Invention Grant
- Patent Title: In-situ metrology method for thickness measurement during PECVD processes
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Application No.: US15184276Application Date: 2016-06-16
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Publication No.: US10281261B2Publication Date: 2019-05-07
- Inventor: Khokan C. Paul , Edward Budiarto , Todd Egan , Mehdi Vaez-Iravani , Jeongmin Lee , Dale R. Du Bois , Terrance Y. Lee
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan LLP
- Main IPC: G01B11/06
- IPC: G01B11/06 ; H01L21/66 ; G01B7/06 ; C23C16/52 ; C23C16/509 ; H01J37/32 ; H01L21/67

Abstract:
Embodiments of the present disclosure relate to apparatus and methods for forming films having uniformity of thickness on substrates. Embodiments of the present disclosure may be used to measure thickness or other properties of films being deposited on a substrate without knowing beforehand the surface properties of the substrate. Embodiments of the present disclosure may be used to measure thickness or other properties of a plurality of layers being formed. For example, embodiments of the present disclosure may be used in measuring thickness of vertical memory stacks.
Public/Granted literature
- US20160370173A1 IN-SITU METROLOGY METHOD FOR THICKNESS MEASUREMENT DURING PECVD PROCESSES Public/Granted day:2016-12-22
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