公开(公告)号：US11538837B2

公开(公告)日：2022-12-27

申请号：US17308332

申请日：2021-05-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Seiji Takahashi ,  Chen-Jong Wang ,  Dun-Nian Yaung ,  Feng-Chi Hung ,  Feng-Jia Shiu ,  Jen-Cheng Liu ,  Jhy-Jyi Sze ,  Chun-Wei Chang ,  Wei-Cheng Hsu ,  Wei Chuang Wu ,  Yimin Huang

IPC: H01L27/146

Abstract: In some embodiments, a pixel sensor is provided. The pixel sensor includes a first photodetector arranged in a semiconductor substrate. A second photodetector is arranged in the semiconductor substrate, where a first substantially straight line axis intersects a center point of the first photodetector and a center point of the second photodetector. A floating diffusion node is arranged in the semiconductor substrate at a point that is a substantially equal distance from the first photodetector and the second photodetector. A pick-up well contact region is arranged in the semiconductor substrate, where a second substantially straight line axis that is substantially perpendicular to the first substantially straight line axis intersects a center point of the floating diffusion node and a center point of the pick-up well contact region.

公开(公告)号：US11004880B2

公开(公告)日：2021-05-11

申请号：US17022456

申请日：2020-09-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Seiji Takahashi ,  Chen-Jong Wang ,  Dun-Nian Yaung ,  Feng-Chi Hung ,  Feng-Jia Shiu ,  Jen-Cheng Liu ,  Jhy-Jyi Sze ,  Chun-Wei Chang ,  Wei-Cheng Hsu ,  Wei Chuang Wu ,  Yimin Huang

IPC: H01L27/146

Abstract: In some embodiments, a pixel sensor is provided. The pixel sensor includes a first photodetector arranged in a semiconductor substrate. A second photodetector is arranged in the semiconductor substrate, where a first substantially straight line axis intersects a center point of the first photodetector and a center point of the second photodetector. A floating diffusion node is arranged in the semiconductor substrate at a point that is a substantially equal distance from the first photodetector and the second photodetector. A pick-up well contact region is arranged in the semiconductor substrate, where a second substantially straight line axis that is substantially perpendicular to the first substantially straight line axis intersects a center point of the floating diffusion node and a center point of the pick-up well contact region.

公开(公告)号：US10734436B2

公开(公告)日：2020-08-04

申请号：US16142681

申请日：2018-09-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Chao Chiu ,  Chih-Chien Wang ,  Feng-Jia Shiu ,  Ching-Sen Kuo ,  Chun-Wei Chang ,  Kai Tzeng

IPC: G03F7/38 ,  H01L27/146 ,  G03F7/40 ,  H01L21/768 ,  G03F7/16 ,  G03F7/32 ,  H01L21/027 ,  H01L21/266 ,  H01L21/311

Abstract: A first photoresist pattern and a second photoresist pattern are formed over a substrate. The first photoresist pattern is separated from the second photoresist pattern by a gap. A chemical mixture is coated on the first and second photoresist patterns. The chemical mixture contains a chemical material and surfactant particles mixed into the chemical material. The chemical mixture fills the gap. A baking process is performed on the first and second photoresist patterns, the baking process causing the gap to shrink. At least some surfactant particles are disposed at sidewall boundaries of the gap. A developing process is performed on the first and second photoresist patterns. The developing process removes the chemical mixture in the gap and over the photoresist patterns. The surfactant particles disposed at sidewall boundaries of the gap reduce a capillary effect during the developing process.

公开(公告)号：US09337103B2

公开(公告)日：2016-05-10

申请号：US13707769

申请日：2012-12-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-An Lin ,  Chun-Wei Chang ,  Neng-Kuo Chen ,  Sey-Ping Sun ,  Clement Hsingjen Wann

IPC: H01L21/3205 ,  H01L21/8234

CPC classification number: H01L21/823437

Abstract: A method includes forming a first gate above a semiconductor substrate, forming a hard mask on the first gate, and forming a contact etch stop layer (CESL) on the hard mask. No hard mask is removed between the step of forming the hard mask and the step of forming the CESL. The method further includes forming an interlayer dielectric (ILD) layer over the CESL, and performing one or more CMP processes to planarize the ILD layer, remove the CESL on the hard mask, and remove at least one portion of the hard mask.

Abstract translation: 一种方法包括在半导体衬底上形成第一栅极，在第一栅极上形成硬掩模，以及在硬掩模上形成接触蚀刻停止层（CESL）。 在形成硬掩模的步骤和形成CESL的步骤之间没有去除硬掩模。 该方法还包括在CESL上形成层间电介质层（ILD）层，以及执行一个或多个CMP工艺以使ILD层平坦化，去除硬掩模上的CESL，以及去除硬掩模的至少一部分。

公开(公告)号：US20220395953A1

公开(公告)日：2022-12-15

申请号：US17455116

申请日：2021-11-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wei Chang ,  Ming-Fa Chen ,  Chao-Wen Shih ,  Ting-Chu Ko

IPC: B24B7/22 ,  B24B37/04 ,  B24B37/08 ,  B24B49/12

Abstract: A method includes bonding a first package component on a composite carrier, and performing a first polishing process on the composite carrier to remove a base carrier of the composite carrier. The first polishing process stops on a first layer of the composite carrier. A second polishing process is performed to remove the first layer of the composite carrier. The second polishing process stops on a second layer of the composite carrier. A third polishing process is performed to remove a plurality of layers in the composite carrier. The plurality of layers include the second layer, and the third polishing process stops on a dielectric layer in the first package component.

公开(公告)号：US20210280620A1

公开(公告)日：2021-09-09

申请号：US17308332

申请日：2021-05-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Seiji Takahashi ,  Chen-Jong Wang ,  Dun-Nian Yaung ,  Feng-Chi Hung ,  Feng-Jia Shiu ,  Jen-Cheng Liu ,  Jhy-Jyi Sze ,  Chun-Wei Chang ,  Wei-Cheng Hsu ,  Wei Chuang Wu ,  Yimin Huang

IPC: H01L27/146

Abstract: In some embodiments, a pixel sensor is provided. The pixel sensor includes a first photodetector arranged in a semiconductor substrate. A second photodetector is arranged in the semiconductor substrate, where a first substantially straight line axis intersects a center point of the first photodetector and a center point of the second photodetector. A floating diffusion node is arranged in the semiconductor substrate at a point that is a substantially equal distance from the first photodetector and the second photodetector. A pick-up well contact region is arranged in the semiconductor substrate, where a second substantially straight line axis that is substantially perpendicular to the first substantially straight line axis intersects a center point of the floating diffusion node and a center point of the pick-up well contact region.

公开(公告)号：US11086221B2

公开(公告)日：2021-08-10

申请号：US16983523

申请日：2020-08-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Chao Chiu ,  Chih-Chien Wang ,  Feng-Jia Shiu ,  Ching-Sen Kuo ,  Chun-Wei Chang ,  Kai Tzeng

IPC: G03F7/16 ,  G03F7/38 ,  G03F7/40 ,  H01L21/768 ,  G03F7/26 ,  G03F7/32 ,  H01L21/027 ,  H01L21/266 ,  H01L21/311 ,  H01L27/146

Abstract: A first photoresist pattern and a second photoresist pattern are formed over a substrate. The first photoresist pattern is separated from the second photoresist pattern by a gap. A chemical mixture is coated on the first and second photoresist patterns. The chemical mixture contains a chemical material and surfactant particles mixed into the chemical material. The chemical mixture fills the gap. A baking process is performed on the first and second photoresist patterns, the baking process causing the gap to shrink. At least some surfactant particles are disposed at sidewall boundaries of the gap. A developing process is performed on the first and second photoresist patterns. The developing process removes the chemical mixture in the gap and over the photoresist patterns. The surfactant particles disposed at sidewall boundaries of the gap reduce a capillary effect during the developing process.

公开(公告)号：US10546889B2

公开(公告)日：2020-01-28

申请号：US16180390

申请日：2018-11-05

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wei-Chao Chiu ,  Chih-Chien Wang ,  Feng-Jia Shiu ,  Ching-Sen Kuo ,  Chun-Wei Chang ,  Kai Tzeng

IPC: H01L27/146

Abstract: Implementations of the disclosure provide a method of fabricating an image sensor device. The method includes forming first trenches in a first photoresist layer using a first photomask having a first pattern to expose a first surface of a substrate, directing ions into the exposed first substrate through the first trenches to form first isolation regions in the substrate, removing the first photoresist layer, forming second trenches in a second photoresist layer using a second photomask having a second pattern to expose a second surface of the substrate, the second pattern being shifted diagonally from the first pattern by half mask pitch, directing ions into the exposed second surface through the second trenches to form second isolation regions in the substrate, the first and second isolation regions being alternatingly disposed in the substrate, and the first and second isolation regions defining pixel regions therebetween, and removing the second photoresist layer.

公开(公告)号：US10090357B2

公开(公告)日：2018-10-02

申请号：US15062956

申请日：2016-03-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wei-Chao Chiu ,  Chih-Chien Wang ,  Feng-Jia Shiu ,  Ching-Sen Kuo ,  Chun-Wei Chang ,  Kai Tzeng

IPC: G03F7/38 ,  H01L27/146 ,  G03F7/16 ,  G03F7/32 ,  H01L21/027 ,  H01L21/266 ,  H01L21/311 ,  H01L21/768

Abstract: A first photoresist pattern and a second photoresist pattern are formed over a substrate. The first photoresist pattern is separated from the second photoresist pattern by a gap. A chemical mixture is coated on the first and second photoresist patterns. The chemical mixture contains a chemical material and surfactant particles mixed into the chemical material. The chemical mixture fills the gap. A baking process is performed on the first and second photoresist patterns, the baking process causing the gap to shrink. At least some surfactant particles are disposed at sidewall boundaries of the gap. A developing process is performed on the first and second photoresist patterns. The developing process removes the chemical mixture in the gap and over the photoresist patterns. The surfactant particles disposed at sidewall boundaries of the gap reduce a capillary effect during the developing process.

公开(公告)号：US20190027530A1

公开(公告)日：2019-01-24

申请号：US16142681

申请日：2018-09-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Chao Chiu ,  Chih-Chien Wang ,  Feng-Jia Shiu ,  Ching-Sen Kuo ,  Chun-Wei Chang ,  Kai Tzeng

IPC: H01L27/146 ,  H01L21/266 ,  H01L21/768 ,  G03F7/38 ,  H01L21/311 ,  H01L21/027 ,  G03F7/32 ,  G03F7/16 ,  G03F7/40

Abstract: A first photoresist pattern and a second photoresist pattern are formed over a substrate. The first photoresist pattern is separated from the second photoresist pattern by a gap. A chemical mixture is coated on the first and second photoresist patterns. The chemical mixture contains a chemical material and surfactant particles mixed into the chemical material. The chemical mixture fills the gap. A baking process is performed on the first and second photoresist patterns, the baking process causing the gap to shrink. At least some surfactant particles are disposed at sidewall boundaries of the gap. A developing process is performed on the first and second photoresist patterns. The developing process removes the chemical mixture in the gap and over the photoresist patterns. The surfactant particles disposed at sidewall boundaries of the gap reduce a capillary effect during the developing process.