公开(公告)号：US11528798B2

公开(公告)日：2022-12-13

申请号：US17338441

申请日：2021-06-03

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shih-Yu Tu ,  Han-Lung Chang ,  Hsiao-Lun Chang ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H05G2/00

Abstract: A method includes ejecting a metal droplet from a reservoir of a first droplet generator assembled to a vessel; emitting an excitation laser from a laser source to the metal droplet to generate extreme ultraviolet (EUV) radiation; turning off the first droplet generator; cooling down the first droplet generator to a temperature not lower than about 150° C.; dismantling the first droplet generator from the vessel at the temperature not lower than about 150° C.; and assembling a second droplet generator to the vessel.

公开(公告)号：US12085865B2

公开(公告)日：2024-09-10

申请号：US18324889

申请日：2023-05-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Yu Tu ,  Chieh Hsieh ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Heng-Hsin Liu

IPC: G03F7/00 ,  H05G2/00

CPC classification number: G03F7/7085 ,  G03F7/70033 ,  G03F7/70916 ,  G03F7/70925 ,  H05G2/005 ,  H05G2/008

Abstract: An extreme ultraviolet (EUV) photolithography system detects debris travelling from an EUV generation chamber to a scanner. The photolithography system includes a detection light source and a sensor. The detection light source outputs a detection light across a path of travel of debris particles from the EUV generation chamber. The sensor senses debris particles by detecting interaction of the debris particles with the detection light.

公开(公告)号：US11809083B2

公开(公告)日：2023-11-07

申请号：US17494558

申请日：2021-10-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Hao Lai ,  Ming-Hsun Tsai ,  Hsin-Feng Chen ,  Wei-Shin Cheng ,  Yu-Kuang Sun ,  Cheng-Hsuan Wu ,  Yu-Fa Lo ,  Shih-Yu Tu ,  Jou-Hsuan Lu ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Heng-Hsin Liu

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70033

Abstract: Impurities in a liquefied solid fuel utilized in a droplet generator of an extreme ultraviolet photolithography system are removed from vessels containing the liquefied solid fuel. Removal of the impurities increases the stability and predictability of droplet formation which positively impacts wafer yield and droplet generator lifetime.

公开(公告)号：US20210033986A1

公开(公告)日：2021-02-04

申请号：US16805836

申请日：2020-03-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Yu Tu ,  Po-Chung Cheng ,  Hsiao-Lun Chang ,  Li-Jui Chen ,  Han-Lung Chang

IPC: G03F7/20 ,  H05G2/00

Abstract: A droplet catcher system of an EUV lithography apparatus is provided. The droplet catcher system includes a catcher body, a heat transfer part, a heat exchanger, and a controller. The catcher body has an outer surface. The heat transfer part is directly attached to the outer surface of the catcher body. The heat exchanger is thermally coupled to the heat transfer part. The controller is electrically coupled to the heat exchanger.

公开(公告)号：US11693324B2

公开(公告)日：2023-07-04

申请号：US17484945

申请日：2021-09-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Yu Tu ,  Chieh Hsieh ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Heng-Hsin Liu

IPC: G03F7/20 ,  G03F7/00 ,  H05G2/00

CPC classification number: G03F7/7085 ,  G03F7/70033 ,  G03F7/70916 ,  G03F7/70925 ,  H05G2/005 ,  H05G2/008

Abstract: An extreme ultraviolet (EUV) photolithography system detects debris travelling from an EUV generation chamber to a scanner. The photolithography system includes a detection light source and a sensor. The detection light source outputs a detection light across a path of travel of debris particles from the EUV generation chamber. The sensor senses debris particles by detecting interaction of the debris particles with the detection light.

公开(公告)号：US11067906B2

公开(公告)日：2021-07-20

申请号：US16805836

申请日：2020-03-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Yu Tu ,  Po-Chung Cheng ,  Hsiao-Lun Chang ,  Li-Jui Chen ,  Han-Lung Chang

IPC: H05G2/00 ,  G03F7/20

Abstract: A droplet catcher system of an EUV lithography apparatus is provided. The droplet catcher system includes a catcher body, a heat transfer part, a heat exchanger, and a controller. The catcher body has an outer surface. The heat transfer part is directly attached to the outer surface of the catcher body. The heat exchanger is thermally coupled to the heat transfer part. The controller is electrically coupled to the heat exchanger.

公开(公告)号：US12235586B2

公开(公告)日：2025-02-25

申请号：US18366092

申请日：2023-08-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Hao Lai ,  Ming-Hsun Tsai ,  Hsin-Feng Chen ,  Wei-Shin Cheng ,  Yu-Kuang Sun ,  Cheng-Hsuan Wu ,  Yu-Fa Lo ,  Shih-Yu Tu ,  Jou-Hsuan Lu ,  Shang-Chieh Chien ,  Li-Jui Chen ,  Heng-Hsin Liu

IPC: G03F7/00

Abstract: Impurities in a liquefied solid fuel utilized in a droplet generator of an extreme ultraviolet photolithography system are removed from vessels containing the liquefied solid fuel. Removal of the impurities increases the stability and predictability of droplet formation which positively impacts wafer yield and droplet generator lifetime.

公开(公告)号：US11997778B2

公开(公告)日：2024-05-28

申请号：US18064156

申请日：2022-12-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shih-Yu Tu ,  Han-Lung Chang ,  Hsiao-Lun Chang ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H05G2/00

CPC classification number: H05G2/006 ,  H05G2/005 ,  H05G2/008

Abstract: A method includes following steps. A photoresist-coated substrate is received to an extreme ultraviolet (EUV) tool. An EUV radiation is directed from a radiation source onto the photoresist-coated substrate, wherein the EUV radiation is generated by an excitation laser hitting a plurality of target droplets ejected from a first droplet generator. The first droplet generator is replaced with a second droplet generator at a temperature not lower than about 150° C.

公开(公告)号：US11134558B2

公开(公告)日：2021-09-28

申请号：US16508596

申请日：2019-07-11

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shih-Yu Tu ,  Yu-Kuang Sun ,  Shao-Hua Wang ,  Han-Lung Chang ,  Hsiao-Lun Chang ,  Li-Jui Chen ,  Po-Chung Cheng ,  Cheng-Hao Lai ,  Hsin-Feng Chen ,  Wei-Shin Cheng ,  Ming-Hsun Tsai ,  Yen-Hsun Chen

IPC: H05G2/00

Abstract: A droplet generator assembly includes a storage tank, a refill system, a droplet generator, and a temperature control system. The storage tank is configured to store a target material. The refill system is connected to the storage tank. The droplet generator includes a reservoir and a nozzle connected to the reservoir, in which the droplet generator is connected to the refill system, and the refill system is configured to deliver the target material to the reservoir. The temperature control system is adjacent to the refill system or the reservoir.

公开(公告)号：US11032897B2

公开(公告)日：2021-06-08

申请号：US16548731

申请日：2019-08-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Shih-Yu Tu ,  Han-Lung Chang ,  Hsiao-Lun Chang ,  Li-Jui Chen ,  Po-Chung Cheng

IPC: H05G2/00

Abstract: A method includes ejecting a metal droplet from a reservoir of a droplet generator toward a zone of excitation in front of a collector, emitting an excitation laser toward the zone of excitation, such that the metal droplet is heated by the excitation laser to generate extreme ultraviolet (EUV) radiation, halting the emission of the excitation laser, depressurizing the reservoir of the droplet generator, cooling down the droplet generator to a temperature not lower than about 150° C., and refilling the reservoir of the droplet generator with a solid metal material at the temperature not lower than about 150° C.