发明授权
- 专利标题： Opposed terminal structure having a nitride semiconductor element
- 专利标题（中）： 具有氮化物半导体元件的相对端子结构
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申请号： US10950472申请日： 2004-09-28
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公开(公告)号： US06946683B2公开(公告)日： 2005-09-20
- 发明人: Masahiko Sano , Mitsuhiro Nonaka , Kazumi Kamada , Masashi Yamamoto
- 申请人： Masahiko Sano , Mitsuhiro Nonaka , Kazumi Kamada , Masashi Yamamoto
- 申请人地址： JP Anan
- 专利权人： Nichia Corporation
- 当前专利权人： Nichia Corporation
- 当前专利权人地址： JP Anan
- 代理机构： Wenderoth, Lind & Ponack, L.L.P.
- 优先权： JP2002-19192 20020128; JP2002-175686 20020617; JP2002-195179 20020703; JP2002-233866 20020809; JP2002-356463 20021209
- 主分类号： H01L33/62
- IPC分类号： H01L33/62 ; H01L27/15 ; H01L29/16 ; H01L29/26 ; H01L33/00 ; H01L33/06 ; H01L33/10 ; H01L33/20 ; H01L33/22 ; H01L33/32 ; H01L33/38 ; H01L33/40 ; H01L33/44 ; H01S5/00 ; H01S5/02 ; H01S5/022 ; H01S5/024 ; H01S5/042 ; H01S5/183 ; H01S5/30 ; H01S5/343
摘要：
An opposed terminal structure including a supporting substrate, a first terminal, a nitride semiconductor with a light-emitting layer, and a second terminal. The second terminal forms an opposed terminal structure with the first terminal, which can be formed in a variety of patterns.