- 专利标题： Hardmask composition, method of preparing the same, and method of forming patterned layer by using the hardmask composition
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申请号： US15874226申请日： 2018-01-18
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公开(公告)号： US10777412B2公开(公告)日： 2020-09-15
- 发明人: Dongwook Lee , Sangwon Kim , Minsu Seol , Seongjun Park , Hyeonjin Shin , Yunseong Lee , Seongjun Jeong , Alum Jung
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@dfb0735
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01B1/00 ; H01L21/033 ; G03F7/11 ; G03F7/09 ; H01B1/04 ; C01B32/194 ; H01L21/311 ; B82Y30/00 ; B82Y40/00
摘要：
Provided are a hardmask composition, a method of preparing the same, and a method of forming a patterned layer using the hardmask composition. The hardmask composition may include graphene quantum dots, a metal compound, and a solvent. The metal compound may be chemically bonded (e.g., covalently bonded) to the graphene quantum dots. The metal compound may include a metal oxide. The metal oxide may include at least one of zirconium (Zr) oxide, titanium (Ti) oxide, tungsten (W) oxide, or aluminum (Al) oxide. The graphene quantum dots may be bonded to the metal compound by an M—O—C bond or an M—C bond, where M is a metal element, O is oxygen, and C is carbon.
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