Invention Grant
- Patent Title: Hardmask composition, method of preparing the same, and method of forming patterned layer by using the hardmask composition
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Application No.: US15874226Application Date: 2018-01-18
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Publication No.: US10777412B2Publication Date: 2020-09-15
- Inventor: Dongwook Lee , Sangwon Kim , Minsu Seol , Seongjun Park , Hyeonjin Shin , Yunseong Lee , Seongjun Jeong , Alum Jung
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@dfb0735
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01B1/00 ; H01L21/033 ; G03F7/11 ; G03F7/09 ; H01B1/04 ; C01B32/194 ; H01L21/311 ; B82Y30/00 ; B82Y40/00
Abstract:
Provided are a hardmask composition, a method of preparing the same, and a method of forming a patterned layer using the hardmask composition. The hardmask composition may include graphene quantum dots, a metal compound, and a solvent. The metal compound may be chemically bonded (e.g., covalently bonded) to the graphene quantum dots. The metal compound may include a metal oxide. The metal oxide may include at least one of zirconium (Zr) oxide, titanium (Ti) oxide, tungsten (W) oxide, or aluminum (Al) oxide. The graphene quantum dots may be bonded to the metal compound by an M—O—C bond or an M—C bond, where M is a metal element, O is oxygen, and C is carbon.
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