Invention Grant
- Patent Title: Semiconductor device having capacitor and manufacturing method thereof
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Application No.: US17106409Application Date: 2020-11-30
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Publication No.: US11532694B2Publication Date: 2022-12-20
- Inventor: Meng-Han Lin , Te-Hsin Chiu , Wei Cheng Wu , Te-An Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L21/8234 ; H01L27/06 ; H01L27/08 ; H01L23/64 ; H01L29/92 ; H01L21/28 ; H01L21/3115 ; H01L21/3215 ; H01L21/768
Abstract:
A semiconductor device and a manufacturing method thereof are provided. The semiconductor device has a substrate having an isolation structure therein and a capacitor structure located on an upper top surface of the isolation structure. The capacitor structure comprises a first semiconductor structure and a second semiconductor structure respectively disposed on the upper surface of the isolation structure and separated by an insulator pattern.
Public/Granted literature
- US20210083042A1 SEMICONDUCTOR DEVICE HAVING CAPACITOR AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-03-18
Information query
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