发明申请
US20170073839A1 METHOD FOR PRODUCING GROUP-III NITRIDE CRYSTAL, GROUP-III NITRIDE CRYSTAL, SEMICONDUCTOR DEVICE, AND DEVICE FOR PRODUCING GROUP-III NITRIDE CRYSTAL
审中-公开
用于生产III族氮化物晶体，III族氮化物晶体，半导体器件和用于生产III族氮化物晶体的器件的方法
- 专利标题： METHOD FOR PRODUCING GROUP-III NITRIDE CRYSTAL, GROUP-III NITRIDE CRYSTAL, SEMICONDUCTOR DEVICE, AND DEVICE FOR PRODUCING GROUP-III NITRIDE CRYSTAL
- 专利标题（中）： 用于生产III族氮化物晶体，III族氮化物晶体，半导体器件和用于生产III族氮化物晶体的器件的方法
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申请号： US15123556申请日： 2015-02-26
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公开(公告)号： US20170073839A1公开(公告)日： 2017-03-16
- 发明人: Yusuke MORI , Masashi YOSHIMURA , Mamoru IMADE , Masashi ISEMURA , Akira USUI , Masatomo SHIBATA , Takehiro YOSHIDA
- 申请人： OSAKA UNIVERSITY , ITOCHU PLASTICS INC.
- 优先权： JP2014-041080 20140303
- 国际申请： PCT/JP2015/055716 WO 20150226
- 主分类号： C30B29/40
- IPC分类号： C30B29/40 ; C30B19/06 ; C30B25/18 ; C30B25/20 ; C30B33/00 ; B28D5/00 ; H01L21/78 ; H01L33/00 ; H01L33/12 ; H01L33/32 ; H01L29/20 ; C30B19/02 ; H01L21/02
摘要：
A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal 1003 by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal 1004 on the first crystal 1003 by vapor phase epitaxy. In the first Group III nitride crystal production process, the surfaces of seed crystals 1003a (preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystals 1003a to produce a first crystal 1003.
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