发明授权
- 专利标题: Process for producing indium oxide-containing layers
- 专利标题(中): 含有氧化铟的层的制造方法
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申请号: US13884495申请日: 2011-10-26
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公开(公告)号: US08859332B2公开(公告)日: 2014-10-14
- 发明人: Juergen Steiger , Duy Vu Pham , Heiko Thiem , Alexey Merkulov , Arne Hoppe
- 申请人: Juergen Steiger , Duy Vu Pham , Heiko Thiem , Alexey Merkulov , Arne Hoppe
- 申请人地址: DE Essen
- 专利权人: Evonik Degussa GmbH
- 当前专利权人: Evonik Degussa GmbH
- 当前专利权人地址: DE Essen
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: DE102010043668 20101110
- 国际申请: PCT/EP2011/068736 WO 20111026
- 国际公布: WO2012/062575 WO 20120518
- 主分类号: H01L21/16
- IPC分类号: H01L21/16 ; H01L29/10 ; H01L21/12 ; B05D5/12 ; H01L21/288 ; H01L29/22 ; C23C18/12 ; H01L21/02 ; H01L29/43
摘要:
The present invention relates to a liquid phase process for producing indium oxide-containing layers, in which a coating composition preparable from a mixture comprising at least one indium oxide precursor and at least one solvent and/or dispersion medium, in the sequence of points a) to d), a) is applied to a substrate, and b) the composition applied to the substrate is irradiated with electromagnetic radiation, c) optionally dried and d) converted thermally into an indium oxide-containing layer, where the indium oxide precursor is an indium halogen alkoxide of the generic formula InX(OR)2 where R is an alkyl radical and/or alkoxyalkyl radical and X is F, Cl, Br or I and the irradiation is carried out with electromagnetic radiation having significant fractions of radiation in the range of 170-210 nm and of 250-258 nm, to the indium oxide-containing layers producible with the process, and the use thereof.
公开/授权文献
- US20130221352A1 PROCESS FOR PRODUCING INDIUM OXIDE-CONTAINING LAYERS 公开/授权日:2013-08-29
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