Invention Grant
- Patent Title: Decreased switching current in spin-transfer torque memory
- Patent Title (中): 自旋转移转矩存储器中的开关电流降低
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Application No.: US14431607Application Date: 2013-06-10
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Publication No.: US09214215B2Publication Date: 2015-12-15
- Inventor: Elijah V. Karpov , Brian S. Doyle , Kaan Oguz , Satyarth Suri , Robert S. Chau , Charles S. Kuo , Mark L. Doczy , David L. Kencke
- Applicant: Elijah V. Karpov , Brian S. Doyle , Kaan Oguz , Satyarth Suri , Robert S. Chau , Charles S. Kuo , Mark L. Doczy , David L. Kencke
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- International Application: PCT/US2013/045031 WO 20130610
- International Announcement: WO2014/051724 WO 20140403
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16 ; H01L43/02 ; H01L43/08 ; H01L27/22 ; G11C11/56
Abstract:
Switching current in Spin-Transfer Torque Memory (STTM) can be decreased. A magnetic memory cell is driven with a first pulse on a write line of the memory cell to heat the cell. The cell is then driven with a second pulse on the write line to set the state of the cell.
Public/Granted literature
- US20150243336A1 Decreased Switching Current in Spin-Transfer Torque Memory Public/Granted day:2015-08-27
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