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公开(公告)号：US10527407B2
公开(公告)日：2020-01-07
申请号：US16356317
申请日：2019-03-18
Applicant: Applied Materials, Inc.
Inventor： Khokan C. Paul , Edward Budiarto , Todd Egan , Mehdi Vaez-Iravani , Jeongmin Lee , Dale R. Du Bois , Terrance Y. Lee
Abstract: Embodiments of the present disclosure relate to apparatus and methods for forming films having uniformity of thickness on substrates. Embodiments of the present disclosure may be used to measure thickness or other properties of films being deposited on a substrate without knowing beforehand the surface properties of the substrate. Embodiments of the present disclosure may be used to measure thickness or other properties of a plurality of layers being formed. For example, embodiments of the present disclosure may be used in measuring thickness of vertical memory stacks.
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公开(公告)号：US09816187B2
公开(公告)日：2017-11-14
申请号：US15278455
申请日：2016-09-28
Applicant: Applied Materials, Inc.
Inventor： Nagarajan Rajagopalan , Xinhai Han , Michael Wenyoung Tsiang , Masaki Ogata , Zhijun Jiang , Juan Carlos Rocha-Alvarez , Thomas Nowak , Jianhua Zhou , Ramprakash Sankarakrishnan , Amit Kumar Bansal , Jeongmin Lee , Todd Egan , Edward Budiarto , Dmitriy Panasyuk , Terrance Y. Lee , Jian J. Chen , Mohamad A. Ayoub , Heung Lak Park , Patrick Reilly , Shahid Shaikh , Bok Hoen Kim , Sergey Starik , Ganesh Balasubramanian
IPC: G01N21/00 , C23C16/52 , G01B11/06 , H01L21/00 , H01L21/687 , H01L21/67 , C23C16/509 , C23C16/458 , C23C16/46 , C23C16/50 , C23C16/505 , G01N21/55 , G01N21/65 , C23C16/455
CPC classification number: C23C16/52 , C23C16/45565 , C23C16/4557 , C23C16/458 , C23C16/46 , C23C16/50 , C23C16/505 , C23C16/509 , C23C16/5096 , G01B11/0625 , G01B11/0683 , G01N21/55 , G01N21/658 , G01N2201/1222 , H01L21/00 , H01L21/67248 , H01L21/67253 , H01L21/687
Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.
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公开(公告)号：US09157730B2
公开(公告)日：2015-10-13
申请号：US14056203
申请日：2013-10-17
Applicant: Applied Materials, Inc.
Inventor： Nagarajan Rajagopalan , Xinhai Han , Michael Tsiang , Masaki Ogata , Zhijun Jiang , Juan Carlos Rocha-Alvarez , Thomas Nowak , Jianhua Zhou , Ramprakash Sankarakrishnan , Ganesh Balasubramanian , Amit Kumar Bansal , Jeongmin Lee , Todd Egan , Edward Budiarto , Dmitriy Panasyuk , Terrance Y. Lee , Jian J. Chen , Mohamad A. Ayoub , Heung Lak Park , Patrick Reilly , Shahid Shaikh , Bok Hoen Kim , Sergey Starik
CPC classification number: C23C16/52 , C23C16/45565 , C23C16/4557 , C23C16/458 , C23C16/46 , C23C16/50 , C23C16/505 , C23C16/509 , C23C16/5096 , G01B11/0625 , G01B11/0683 , G01N21/55 , G01N21/658 , G01N2201/1222 , H01L21/00 , H01L21/67248 , H01L21/67253 , H01L21/687
Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.
Abstract translation: 描述了根据PECVD工艺处理衬底的方法。 调整衬底的温度分布以改变衬底上的沉积速率分布。 调整等离子体密度分布以改变跨衬底的沉积速率分布。 暴露于等离子体的室表面被加热以改善等离子体密度均匀性并减少在室表面上形成低质量的沉积物。 原位计量可用于监测沉积过程的进展并触发涉及衬底温度曲线，等离子体密度分布，压力，温度和反应物流动的控制动作。
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公开(公告)号：US10281261B2
公开(公告)日：2019-05-07
申请号：US15184276
申请日：2016-06-16
Applicant: Applied Materials, Inc.
Inventor： Khokan C. Paul , Edward Budiarto , Todd Egan , Mehdi Vaez-Iravani , Jeongmin Lee , Dale R. Du Bois , Terrance Y. Lee
Abstract: Embodiments of the present disclosure relate to apparatus and methods for forming films having uniformity of thickness on substrates. Embodiments of the present disclosure may be used to measure thickness or other properties of films being deposited on a substrate without knowing beforehand the surface properties of the substrate. Embodiments of the present disclosure may be used to measure thickness or other properties of a plurality of layers being formed. For example, embodiments of the present disclosure may be used in measuring thickness of vertical memory stacks.
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公开(公告)号：US10060032B2
公开(公告)日：2018-08-28
申请号：US15802496
申请日：2017-11-03
Applicant: Applied Materials, Inc.
Inventor： Nagarajan Rajagopalan , Xinhai Han , Michael Wenyoung Tsiang , Masaki Ogata , Zhijun Jiang , Juan Carlos Rocha-Alvarez , Thomas Nowak , Jianhua Zhou , Ramprakash Sankarakrishnan , Amit Kumar Bansal , Jeongmin Lee , Todd Egan , Edward Budiarto , Dmitriy Panasyuk , Terrance Y. Lee , Jian J. Chen , Mohamad A. Ayoub , Heung Lak Park , Patrick Reilly , Shahid Shaikh , Bok Hoen Kim , Sergey Starik , Ganesh Balasubramanian
IPC: G01B11/06 , C23C16/52 , H01L21/687 , C23C16/509 , H01L21/67 , G01N21/55 , G01N21/65 , C23C16/458 , C23C16/46 , C23C16/50 , C23C16/505 , C23C16/455 , H01L21/00
CPC classification number: C23C16/52 , C23C16/45565 , C23C16/4557 , C23C16/458 , C23C16/46 , C23C16/50 , C23C16/505 , C23C16/509 , C23C16/5096 , G01B11/0625 , G01B11/0683 , G01N21/55 , G01N21/658 , G01N2201/1222 , H01L21/00 , H01L21/67248 , H01L21/67253 , H01L21/687
Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.
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Patent Agency Ranking
公开(公告)号：US20150226540A1
公开(公告)日：2015-08-13
申请号：US14422148
申请日：2013-10-23
Applicant: Applied Materials, Inc.
Inventor： Nagarajan Rajagopalan , Xinhai Han , Michael Tsiang , Masaki Ogata , Zhijun Jiang , Juan Carlos Rocha-Alvarez , Thomas Nowak , Jianhua Zhou , Ramprakash Sankarakrishnan , Ganesh Balasubramanian , Amit Kumar Bansal , Jeongmin Lee , Todd Egan , Edward Budiarto , Dmitriy Panasyuk , Terrance Y. Lee , Jian J. Chen , Mohamad A. Ayoub , Heung Lak Park , Patrick Reilly , Shahid Shaikh , Bok Hoen Kim , Sergey Starik
IPC: G01B11/06 , C23C16/46 , C23C16/505 , C23C16/50 , C23C16/458
CPC classification number: C23C16/52 , C23C16/45565 , C23C16/4557 , C23C16/458 , C23C16/46 , C23C16/50 , C23C16/505 , C23C16/509 , C23C16/5096 , G01B11/0625 , G01B11/0683 , G01N21/55 , G01N21/658 , G01N2201/1222 , H01L21/00 , H01L21/67248 , H01L21/67253 , H01L21/687
Abstract: Apparatus and method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.
Abstract translation: 描述了根据PECVD工艺处理衬底的设备和方法。 调整衬底的温度分布以改变衬底上的沉积速率分布。 调整等离子体密度分布以改变跨衬底的沉积速率分布。 暴露于等离子体的室表面被加热以改善等离子体密度均匀性并减少在室表面上形成低质量的沉积物。 原位计量可用于监测沉积过程的进展并触发涉及衬底温度曲线，等离子体密度分布，压力，温度和反应物流动的控制动作。
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公开(公告)号：US11613812B2
公开(公告)日：2023-03-28
申请号：US17011853
申请日：2020-09-03
Applicant: Applied Materials, Inc.
Inventor： Nagarajan Rajagopalan , Xinhai Han , Michael Wenyoung Tsiang , Masaki Ogata , Zhijun Jiang , Juan Carlos Rocha-Alvarez , Thomas Nowak , Jianhua Zhou , Ramprakash Sankarakrishnan , Amit Kumar Bansal , Jeongmin Lee , Todd Egan , Edward Budiarto , Dmitriy Panasyuk , Terrance Y. Lee , Jian J. Chen , Mohamad A. Ayoub , Heung Lak Park , Patrick Reilly , Shahid Shaikh , Bok Hoen Kim , Sergey Starik , Ganesh Balasubramanian
IPC: C23C16/52 , G01B11/06 , H01L21/687 , H01L21/67 , C23C16/509 , G01N21/55 , G01N21/65 , H01L21/00 , C23C16/458 , C23C16/46 , C23C16/50 , C23C16/505 , C23C16/455
Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.
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公开(公告)号：US10886155B2
公开(公告)日：2021-01-05
申请号：US16249653
申请日：2019-01-16
Applicant: Applied Materials, Inc.
Inventor： Mingwei Zhu , Zihao Yang , Nag B. Patibandla , Daniel Lee Diehl , Yong Cao , Weimin Zeng , Renjing Zheng , Edward Budiarto , Surender Kumar Gurusamy , Todd Egan , Niranjan R. Khasgiwale
IPC: H01L21/67 , H01L21/687 , G01N21/21
Abstract: A method and apparatus for forming an optical stack having uniform and accurate layers is provided. A processing tool used to form the optical stack comprises, within an enclosed environment, a first transfer chamber, an on-board metrology unit, and a second transfer chamber. A first plurality of processing chambers is coupled to the first transfer chamber or the second transfer chamber. The on-board metrology unit is disposed between the first transfer chamber and the second transfer chamber. The on-board metrology unit is configured to measure one or more optical properties of the individual layers of the optical stack without exposing the layers to an ambient environment.
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公开(公告)号：US10793954B2
公开(公告)日：2020-10-06
申请号：US15976468
申请日：2018-05-10
Applicant: Applied Materials, Inc.
Inventor： Nagarajan Rajagopalan , Xinhai Han , Michael Wenyoung Tsiang , Masaki Ogata , Zhijun Jiang , Juan Carlos Rocha-Alvarez , Thomas Nowak , Jianhua Zhou , Ramprakash Sankarakrishnan , Amit Kumar Bansal , Jeongmin Lee , Todd Egan , Edward Budiarto , Dmitriy Panasyuk , Terrance Y. Lee , Jian J. Chen , Mohamad A. Ayoub , Heung Lak Park , Patrick Reilly , Shahid Shaikh , Bok Hoen Kim , Sergey Starik , Ganesh Balasubramanian
IPC: G01N21/00 , C23C16/52 , G01B11/06 , H01L21/687 , H01L21/67 , C23C16/509 , G01N21/55 , G01N21/65 , H01L21/00 , C23C16/458 , C23C16/46 , C23C16/50 , C23C16/505 , C23C16/455
Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.
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公开(公告)号：US10030306B2
公开(公告)日：2018-07-24
申请号：US14422148
申请日：2013-10-23
Applicant: Applied Materials, Inc.
Inventor： Nagarajan Rajagopalan , Xinhai Han , Michael Tsiang , Masaki Ogata , Zhijun Jiang , Juan Carlos Rocha-Alvarez , Thomas Nowak , Jianhua Zhou , Ramprakash Sankarakrishnan , Ganesh Balasubramanian , Amit Kumar Bansal , Jeongmin Lee , Todd Egan , Edward Budiarto , Dmitriy Panasyuk , Terrance Y. Lee , Jian J. Chen , Mohamad A. Ayoub , Heung Lak Park , Patrick Reilly , Shahid Shaikh , Bok Hoen Kim , Sergey Starik
IPC: G01N21/00 , C23C16/52 , G01B11/06 , H01L21/00 , H01L21/687 , H01L21/67 , C23C16/509 , C23C16/458 , C23C16/46 , C23C16/50 , C23C16/505 , G01N21/55 , G01N21/65 , C23C16/455
Abstract: Apparatus and method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.
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