Technologies for a field effect transistor (FET) with a ferroelectric gate dielectric are disclosed. In an illustrative embodiment, a transistor includes a gate of strontium ruthenate and a ferroelectric gate dielectric layer of barium titanate. In order to prevent migration of ruthenium from the strontium ruthenate to the barium titanate, a barrier layer is placed between the gate and the ferroelectric gate dielectric layer. The barrier layer may be a metal oxide, such as strontium oxide, barium oxide, zirconium oxide, etc.