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公开(公告)号：US12011801B2
公开(公告)日：2024-06-18
申请号：US18316216
申请日：2023-05-11
Applicant: Applied Materials, Inc.
Inventor： Rajeev Bajaj , Barry Lee Chin , Terrance Y. Lee
IPC: B33Y10/00 , B24B37/26 , B24D18/00 , B29C35/08 , B29C64/112 , B29C64/209 , B29C64/393 , B33Y30/00 , B33Y50/02 , B33Y80/00 , B29K75/00 , B29K105/00 , B29K105/16 , B29K509/02 , B29L31/00
CPC classification number: B24B37/26 , B24D18/00 , B24D18/009 , B29C35/0805 , B29C64/112 , B29C64/209 , B29C64/393 , B33Y10/00 , B33Y30/00 , B33Y50/02 , B33Y80/00 , B29C2035/0827 , B29K2075/00 , B29K2105/0002 , B29K2105/16 , B29K2509/02 , B29L2031/736
Abstract: A method of fabricating a polishing layer of a polishing pad includes successively depositing a plurality of layers with a 3D printer, each layer of the plurality of polishing layers deposited by ejecting a pad material precursor from a nozzle and solidifying the pad material precursor to form a solidified pad material.
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公开(公告)号：US09744724B2
公开(公告)日：2017-08-29
申请号：US15237140
申请日：2016-08-15
Applicant: Applied Materials, Inc.
Inventor： Rajeev Bajaj , Barry Lee Chin , Terrance Y. Lee
IPC: B29C67/00 , B33Y10/00 , B33Y30/00 , B24B37/26 , B24D18/00 , B33Y50/02 , B33Y80/00 , B29C35/08 , B29K75/00 , B29K509/02 , B29K105/00 , B29K105/16 , B29L31/00
CPC classification number: B29C64/209 , B24B37/26 , B24D18/00 , B24D18/009 , B29C35/0805 , B29C64/112 , B29C64/20 , B29C2035/0827 , B29K2075/00 , B29K2105/0002 , B29K2105/16 , B29K2509/02 , B29L2031/736 , B33Y10/00 , B33Y30/00 , B33Y50/02 , B33Y80/00
Abstract: A method of fabricating a polishing layer of a polishing pad includes successively depositing a plurality of layers with a 3D printer, each layer of the plurality of polishing layers deposited by ejecting a pad material precursor from a nozzle and solidifying the pad material precursor to form a solidified pad material.
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公开(公告)号：US20150273770A1
公开(公告)日：2015-10-01
申请号：US14737356
申请日：2015-06-11
Applicant: Applied Materials, Inc.
Inventor： Rajeev Bajaj , Barry Lee Chin , Terrance Y. Lee
CPC classification number: B29C64/209 , B24B37/26 , B24D18/00 , B24D18/009 , B29C35/0805 , B29C64/112 , B29C64/20 , B29C2035/0827 , B29K2075/00 , B29K2105/0002 , B29K2105/16 , B29K2509/02 , B29L2031/736 , B33Y10/00 , B33Y30/00 , B33Y50/02 , B33Y80/00
Abstract: A method of fabricating a polishing layer of a polishing pad includes successively depositing a plurality of layers with a 3D printer, each layer of the plurality of polishing layers deposited by ejecting a pad material precursor from a nozzle and solidifying the pad material precursor to form a solidified pad material.
Abstract translation: 制造抛光垫的抛光层的方法包括用3D打印机连续沉积多个层，通过从喷嘴喷射垫材料前体而沉积多个抛光层的每层，并固化焊盘材料前体以形成 固化垫材料。
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公开(公告)号：US11613812B2
公开(公告)日：2023-03-28
申请号：US17011853
申请日：2020-09-03
Applicant: Applied Materials, Inc.
Inventor： Nagarajan Rajagopalan , Xinhai Han , Michael Wenyoung Tsiang , Masaki Ogata , Zhijun Jiang , Juan Carlos Rocha-Alvarez , Thomas Nowak , Jianhua Zhou , Ramprakash Sankarakrishnan , Amit Kumar Bansal , Jeongmin Lee , Todd Egan , Edward Budiarto , Dmitriy Panasyuk , Terrance Y. Lee , Jian J. Chen , Mohamad A. Ayoub , Heung Lak Park , Patrick Reilly , Shahid Shaikh , Bok Hoen Kim , Sergey Starik , Ganesh Balasubramanian
IPC: C23C16/52 , G01B11/06 , H01L21/687 , H01L21/67 , C23C16/509 , G01N21/55 , G01N21/65 , H01L21/00 , C23C16/458 , C23C16/46 , C23C16/50 , C23C16/505 , C23C16/455
Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.
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公开(公告)号：US10793954B2
公开(公告)日：2020-10-06
申请号：US15976468
申请日：2018-05-10
Applicant: Applied Materials, Inc.
Inventor： Nagarajan Rajagopalan , Xinhai Han , Michael Wenyoung Tsiang , Masaki Ogata , Zhijun Jiang , Juan Carlos Rocha-Alvarez , Thomas Nowak , Jianhua Zhou , Ramprakash Sankarakrishnan , Amit Kumar Bansal , Jeongmin Lee , Todd Egan , Edward Budiarto , Dmitriy Panasyuk , Terrance Y. Lee , Jian J. Chen , Mohamad A. Ayoub , Heung Lak Park , Patrick Reilly , Shahid Shaikh , Bok Hoen Kim , Sergey Starik , Ganesh Balasubramanian
IPC: G01N21/00 , C23C16/52 , G01B11/06 , H01L21/687 , H01L21/67 , C23C16/509 , G01N21/55 , G01N21/65 , H01L21/00 , C23C16/458 , C23C16/46 , C23C16/50 , C23C16/505 , C23C16/455
Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.
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Patent Agency Ranking
公开(公告)号：US10030306B2
公开(公告)日：2018-07-24
申请号：US14422148
申请日：2013-10-23
Applicant: Applied Materials, Inc.
Inventor： Nagarajan Rajagopalan , Xinhai Han , Michael Tsiang , Masaki Ogata , Zhijun Jiang , Juan Carlos Rocha-Alvarez , Thomas Nowak , Jianhua Zhou , Ramprakash Sankarakrishnan , Ganesh Balasubramanian , Amit Kumar Bansal , Jeongmin Lee , Todd Egan , Edward Budiarto , Dmitriy Panasyuk , Terrance Y. Lee , Jian J. Chen , Mohamad A. Ayoub , Heung Lak Park , Patrick Reilly , Shahid Shaikh , Bok Hoen Kim , Sergey Starik
IPC: G01N21/00 , C23C16/52 , G01B11/06 , H01L21/00 , H01L21/687 , H01L21/67 , C23C16/509 , C23C16/458 , C23C16/46 , C23C16/50 , C23C16/505 , G01N21/55 , G01N21/65 , C23C16/455
Abstract: Apparatus and method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.
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公开(公告)号：US09458537B2
公开(公告)日：2016-10-04
申请号：US14869371
申请日：2015-09-29
Applicant: Applied Materials, Inc.
Inventor： Nagarajan Rajagopalan , Xinhai Han , Michael Wenyoung Tsiang , Masaki Ogata , Zhijun Jiang , Juan Carlos Rocha-Alvarez , Thomas Nowak , Jianhua Zhou , Ramprakash Sankarakrishnan , Amit Kumar Bansal , Jeongmin Lee , Todd Egan , Edward Budiarto , Dmitriy Panasyuk , Terrance Y. Lee , Jian J. Chen , Mohamad A. Ayoub , Heung Lak Park , Patrick Reilly , Shahid Shaikh , Bok Hoen Kim , Sergey Starik , Ganesh Balasubramanian
IPC: G01N21/00 , C23C16/52 , G01B11/06 , H01L21/00 , H01L21/687 , H01L21/67 , C23C16/509 , C23C16/458 , C23C16/46 , C23C16/50 , C23C16/505 , G01N21/55 , G01N21/65 , C23C16/455
CPC classification number: C23C16/52 , C23C16/45565 , C23C16/4557 , C23C16/458 , C23C16/46 , C23C16/50 , C23C16/505 , C23C16/509 , C23C16/5096 , G01B11/0625 , G01B11/0683 , G01N21/55 , G01N21/658 , G01N2201/1222 , H01L21/00 , H01L21/67248 , H01L21/67253 , H01L21/687
Abstract: A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.
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公开(公告)号：US09457520B2
公开(公告)日：2016-10-04
申请号：US14737356
申请日：2015-06-11
Applicant: Applied Materials, Inc.
Inventor： Rajeev Bajaj , Barry Lee Chin , Terrance Y. Lee
CPC classification number: B29C64/209 , B24B37/26 , B24D18/00 , B24D18/009 , B29C35/0805 , B29C64/112 , B29C64/20 , B29C2035/0827 , B29K2075/00 , B29K2105/0002 , B29K2105/16 , B29K2509/02 , B29L2031/736 , B33Y10/00 , B33Y30/00 , B33Y50/02 , B33Y80/00
Abstract: A method of fabricating a polishing layer of a polishing pad includes successively depositing a plurality of layers with a 3D printer, each layer of the plurality of polishing layers deposited by ejecting a pad material precursor from a nozzle and solidifying the pad material precursor to form a solidified pad material.
Abstract translation: 制造抛光垫的抛光层的方法包括用3D打印机连续沉积多个层，通过从喷嘴喷射垫材料前体而沉积多个抛光层的每层，并固化焊盘材料前体以形成 固化垫材料。
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公开(公告)号：US11453097B2
公开(公告)日：2022-09-27
申请号：US16691581
申请日：2019-11-21
Applicant: Applied Materials, Inc.
Inventor： Rajeev Bajaj , Thomas H. Osterheld , Hung Chen , Terrance Y. Lee
IPC: B24B37/04 , B24B57/02 , H01L21/67 , H01L21/321 , H01L21/306 , H01L21/304 , B24B37/11 , B24B37/30
Abstract: A substrate polishing apparatus is disclosed that includes a polishing platform having two or more zones, each zone adapted to receive a different slurry component. A substrate polishing system is provided having a holder to hold a substrate, a polishing platform having a polishing pad, and a distribution system adapted to dispense, in a timed sequence, at least two different slurry components selected from a group consisting of an oxidation slurry component, a material removal slurry component, and a corrosion inhibiting slurry component. Polishing methods and systems adapted to polish substrates are provided, as are numerous other aspects.
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公开(公告)号：US20210069856A1
公开(公告)日：2021-03-11
申请号：US17102181
申请日：2020-11-23
Applicant: Applied Materials, Inc.
Inventor： Rajeev Bajaj , Barry Lee Chin , Terrance Y. Lee
IPC: B24B37/26 , B33Y80/00 , B24D18/00 , B29C64/393 , B33Y10/00 , B29C35/08 , B29C64/112 , B33Y30/00 , B33Y50/02 , B29C64/209
Abstract: A method of fabricating a polishing layer of a polishing pad includes successively depositing a plurality of layers with a 3D printer, each layer of the plurality of polishing layers deposited by ejecting a pad material precursor from a nozzle and solidifying the pad material precursor to form a solidified pad material.
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