Invention Grant
- Patent Title: Replacement low-K spacer
- Patent Title (中): 替换低K隔片
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Application No.: US14163687Application Date: 2014-01-24
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Publication No.: US09129987B2Publication Date: 2015-09-08
- Inventor: Jing Wan , Jin Ping Liu , Guillaume Bouche , Andy Wei , Lakshmanan H. Vanamurthy , Cuiqin Xu , Sridhar Kuchibhatla , Rama Kambhampati , Xiuyu Cai
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBAL FOUNDRIES, Inc.
- Current Assignee: GLOBAL FOUNDRIES, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/3105 ; H01L21/311 ; H01L21/28
Abstract:
A method includes providing a gate structure having a gate, a first spacer along at least one side of the gate and an interlayer dielectric on at least one of the gate and the first spacer. The interlayer dielectric is removed to reveal the first spacer. The first spacer is removed and a second spacer is deposited on at least one side of the gate. The second spacer is formed of material having a lower dielectric constant than the first spacer.
Public/Granted literature
- US20150214330A1 REPLACEMENT LOW-K SPACER Public/Granted day:2015-07-30
Information query
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