portion of the doped group III-V layer. The first concentration of the first element is different from the second concentration of the first element.

公开(公告)号：WO2021197703A1

公开(公告)日：2021-10-07

申请号：PCT/EP2021/053712

申请日：2021-02-16

Applicant: OTTO-VON-GUERICKE-UNIVERSITÄT MAGDEBURG

Inventor： DADGAR, Armin ,  CHALLA, Seshagiri Rao

IPC: H01L29/20 ,  H01L29/36 ,  H01L29/417 ,  H01L29/66 ,  H01L29/778 ,  H01L29/10 ,  H01L29/1083 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/7783 ,  H01L29/7787

Abstract: Die Erfindung betrifft einen Feldeffekttransistor mit unteren (102) und oberen (103) Halbleiterschichten, wobei unterhalb der oberen Halbleiterschicht (103) mit Abstand zur oberen Halbleiterschicht eine Ladungsträgerreservoirschicht (110, 112) ausgebildet ist, welche im Vergleich zur Umgebung eine erhöhte Ladungsträgerdichte aufweist und dafür sorgt, dass strahlungsbedingte Schäden nur einen geringen Einfluss auf die elektrischen Charakteristika des Feldeffekttransistors haben.

公开(公告)号：WO2021144382A1

公开(公告)日：2021-07-22

申请号：PCT/EP2021/050731

申请日：2021-01-14

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： SAVELLI, Guillaume ,  BRYAN, Charlotte ,  ESCOFFIER, René ,  PLISSONNIER, Marc

IPC: G01K7/02 ,  H01L23/34 ,  H01L35/32 ,  H01L29/205 ,  H01L29/778 ,  H01L21/8252 ,  H01L27/06 ,  H01L29/20 ,  G01K7/028 ,  H01L27/0605 ,  H01L27/0617 ,  H01L29/2003 ,  H01L29/7787

Abstract: Composant électronique de puissance intégrant un capteur thermoélectrique Composant électronique (365) comportant un support (10), un capteur thermoélectrique (350) et un transistor de puissance (355) disposés sur le support, le transistor de puissance comportant une couche de base (20) contenant un matériau de transistor choisi parmi le nitrure de gallium, le nitrure d'aluminium-gallium, l'arséniure de gallium, le gallium-indium, le nitrure de gallium-indium, le nitrure d'aluminium, le nitrure d'aluminium-indium et leurs mélanges, le composant électronique étant configuré pour que le capteur thermoélectrique génère un courant électrique sous l'effet d'un échauffement du transistor de puissance.

公开(公告)号：WO2023002466A2

公开(公告)日：2023-01-26

申请号：PCT/IB2022/058992

申请日：2022-09-22

Applicant: IQE PLC

Inventor： KAESS, Felix ,  KAO, Chen-Kai ,  LABOUTIN, Oleg

IPC: H01L21/20 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/0254 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7786 ,  H01L29/7787

Abstract: A high electron mobility transistor 22 comprising a nucleation layer 14 having a first lattice constant, a back-barrier layer 24 having a second lattice constant and a stress management layer 26 having a third lattice constant which is larger than both first and second lattice constants. The stress management layer 26 compensates some or all of the stress due to the lattice mismatch between the nucleation layer 14 and back barrier layer 24 so that the resulting structure experiences less bow and warp.

公开(公告)号：WO2021243653A1

公开(公告)日：2021-12-09

申请号：PCT/CN2020/094413

申请日：2020-06-04

Applicant: 英诺赛科（珠海）科技有限公司

Inventor： 黄敬源 ,  李启珍

IPC: H01L29/778 ,  H01L29/0615 ,  H01L29/0684 ,  H01L29/66462 ,  H01L29/7787

Abstract: 半导体装置包括半导体层（11）、设置于所述半导体层（11）上的第一经掺杂氮化物半导体层、设置于所述第一经掺杂氮化物半导体层上的第二经掺杂氮化物半导体层；位于所述半导体层（11）及所述第一经掺杂氮化物半导体层之间的未经掺杂氮化物半导体层（12），所述未经掺杂氮化物半导体层（12）具有与所述半导体层（11）接触之第一表面及与所述第一经掺杂氮化物半导体层接触之第二表面。