A method is presented for triggering asymmetric threshold voltage along a channel of a vertical transport field effect transistor (VTFET). The method includes constructing a first set fins from a first material, constructing a second set of fins from a second material, forming a source region between the first set of fins, and forming a drain region between the second set of fins, the source region composed of a different material than the drain region. The method further includes depositing a first high-k metal gate over the first set of fins and depositing a second high-k metal gate over the second set of fins, the second high-k metal gate being different than the first high-k metal gate such that the asymmetric threshold voltage is present along the channel of the VTFET in a region defined at the bottom of the first and second set of fins.