Invention Grant
- Patent Title: CMP slurry and CMP method
-
Application No.: US16138806Application Date: 2018-09-21
-
Publication No.: US10692732B2Publication Date: 2020-06-23
- Inventor: Chun-Wei Hsu , Chi-Jen Liu , Kei-Wei Chen , Liang-Guang Chen , William Weilun Hong , Chi-hsiang Shen , Chia-Wei Ho , Yang-chun Cheng
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Seed IP Law Group LLP
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/321 ; C09G1/02 ; H01L21/768 ; H01L23/532

Abstract:
The current disclosure describes a metal surface chemical mechanical polishing technique. A complex agent or micelle is included in the metal CMP slurry. The complex agent bonds with the oxidizer contained in the CMP slurry to form a complex, e.g., a supramolecular assembly, with an oxidizer molecule in the core of the assembly and surrounded by the complex agent molecule(s). The formed complexes have an enlarged size.
Public/Granted literature
- US20200098590A1 CMP SLURRY AND CMP METHOD Public/Granted day:2020-03-26
Information query
IPC分类: