公开(公告)号：US11031262B2

公开(公告)日：2021-06-08

申请号：US16838128

申请日：2020-04-02

申请人： Applied Materials, Inc.

发明人： Saptarshi Basu ,  Jeongmin Lee ,  Paul Connors ,  Dale R. Du Bois ,  Prashant Kumar Kulshreshtha ,  Karthik Thimmavajjula Narasimha ,  Brett Berens ,  Kalyanjit Ghosh ,  Jianhua Zhou ,  Ganesh Balasubramanian ,  Kwangduk Douglas Lee ,  Juan Carlos Rocha-Alvarez ,  Hiroyuki Ogiso ,  Liliya Krivulina ,  Rick Gilbert ,  Mohsin Waqar ,  Venkatanarayana Shankaramurthy ,  Hari K. Ponnekanti

IPC分类号： C23C16/40 ,  H01L21/67 ,  H01J37/32 ,  H01L21/687

摘要： Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.

公开(公告)号：US10403515B2

公开(公告)日：2019-09-03

申请号：US15013547

申请日：2016-02-02

申请人： Applied Materials, Inc.

发明人： Saptarshi Basu ,  Jeongmin Lee ,  Paul Connors ,  Dale R. Du Bois ,  Prashant Kumar Kulshreshtha ,  Karthik Thimmavajjula Narasimha ,  Brett Berens ,  Kalyanjit Ghosh ,  Jianhua Zhou ,  Ganesh Balasubramanian ,  Kwangduk Douglas Lee ,  Juan Carlos Rocha-Alvarez ,  Hiroyuki Ogiso ,  Liliya Krivulina ,  Rick Gilbert ,  Mohsin Waqar ,  Venkatanarayana Shankaramurthy ,  Hari K. Ponnekanti

IPC分类号： C23C16/40 ,  H01L21/67 ,  H01J37/32 ,  H01L21/687

摘要： Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.

公开(公告)号：US11898249B2

公开(公告)日：2024-02-13

申请号：US18108989

申请日：2023-02-13

申请人： Applied Materials, Inc.

发明人： Nagarajan Rajagopalan ,  Xinhai Han ,  Michael Wenyoung Tsiang ,  Masaki Ogata ,  Zhijun Jiang ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Jianhua Zhou ,  Ramprakash Sankarakrishnan ,  Amit Kumar Bansal ,  Jeongmin Lee ,  Todd Egan ,  Edward W. Budiarto ,  Dmitriy Panasyuk ,  Terrance Y. Lee ,  Jian J. Chen ,  Mohamad A. Ayoub ,  Heung Lak Park ,  Patrick Reilly ,  Shahid Shaikh ,  Bok Hoen Kim ,  Sergey Starik ,  Ganesh Balasubramanian

IPC分类号： C23C16/52 ,  G01B11/06 ,  H01L21/687 ,  H01L21/67 ,  C23C16/509 ,  G01N21/55 ,  G01N21/65 ,  H01L21/00 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/455

CPC分类号： C23C16/52 ,  C23C16/458 ,  C23C16/4557 ,  C23C16/45565 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  G01B11/0625 ,  G01B11/0683 ,  G01N21/55 ,  G01N21/658 ,  H01L21/00 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/687 ,  G01N2201/1222

摘要： A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

公开(公告)号：US10527407B2

公开(公告)日：2020-01-07

申请号：US16356317

申请日：2019-03-18

申请人： Applied Materials, Inc.

发明人： Khokan C. Paul ,  Edward Budiarto ,  Todd Egan ,  Mehdi Vaez-Iravani ,  Jeongmin Lee ,  Dale R. Du Bois ,  Terrance Y. Lee

IPC分类号： G01B11/06 ,  H01L21/66 ,  G01B7/06 ,  C23C16/52 ,  C23C16/509 ,  H01J37/32 ,  H01L21/67

摘要： Embodiments of the present disclosure relate to apparatus and methods for forming films having uniformity of thickness on substrates. Embodiments of the present disclosure may be used to measure thickness or other properties of films being deposited on a substrate without knowing beforehand the surface properties of the substrate. Embodiments of the present disclosure may be used to measure thickness or other properties of a plurality of layers being formed. For example, embodiments of the present disclosure may be used in measuring thickness of vertical memory stacks.

公开(公告)号：US10281261B2

公开(公告)日：2019-05-07

申请号：US15184276

申请日：2016-06-16

申请人： Applied Materials, Inc.

发明人： Khokan C. Paul ,  Edward Budiarto ,  Todd Egan ,  Mehdi Vaez-Iravani ,  Jeongmin Lee ,  Dale R. Du Bois ,  Terrance Y. Lee

IPC分类号： G01B11/06 ,  H01L21/66 ,  G01B7/06 ,  C23C16/52 ,  C23C16/509 ,  H01J37/32 ,  H01L21/67

摘要： Embodiments of the present disclosure relate to apparatus and methods for forming films having uniformity of thickness on substrates. Embodiments of the present disclosure may be used to measure thickness or other properties of films being deposited on a substrate without knowing beforehand the surface properties of the substrate. Embodiments of the present disclosure may be used to measure thickness or other properties of a plurality of layers being formed. For example, embodiments of the present disclosure may be used in measuring thickness of vertical memory stacks.

公开(公告)号：US10060032B2

公开(公告)日：2018-08-28

申请号：US15802496

申请日：2017-11-03

申请人： Applied Materials, Inc.

发明人： Nagarajan Rajagopalan ,  Xinhai Han ,  Michael Wenyoung Tsiang ,  Masaki Ogata ,  Zhijun Jiang ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Jianhua Zhou ,  Ramprakash Sankarakrishnan ,  Amit Kumar Bansal ,  Jeongmin Lee ,  Todd Egan ,  Edward Budiarto ,  Dmitriy Panasyuk ,  Terrance Y. Lee ,  Jian J. Chen ,  Mohamad A. Ayoub ,  Heung Lak Park ,  Patrick Reilly ,  Shahid Shaikh ,  Bok Hoen Kim ,  Sergey Starik ,  Ganesh Balasubramanian

IPC分类号： G01B11/06 ,  C23C16/52 ,  H01L21/687 ,  C23C16/509 ,  H01L21/67 ,  G01N21/55 ,  G01N21/65 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/455 ,  H01L21/00

CPC分类号： C23C16/52 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  G01B11/0625 ,  G01B11/0683 ,  G01N21/55 ,  G01N21/658 ,  G01N2201/1222 ,  H01L21/00 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/687

摘要： A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

公开(公告)号：US20150226540A1

公开(公告)日：2015-08-13

申请号：US14422148

申请日：2013-10-23

申请人： Applied Materials, Inc.

发明人： Nagarajan Rajagopalan ,  Xinhai Han ,  Michael Tsiang ,  Masaki Ogata ,  Zhijun Jiang ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Jianhua Zhou ,  Ramprakash Sankarakrishnan ,  Ganesh Balasubramanian ,  Amit Kumar Bansal ,  Jeongmin Lee ,  Todd Egan ,  Edward Budiarto ,  Dmitriy Panasyuk ,  Terrance Y. Lee ,  Jian J. Chen ,  Mohamad A. Ayoub ,  Heung Lak Park ,  Patrick Reilly ,  Shahid Shaikh ,  Bok Hoen Kim ,  Sergey Starik

IPC分类号： G01B11/06 ,  C23C16/46 ,  C23C16/505 ,  C23C16/50 ,  C23C16/458

CPC分类号： C23C16/52 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  G01B11/0625 ,  G01B11/0683 ,  G01N21/55 ,  G01N21/658 ,  G01N2201/1222 ,  H01L21/00 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/687

摘要： Apparatus and method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

摘要翻译： 描述了根据PECVD工艺处理衬底的设备和方法。 调整衬底的温度分布以改变衬底上的沉积速率分布。 调整等离子体密度分布以改变跨衬底的沉积速率分布。 暴露于等离子体的室表面被加热以改善等离子体密度均匀性并减少在室表面上形成低质量的沉积物。 原位计量可用于监测沉积过程的进展并触发涉及衬底温度曲线，等离子体密度分布，压力，温度和反应物流动的控制动作。

公开(公告)号：US11948790B2

公开(公告)日：2024-04-02

申请号：US17124705

申请日：2020-12-17

申请人： Applied Materials, Inc.

发明人： Tuan Anh Nguyen ,  Jeongmin Lee ,  Anjana M. Patel ,  Abdul Aziz Khaja

IPC分类号： H01L21/02 ,  B08B7/00 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/687

CPC分类号： H01L21/02087 ,  B08B7/0035 ,  H01J37/3244 ,  H01J37/32715 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/68785 ,  H01J37/32357 ,  H01J2237/334

摘要： Embodiments described herein generally relate to apparatuses for processing a substrate. In one or more embodiments, a heater support kit includes a heater assembly contains a heater plate having an upper surface and a lower surface, a chuck ring disposed on at least a portion of the upper surface of the heater plate, a heater arm assembly contains a heater arm and supporting the heater assembly, and a heater support plate disposed between the heater plate and the heater arm and in contact with at least a portion of the lower surface of the heater plate.

公开(公告)号：US11613812B2

公开(公告)日：2023-03-28

申请号：US17011853

申请日：2020-09-03

申请人： Applied Materials, Inc.

发明人： Nagarajan Rajagopalan ,  Xinhai Han ,  Michael Wenyoung Tsiang ,  Masaki Ogata ,  Zhijun Jiang ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Jianhua Zhou ,  Ramprakash Sankarakrishnan ,  Amit Kumar Bansal ,  Jeongmin Lee ,  Todd Egan ,  Edward Budiarto ,  Dmitriy Panasyuk ,  Terrance Y. Lee ,  Jian J. Chen ,  Mohamad A. Ayoub ,  Heung Lak Park ,  Patrick Reilly ,  Shahid Shaikh ,  Bok Hoen Kim ,  Sergey Starik ,  Ganesh Balasubramanian

IPC分类号： C23C16/52 ,  G01B11/06 ,  H01L21/687 ,  H01L21/67 ,  C23C16/509 ,  G01N21/55 ,  G01N21/65 ,  H01L21/00 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/455

摘要： A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

公开(公告)号：US10903066B2

公开(公告)日：2021-01-26

申请号：US16419813

申请日：2019-05-22

申请人： Applied Materials, Inc.

发明人： Tuan Anh Nguyen ,  Jeongmin Lee ,  Anjana M. Patel ,  Abdul Aziz Khaja

IPC分类号： H01L21/02 ,  B08B7/00 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/67 ,  H01L21/687

摘要： Embodiments described herein generally relate to apparatuses for processing a substrate. In one or more embodiments, a heater support kit includes a heater assembly contains a heater plate having an upper surface and a lower surface, a chuck ring disposed on at least a portion of the upper surface of the heater plate, a heater arm assembly contains a heater arm and supporting the heater assembly, and a heater support plate disposed between the heater plate and the heater arm and in contact with at least a portion of the lower surface of the heater plate.