- 专利标题： SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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申请号： US18638883申请日： 2024-04-18
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公开(公告)号： US20240290881A1公开(公告)日： 2024-08-29
- 发明人: Yasuhiro OKAMOTO , Nobuo MACHIDA , Koichi ARAI , Kenichi HISADA , Yasunori YAMASHITA , Satoshi EGUCHI , Hironobu MIYAMOTO , Atsushi SAKAI , Katsumi EIKYU
- 申请人： RENESAS ELECTRONICS CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP 18012427 2018.01.29
- 分案原申请号： US18057330 2022.11.21
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/02 ; H01L21/027 ; H01L21/04 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L29/16 ; H01L29/36 ; H01L29/423 ; H01L29/45 ; H01L29/49 ; H01L29/66
摘要：
A drift layer is formed over a semiconductor substrate which is an SiC substrate. The drift layer includes first to third n-type semiconductor layers and a p-type impurity region. Herein, an impurity concentration of the second n-type semiconductor layer is higher than an impurity concentration of the first n-type semiconductor layer and an impurity concentration of the third n-type semiconductor layer. Also, in plan view, the second semiconductor layer located between the p-type impurity regions adjacent to each other overlaps with at least a part of a gate electrode formed in a trench.
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