The invention provides an inner structure of a plasma processing apparatus and the plasma processing apparatus for the use in a processing chamber of a plasma processing apparatus in which a plasma process is performed on a target substrate even in the high temperature situation. The substrate (100) is formed with a circular hole (101); the circular hole (101) is arranged with a columnar sleeve (120) which comprises insulated ceramics and other material; the sleeve (120) is arranged in the way of the lower side distance of the upper end part of the circular hole (101) of the top (121), which enables the sleeve (120) not contact to the spraying-plated film (110). The side wall potion of the circular hole (101) at the more upper potion is formed with an insulator layer (130). The spraying-plated film (110), the sleeve (120) and the insulator layer (130) form the upper surface (a first surface) of the substrate (100) and the insulated surface of the inner side surface (a second surface).