- 专利标题: SEMICONDUCTOR IMAGING DEVICE HAVING IMPROVED DARK CURRENT PERFORMANCE
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申请号: US17308332申请日: 2021-05-05
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公开(公告)号: US20210280620A1公开(公告)日: 2021-09-09
- 发明人: Seiji Takahashi , Chen-Jong Wang , Dun-Nian Yaung , Feng-Chi Hung , Feng-Jia Shiu , Jen-Cheng Liu , Jhy-Jyi Sze , Chun-Wei Chang , Wei-Cheng Hsu , Wei Chuang Wu , Yimin Huang
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 主分类号: H01L27/146
- IPC分类号: H01L27/146
摘要:
In some embodiments, a pixel sensor is provided. The pixel sensor includes a first photodetector arranged in a semiconductor substrate. A second photodetector is arranged in the semiconductor substrate, where a first substantially straight line axis intersects a center point of the first photodetector and a center point of the second photodetector. A floating diffusion node is arranged in the semiconductor substrate at a point that is a substantially equal distance from the first photodetector and the second photodetector. A pick-up well contact region is arranged in the semiconductor substrate, where a second substantially straight line axis that is substantially perpendicular to the first substantially straight line axis intersects a center point of the floating diffusion node and a center point of the pick-up well contact region.
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