Invention Grant
- Patent Title: Semiconductor structure cutting process and structures formed thereby
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Application No.: US17085121Application Date: 2020-10-30
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Publication No.: US11444080B2Publication Date: 2022-09-13
- Inventor: Chih-Chang Hung , Chia-Jen Chen , Ming-Ching Chang , Shu-Yuan Ku , Yi-Hsuan Hsiao , I-Wei Yang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/311 ; H01L21/3213 ; H01L21/762 ; H01L21/8234 ; H01L29/06 ; H01L29/08 ; H01L29/423 ; H01L29/49 ; H01L29/66 ; H01L21/283 ; H01L29/78 ; H01L21/02 ; H01L21/3105 ; H01L21/321

Abstract:
Methods of cutting gate structures, and structures formed, are described. In an embodiment, a structure includes first and second gate structures over an active area, and a gate cut-fill structure. The first and second gate structures extend parallel. The active area includes a source/drain region disposed laterally between the first and second gate structures. The gate cut-fill structure has first and second primary portions and an intermediate portion. The first and second primary portions abut the first and second gate structures, respectively. The intermediate portion extends laterally between the first and second primary portions. First and second widths of the first and second primary portions along longitudinal midlines of the first and second gate structures, respectively, are each greater than a third width of the intermediate portion midway between the first and second gate structures and parallel to the longitudinal midline of the first gate structure.
Public/Granted literature
- US20210050350A1 Semiconductor Structure Cutting Process and Structures Formed Thereby Public/Granted day:2021-02-18
Information query
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