发明授权
- 专利标题： Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same
- 专利标题（中）： 使用酰胺前体形成栅介质薄膜的CVD试剂组合物及其使用方法
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申请号： US09954831申请日： 2001-09-18
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公开(公告)号： US06869638B2公开(公告)日： 2005-03-22
- 发明人: Thomas H. Baum , Chongying Xu , Bryan C. Hendrix , Jeffrey F. Roeder
- 申请人： Thomas H. Baum , Chongying Xu , Bryan C. Hendrix , Jeffrey F. Roeder
- 申请人地址： US CT Danbury
- 专利权人： Advanced Tehnology Materials, Inc.
- 当前专利权人： Advanced Tehnology Materials, Inc.
- 当前专利权人地址： US CT Danbury
- 代理商 Margaret Chappuis; Steven Hultquist, Esq.
- 主分类号： C23C16/40
- IPC分类号： C23C16/40 ; C07F7/00 ; C23C14/08 ; H01L21/28 ; H01L21/316 ; H01L29/51 ; B05D5/12 ; C23C16/00 ; H01L21/31 ; C07F7/28
摘要：
A CVD Method of forming gate dielectric thin films on a substrate using metalloamide compounds of the formula M(NR1R2)x, or wherein M is Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, or Al; N is nitrogen; each of R1 and R2 is same or different and is independently selected from H, aryl, perfluoroaryl, C1-C8 alkyl, C1-C8 perfluoroalkyl, alkylsilyl; and x is the oxidation state on metal M; and an aminosilane compound of the formula HxSiAy(NR1R2)4-x-y or wherein H is hydrogen; x is from 0 to 3; Si is silicon; A is a halogen; Y is from 0 to 3; N is nitrogen; each of R1 and R2 is same or different and is independently selected from the group consisting of H, aryl, perfluoroaryl, C1-C8 alkyl, and C1-C8 perfluoroalkyl; and n is from 1-6. By comparison with the standard SiO2 gate dielectric materials, these gate dielectric materials provide low levels of carbon and halide impurity.
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