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    Method for making a semiconductor device having a high-k gate dielectric
    4.
    发明授权
    Method for making a semiconductor device having a high-k gate dielectric 有权
    制造具有高k栅极电介质的半导体器件的方法

    公开(公告)号：US06806146B1

    公开(公告)日：2004-10-19

    申请号：US10441616

    申请日：2003-05-20

    申请人： Justin K. Brask ,  Mark L. Doczy ,  John P. Barnak ,  Ying Zhou

    发明人： Justin K. Brask ,  Mark L. Doczy ,  John P. Barnak ,  Ying Zhou

    IPC分类号： H01L21336

    CPC分类号： H01L21/28194 ,  H01L21/28238 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  Y10S438/976

    摘要： A method for making a semiconductor device is described. That method comprises forming on a substrate a high-k gate dielectric layer that includes impurities, then forming a silicon containing sacrificial layer on the high-k gate dielectric layer. After the silicon containing sacrificial layer has gettered the impurities from the high-k gate dielectric layer, the silicon containing sacrificial layer is removed, and a gate electrode is formed on the high-k gate dielectric layer. The method optionally includes exposing the high-k gate dielectric layer to a silicic acid containing solution until a silicon dioxide capping layer forms on the high-k gate dielectric layer, prior to forming a gate electrode on the capping layer.

    摘要翻译： 描述制造半导体器件的方法。 该方法包括在衬底上形成包含杂质的高k栅极电介质层，然后在高k栅极电介质层上形成含硅牺牲层。 在含硅牺牲层从高k栅介质层吸收杂质之后，去除含硅牺牲层，并在高k栅介质层上形成栅电极。 该方法可选地包括在形成覆盖层上的栅极电极之前，将高k栅极电介质层暴露于含硅酸溶液，直到在高k栅极电介质层上形成二氧化硅覆盖层。

    Method for making a semiconductor device having a high-k gate dielectric
    5.
    发明授权
    Method for making a semiconductor device having a high-k gate dielectric 失效
    制造具有高k栅极电介质的半导体器件的方法

    公开(公告)号：US06867102B2

    公开(公告)日：2005-03-15

    申请号：US10840964

    申请日：2004-05-07

    申请人： Justin K. Brask ,  Mark L. Doczy ,  John P. Barnak ,  Ying Zhou

    发明人： Justin K. Brask ,  Mark L. Doczy ,  John P. Barnak ,  Ying Zhou

    IPC分类号： H01L21/28 ,  H01L29/49 ,  H01L29/51 ,  H01L21/336

    CPC分类号： H01L21/28194 ,  H01L21/28238 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  Y10S438/976

    摘要： A method for making a semiconductor device is described. That method comprises forming on a substrate a high-k gate dielectric layer that includes impurities, then forming a silicon containing sacrificial layer on the high-k gate dielectric layer. After the silicon containing sacrificial layer has gettered the impurities from the high-k gate dielectric layer, the silicon containing sacrificial layer is removed, and a gate electrode is formed on the high-k gate dielectric layer. The method optionally includes exposing the high-k gate dielectric layer to a silicic acid containing solution until a silicon dioxide capping layer forms on the high-k gate dielectric layer, prior to forming a gate electrode on the capping layer.

    摘要翻译： 描述制造半导体器件的方法。 该方法包括在衬底上形成包含杂质的高k栅极电介质层，然后在高k栅极电介质层上形成含硅牺牲层。 在含硅牺牲层从高k栅介质层吸收杂质之后，去除含硅牺牲层，并在高k栅介质层上形成栅电极。 该方法可选地包括在形成覆盖层上的栅极电极之前，将高k栅极电介质层暴露于含硅酸溶液，直到在高k栅极电介质层上形成二氧化硅覆盖层。

    Method for making a semiconductor device having a high-k gate dielectric
    6.
    发明授权
    Method for making a semiconductor device having a high-k gate dielectric 有权
    制造具有高k栅极电介质的半导体器件的方法

    公开(公告)号：US06709911B1

    公开(公告)日：2004-03-23

    申请号：US10338174

    申请日：2003-01-07

    申请人： Mark L. Doczy ,  Justin K. Brask ,  John P. Barnak

    发明人： Mark L. Doczy ,  Justin K. Brask ,  John P. Barnak

    IPC分类号： H01L218234

    CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28238 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

    摘要： A method for making a semiconductor device is described. That method comprises forming a nitride based sacrificial layer on a high-k gate dielectric layer to transfer nitrogen from the nitride based sacrificial layer to the high-k gate dielectric layer to form a nitridized high-k gate dielectric layer. The remaining sacrificial layer is then removed from the nitridized high-k gate dielectric layer using a wet etch process that comprises exposing the remaining sacrificial layer to a solution that contains a non-metallic hydroxide. A gate electrode is then formed on the nitridized high-k gate dielectric layer.

    摘要翻译： 描述制造半导体器件的方法。 该方法包括在高k栅极电介质层上形成氮化物基牺牲层，以将氮从氮化物基牺牲层转移到高k栅极电介质层，以形成氮化的高k栅极电介质层。 然后使用湿蚀刻工艺从氮化的高k栅极电介质层中除去剩余的牺牲层，其包括将剩余的牺牲层暴露于含有非金属氢氧化物的溶液。 然后在氮化的高k栅极电介质层上形成栅电极。