- 专利标题： EUV photolithography system fuel source and methods of operating the same
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申请号： US17494558申请日： 2021-10-05
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公开(公告)号： US11809083B2公开(公告)日： 2023-11-07
- 发明人: Cheng-Hao Lai , Ming-Hsun Tsai , Hsin-Feng Chen , Wei-Shin Cheng , Yu-Kuang Sun , Cheng-Hsuan Wu , Yu-Fa Lo , Shih-Yu Tu , Jou-Hsuan Lu , Shang-Chieh Chien , Li-Jui Chen , Heng-Hsin Liu
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Seed IP Law Group LLP
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; G03F7/00
摘要：
Impurities in a liquefied solid fuel utilized in a droplet generator of an extreme ultraviolet photolithography system are removed from vessels containing the liquefied solid fuel. Removal of the impurities increases the stability and predictability of droplet formation which positively impacts wafer yield and droplet generator lifetime.
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