公开(公告)号：US11532638B2

公开(公告)日：2022-12-20

申请号：US17008130

申请日：2020-08-31

申请人： Micron Technology, Inc.

发明人： Darwin A. Clampitt ,  Shawn D. Lyonsmith ,  Matthew J. King ,  Lisa M. Clampitt ,  John Hopkins ,  Kevin Y. Titus ,  Indra V. Chary ,  Martin Jared Barclay ,  Anilkumar Chandolu ,  Pavithra Natarajan ,  Roger W. Lindsay

IPC分类号： H01L27/11582 ,  H01L23/528 ,  H01L27/11565 ,  H01L23/522 ,  H01L27/11597 ,  H01L21/02 ,  H01L21/67 ,  G11C16/04

摘要： Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a first deck located over a substrate, and a second deck located over the first deck, and pillars extending through the first and second decks. The first deck includes first memory cells, first control gates associated with the first memory cells, and first conductive paths coupled to the first control gates. The second conductive paths include second conductive pads located on a first level of the apparatus over the substrate. The second deck includes second memory cells, second control gates associated with the second memory cells, and second conductive paths coupled to the second control gates. The second conductive paths include second conductive pads located on a second level of the apparatus. The first and second conductive pads having lengths in a direction perpendicular to a direction from the first deck to the second deck.

公开(公告)号：US20230043786A1

公开(公告)日：2023-02-09

申请号：US17966594

申请日：2022-10-14

申请人： Micron Technology, Inc.

发明人： Darwin A. Clampitt ,  Roger W. Lindsay ,  Christopher R. Ritchie ,  Shawn D. Lyonsmith ,  Matthew J. King ,  Lisa M. Clampitt

IPC分类号： H01L27/11582 ,  H01L23/528 ,  H01L23/522 ,  H01L27/11556 ,  H01L21/768 ,  H01L27/11565 ,  H01L21/311 ,  H01L21/02 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11575 ,  H01L27/11548 ,  G11C7/18

摘要： Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatus includes a first conductive contact; a second conductive contact; levels of conductive materials stacked over one another and located over the first and second conductive contacts; levels of dielectric materials interleaved with the levels of the conductive materials, the levels of conductive materials and the levels of dielectric materials formed a stack of materials; a first conductive structure located on a first side of the stack of materials and contacting the first conductive contact and a first level of conductive material of the levels of conductive materials; and a second conductive structure located on a second side of the stack of materials and contacting the second conductive contact and a second level of conductive material of the levels of conductive materials.

公开(公告)号：US20210126007A1

公开(公告)日：2021-04-29

申请号：US16664280

申请日：2019-10-25

申请人： Micron Technology, Inc.

发明人： Darwin A. Clampitt ,  Roger W. Lindsay ,  Christopher R. Ritchie ,  Shawn D. Lyonsmith ,  Matthew J. King ,  Lisa M. Clampitt

IPC分类号： H01L27/11582 ,  H01L23/528 ,  H01L23/522 ,  H01L27/11556 ,  H01L21/768 ,  H01L21/311 ,  H01L21/02 ,  H01L27/11519 ,  H01L27/11565

摘要： Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatus includes a first conductive contact; a second conductive contact; levels of conductive materials stacked over one another and located over the first and second conductive contacts; levels of dielectric materials interleaved with the levels of the conductive materials, the levels of conductive materials and the levels of dielectric materials formed a stack of materials; a first conductive structure located on a first side of the stack of materials and contacting the first conductive contact and a first level of conductive material of the levels of conductive materials; and a second conductive structure located on a second side of the stack of materials and contacting the second conductive contact and a second level of conductive material of the levels of conductive materials.

公开(公告)号：US20240203804A1

公开(公告)日：2024-06-20

申请号：US18514563

申请日：2023-11-20

申请人： Micron Technology, Inc.

发明人： Darwin A. Clampitt ,  Roger W. Lindsay ,  Lisa M. Clampitt

IPC分类号： H01L23/13 ,  B28D5/00 ,  H01L21/18 ,  H01L21/304 ,  H01L23/14

CPC分类号： H01L23/13 ,  B28D5/0005 ,  H01L21/187 ,  H01L21/304 ,  H01L23/147 ,  H01L25/0657

摘要： A semiconductor device assembly is provided. The semiconductive device assembly includes a semiconductor die with a substrate having an engineered portion and a semiconductive portion. The engineered portion includes one or more of: a sintered material, a corrugated material, oriented strands of material compressed to form a solid structure, layers of material compressed to form a solid structure, or a material arranged to form one or more planar trusses. The semiconductive portion is adhered directly to the engineered portion. A layer of dielectric material is disposed at the semiconductive portion, and circuitry is disposed at the layer of dielectric material. In doing so, a cost-efficient and mechanically robust semiconductor device may be assembled.

公开(公告)号：US11508746B2

公开(公告)日：2022-11-22

申请号：US16664280

申请日：2019-10-25

申请人： Micron Technology, Inc.

发明人： Darwin A. Clampitt ,  Roger W. Lindsay ,  Christopher R. Ritchie ,  Shawn D. Lyonsmith ,  Matthew J. King ,  Lisa M. Clampitt

IPC分类号： H01L27/11582 ,  H01L23/528 ,  H01L23/522 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11575 ,  H01L27/11548 ,  G11C7/18 ,  H01L21/768 ,  H01L21/311 ,  H01L21/02

摘要： Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatus includes a first conductive contact; a second conductive contact; levels of conductive materials stacked over one another and located over the first and second conductive contacts; levels of dielectric materials interleaved with the levels of the conductive materials, the levels of conductive materials and the levels of dielectric materials formed a stack of materials; a first conductive structure located on a first side of the stack of materials and contacting the first conductive contact and a first level of conductive material of the levels of conductive materials; and a second conductive structure located on a second side of the stack of materials and contacting the second conductive contact and a second level of conductive material of the levels of conductive materials.

公开(公告)号：US20220068956A1

公开(公告)日：2022-03-03

申请号：US17008130

申请日：2020-08-31

申请人： Micron Technology, Inc.

发明人： Darwin A. Clampitt ,  Shawn D. Lyonsmith ,  Matthew J. King ,  Lisa M. Clampitt ,  John Hopkins ,  Kevin Y. Titus ,  Indra V. Chary ,  Martin Jared Barclay ,  Anilkumar Chandolu ,  Pavithra Natarajan ,  Roger W. Lindsay

IPC分类号： H01L27/11582 ,  H01L23/528 ,  H01L23/522 ,  H01L27/11565

摘要： Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a first deck located over a substrate, and a second deck located over the first deck, and pillars extending through the first and second decks. The first deck includes first memory cells, first control gates associated with the first memory cells, and first conductive paths coupled to the first control gates. The second conductive paths include second conductive pads located on a first level of the apparatus over the substrate. The second deck includes second memory cells, second control gates associated with the second memory cells, and second conductive paths coupled to the second control gates. The second conductive paths include second conductive pads located on a second level of the apparatus. The first and second conductive pads having lengths in a direction perpendicular to a direction from the first deck to the second deck.