公开(公告)号：US12211744B2

公开(公告)日：2025-01-28

申请号：US17552756

申请日：2021-12-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook Shin ,  Hyeonjin Shin ,  Alum Jung ,  Changseok Lee

IPC: H01L21/768 ,  C01B32/186 ,  C23C16/02 ,  C23C16/26 ,  C23C16/505 ,  C23C16/511 ,  H01L21/285 ,  H01L23/532

Abstract: A method of forming nanocrystalline graphene according to an embodiment may include: arranging a substrate having a pattern in a reaction chamber; injecting a reaction gas into the reaction chamber, where the reaction gas includes a carbon source gas, an inert gas, and a hydrogen gas that are mixed; generating a plasma of the reaction gas in the reaction chamber; and directly growing the nanocrystalline graphene on a surface of the pattern using the plasma of the reaction gas at a process temperature. The pattern may include a first material and the substrate may include a second material different from the first material.

公开(公告)号：US10931209B2

公开(公告)日：2021-02-23

申请号：US15378577

申请日：2016-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Young Kim ,  Kyungeun Byun ,  Hyeonjin Shin ,  Alum Jung

IPC: H02N1/04

Abstract: Example embodiments relate to an energy harvester using triboelectricity, and to an apparatus including the energy harvester. The energy harvester may include a first structure having a first triboelectric material, a second structure having a second triboelectric material, and a closed structure isolating friction surfaces of the first and second triboelectric materials from external environment. The energy harvester may further include a filling material in the closed structure. The filling material may have an electric charge. The filling material may have a viscosity. At least a portion of the closed structure may include an elastic material.

公开(公告)号：US12183783B2

公开(公告)日：2024-12-31

申请号：US17882169

申请日：2022-08-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Alum Jung ,  Kyung-Eun Byun ,  Keunwook Shin

IPC: H01L29/06 ,  H01L21/02

Abstract: A stacked structure may include a first material layer, a two-dimensional material layer on the first material layer, and a second material layer on the two-dimensional material layer. The two-dimensional material layer may include a plurality of holes that each expose a portion of the first material layer. The second material layer may be coupled to the first material layer through the plurality of holes.

公开(公告)号：US11034847B2

公开(公告)日：2021-06-15

申请号：US15944920

申请日：2018-04-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsu Seol ,  Sangwon Kim ,  Hyeonjin Shin ,  Dongwook Lee ,  Seongjun Park ,  Yunseong Lee ,  Seongjun Jeong ,  Alum Jung

IPC: C09D7/63 ,  G03F7/11 ,  G03F7/09 ,  G03F7/07 ,  G03F7/40 ,  C07F3/02 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38 ,  H01L21/311 ,  H01L21/3213 ,  G03F7/075

Abstract: Provided are a hardmask composition including a structure represented by Formula 1 and a solvent, a method of forming a pattern using the hardmask composition, and a hardmask formed from the hardmask composition. wherein in Formula 1, R1 to R8, X, and M are described in detail in the detailed description.

公开(公告)号：US20180006582A1

公开(公告)日：2018-01-04

申请号：US15378577

申请日：2016-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Young Kim ,  Kyungeun Byun ,  Hyeonjin Shin ,  Alum Jung

IPC: H02N1/04

CPC classification number: H02N1/04

Abstract: Example embodiments relate to an energy harvester using triboelectricity, and to an apparatus including the energy harvester. The energy harvester may include a first structure having a first triboelectric material, a second structure having a second triboelectric material, and a closed structure isolating friction surfaces of the first and second triboelectric materials from external environment. The energy harvester may further include a filling material in the closed structure. The filling material may have an electric charge. The filling material may have a viscosity. At least a portion of the closed structure may include an elastic material.

公开(公告)号：US12217958B2

公开(公告)日：2025-02-04

申请号：US16807702

申请日：2020-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook Shin ,  Janghee Lee ,  Seunggeol Nam ,  Hyeonjin Shin ,  Hyunseok Lim ,  Alum Jung ,  Kyung-Eun Byun ,  Jeonil Lee ,  Yeonchoo Cho

IPC: C23C16/02 ,  C23C16/26 ,  H01L21/02

Abstract: A method of pre-treating a substrate on which graphene will be directly formed may include pre-treating the substrate using a pre-treatment gas including at least a carbon source and hydrogen.

公开(公告)号：US10850985B2

公开(公告)日：2020-12-01

申请号：US16233513

申请日：2018-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Alum Jung ,  Keunwook Shin ,  Kyung-Eun Byun ,  Hyeonjin Shin ,  Hyunseok Lim ,  Seunggeol Nam ,  Hyunjae Song ,  Yeonchoo Cho

IPC: H01L29/12 ,  C01B32/186 ,  C23C16/26 ,  C23C16/505 ,  C23C16/511 ,  H01L21/02 ,  H01L29/16 ,  H01L29/06 ,  H01L29/04

Abstract: A method of forming nanocrystalline graphene by a plasma-enhanced chemical vapor deposition process is provided. The method of forming nanocrystalline graphene includes arranging a protective layer on a substrate and growing nanocrystalline graphene directly on the protective layer by using a plasma of a reaction gas. The reaction gas may include a mixed gas of a carbon source gas, an inert gas, and hydrogen gas.

公开(公告)号：US10808142B2

公开(公告)日：2020-10-20

申请号：US15925034

申请日：2018-03-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangwon Kim ,  Minsu Seol ,  Hyeonjin Shin ,  Dongwook Lee ,  Yunseong Lee ,  Seongjun Jeong ,  Alum Jung

IPC: H01L21/027 ,  C09D165/00 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/32 ,  H01L21/311 ,  C01B32/184 ,  G03F7/09 ,  C01B32/182 ,  C08G61/02 ,  B82Y40/00 ,  B82Y30/00

Abstract: Provided are a method of preparing a graphene quantum dot, a graphene quantum dot prepared using the method, a hardmask composition including the graphene quantum dot, a method of forming a pattern using the hardmask composition, and a hardmask obtained from the hardmask composition. The method of preparing a graphene quantum dot includes reacting a graphene quantum dot composition and an including a polyaromatic hydrocarbon compound and an organic solvent at an atmospheric pressure and a temperature of about 250° C. The polyaromatic hydrocarbon compound may include at least four aromatic rings.

公开(公告)号：US10551735B2

公开(公告)日：2020-02-04

申请号：US15946087

申请日：2018-04-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongjun Jeong ,  Hyeonjin Shin ,  Sangwon Kim ,  Seongjun Park ,  Minsu Seol ,  Dongwook Lee ,  Yunseong Lee ,  Alum Jung

IPC: G03F7/20 ,  G03F1/62 ,  G03F1/22

Abstract: A pellicle composition for a photomask, a pellicle for a photomask, the pellicle for a photomask being formed from the pellicle composition, a method of forming the pellicle, a reticle including the pellicle, and an exposure apparatus for lithography including the reticle are provided. The pellicle composition includes: at least one selected from graphene quantum dots and a graphene quantum dot precursor, the graphene quantum dots having a size of about 50 nm or less; and a solvent.

公开(公告)号：US20240047528A1

公开(公告)日：2024-02-08

申请号：US18156049

申请日：2023-01-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsu SEOL ,  Keunwook Shin ,  Alum Jung ,  Junyoung Kwon ,  Kyung-Eun Byun ,  Minseok Yoo

IPC: H01L29/786 ,  H01L29/16 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/66969

Abstract: A semiconductor device may include a two-dimensional (2D) material layer, a source electrode and a drain electrode spaced apart from each other on the 2D material layer, a gate insulating layer and a gate electrode on the 2D material layer between the source electrode and the drain electrode, and graphene layers on both sides of the gate insulating layer. The 2D material layer may include a 2D semiconductor material having a polycrystalline structure. The 2D material layer may include a sheet member and a protrusion. The sheet member may extend along one plane. The protrusion may extend in one direction perpendicular to the one plane. The graphene layer may cover a part of the sheet member and the protrusion.