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    LOW-NOISE IMAGE SENSOR HAVING STACKED SEMICONDUCTOR SUBSTRATES
    2.
    发明申请
    LOW-NOISE IMAGE SENSOR HAVING STACKED SEMICONDUCTOR SUBSTRATES 审中-公开

    公开(公告)号：US20200266229A1

    公开(公告)日：2020-08-20

    申请号：US16526030

    申请日：2019-07-30

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Seiji Takahashi ,  Jhy-Jyi Sze

    IPC分类号： H01L27/146

    摘要： Various embodiments of the present disclosure are directed towards an image sensor. The image sensor includes a first semiconductor substrate having a photodetector and a floating diffusion node. A transfer gate is disposed over the first semiconductor substrate, where the transfer gate is at least partially disposed between opposite sides of the photodetector. A second semiconductor substrate is vertically spaced from the first semiconductor substrate, where the second semiconductor substrate comprises a first surface and a second surface opposite the first surface. A readout transistor is disposed on the second semiconductor substrate, where the second surface is disposed between the transfer gate and a gate of the readout transistor. A first conductive contact is electrically coupled to the transfer gate and extending vertically from the transfer gate through both the first surface and the second surface.

    IMAGING DEVICE WITH UNIFORM PHOTOSENSITVIE REGION ARRAY
    5.
    发明申请
    IMAGING DEVICE WITH UNIFORM PHOTOSENSITVIE REGION ARRAY 审中-公开

    公开(公告)号：US20200135779A1

    公开(公告)日：2020-04-30

    申请号：US16364478

    申请日：2019-03-26

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Seiji Takahashi

    IPC分类号： H01L27/146 ,  H04N5/374

    摘要： Various embodiments of the present disclosure are directed towards a pixel sensor including a first and second pair of photodetectors. The pixel sensor includes the first and second pair of photodetectors in a semiconductor substrate. The first pair of photodetectors are reflection symmetric with respect to a first line positioned at a midpoint between the first pair of photodetectors. The second pair of photodetectors are reflection symmetric with respect to a second line that intersects the first line at a center point. A first plurality of transistors overlying the semiconductor substrate laterally offset the first pair of photodetectors. A second plurality of transistors overlying the semiconductor substrate laterally offset the first plurality of transistors. The first and second pair of photodetectors are laterally between the first and second plurality of transistors. The first and second plurality of transistors are point symmetric with respect to the center point.

    LOW NOISE VERTICAL GATE DEVICE STRUCTURE
    9.
    发明申请
    LOW NOISE VERTICAL GATE DEVICE STRUCTURE 审中-公开

    公开(公告)号：US20200266223A1

    公开(公告)日：2020-08-20

    申请号：US16547739

    申请日：2019-08-22

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Seiji Takahashi

    IPC分类号： H01L27/146

    摘要： Various embodiments of the present disclosure are directed towards an image sensor including a photodetector disposed in a semiconductor substrate. A floating diffusion node is disposed in the semiconductor substrate and is above the photodetector. A transfer gate electrode overlies the photodetector. The transfer gate electrode has a top conductive body overlying a top surface of the semiconductor substrate and a bottom conductive body extending from the top conductive body to below the floating diffusion node. A portion of the top conductive body directly overlies the floating diffusion node. A first sidewall of the top conductive body directly overlies the bottom conductive body.

    Imaging device with uniform photosensitive region array
    10.
    发明授权
    Imaging device with uniform photosensitive region array 有权

    公开(公告)号：US10734419B2

    公开(公告)日：2020-08-04

    申请号：US16364478

    申请日：2019-03-26

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Seiji Takahashi

    IPC分类号： H01L27/146 ,  H04N5/374

    摘要： Various embodiments of the present disclosure are directed towards a pixel sensor including a first and second pair of photodetectors. The pixel sensor includes the first and second pair of photodetectors in a semiconductor substrate. The first pair of photodetectors are reflection symmetric with respect to a first line positioned at a midpoint between the first pair of photodetectors. The second pair of photodetectors are reflection symmetric with respect to a second line that intersects the first line at a center point. A first plurality of transistors overlying the semiconductor substrate laterally offset the first pair of photodetectors. A second plurality of transistors overlying the semiconductor substrate laterally offset the first plurality of transistors. The first and second pair of photodetectors are laterally between the first and second plurality of transistors. The first and second plurality of transistors are point symmetric with respect to the center point.