发明授权
US06939815B2 Method for making a semiconductor device having a high-k gate dielectric
失效
制造具有高k栅极电介质的半导体器件的方法
- 专利标题： Method for making a semiconductor device having a high-k gate dielectric
- 专利标题（中）： 制造具有高k栅极电介质的半导体器件的方法
-
申请号： US10652796申请日： 2003-08-28
-
公开(公告)号： US06939815B2公开(公告)日： 2005-09-06
- 发明人: Justin K. Brask , Mark L. Doczy , Scott A. Hareland , John P. Barnak , Matthew V. Metz , Jack Kavalieros , Robert S. Chau
- 申请人： Justin K. Brask , Mark L. Doczy , Scott A. Hareland , John P. Barnak , Matthew V. Metz , Jack Kavalieros , Robert S. Chau
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely, Sokoloff, Taylor and Zafman
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/30 ; H01L21/306 ; H01L21/316 ; H01L29/51 ; H01L21/31
摘要：
A method for making a semiconductor device is described. That method comprises forming a metal oxide layer on a substrate, converting at least part of the metal oxide layer to a metal layer; and oxidizing the metal layer to generate a metal oxide high-k gate dielectric layer.
公开/授权文献
信息查询
IPC分类:
