Invention Grant
- Patent Title: Memory device including multiple decks of memory cells and pillars extending through the decks
-
Application No.: US17008130Application Date: 2020-08-31
-
Publication No.: US11532638B2Publication Date: 2022-12-20
- Inventor: Darwin A. Clampitt , Shawn D. Lyonsmith , Matthew J. King , Lisa M. Clampitt , John Hopkins , Kevin Y. Titus , Indra V. Chary , Martin Jared Barclay , Anilkumar Chandolu , Pavithra Natarajan , Roger W. Lindsay
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L23/528 ; H01L27/11565 ; H01L23/522 ; H01L27/11597 ; H01L21/02 ; H01L21/67 ; G11C16/04
Abstract:
Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a first deck located over a substrate, and a second deck located over the first deck, and pillars extending through the first and second decks. The first deck includes first memory cells, first control gates associated with the first memory cells, and first conductive paths coupled to the first control gates. The second conductive paths include second conductive pads located on a first level of the apparatus over the substrate. The second deck includes second memory cells, second control gates associated with the second memory cells, and second conductive paths coupled to the second control gates. The second conductive paths include second conductive pads located on a second level of the apparatus. The first and second conductive pads having lengths in a direction perpendicular to a direction from the first deck to the second deck.
Public/Granted literature
- US20220068956A1 MEMORY DEVICE INCLUDING MULTIPLE DECKS OF MEMORY CELLS AND PILLARS EXTENDING THROUGH THE DECKS Public/Granted day:2022-03-03
Information query
IPC分类:
