发明授权
US08912610B2 Structure and method for MOSFETS with high-K and metal gate structure
有权
具有高K和金属栅极结构的MOSFET的结构和方法
- 专利标题： Structure and method for MOSFETS with high-K and metal gate structure
- 专利标题（中）： 具有高K和金属栅极结构的MOSFET的结构和方法
-
申请号： US13438451申请日： 2012-04-03
-
公开(公告)号： US08912610B2公开(公告)日： 2014-12-16
- 发明人: Jr Jung Lin , Yun-Ju Sun , Shih-Hsun Chang , Chia-Jen Chen , Tomonari Yamamoto , Chih-Wei Kuo , Meng-Yi Sun , Kuo-Chiang Ting
- 申请人： Jr Jung Lin , Yun-Ju Sun , Shih-Hsun Chang , Chia-Jen Chen , Tomonari Yamamoto , Chih-Wei Kuo , Meng-Yi Sun , Kuo-Chiang Ting
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boonem LLP
- 主分类号： H01L21/70
- IPC分类号： H01L21/70 ; H01L21/02 ; H01L29/66 ; H01L21/311 ; H01L29/423 ; H01L21/3213 ; H01L21/28 ; H01L29/78 ; H01L29/51
摘要：
The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductor substrate; and a gate stack disposed on the semiconductor substrate. The gate stack includes a high k dielectric material layer, a capping layer disposed on the high k dielectric material layer, and a metal layer disposed on the capping layer. The capping layer and the high k dielectric material layer have a footing structure.