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公开(公告)号：US09214215B2
公开(公告)日：2015-12-15
申请号：US14431607
申请日：2013-06-10
申请人： Elijah V. Karpov , Brian S. Doyle , Kaan Oguz , Satyarth Suri , Robert S. Chau , Charles S. Kuo , Mark L. Doczy , David L. Kencke
发明人： Elijah V. Karpov , Brian S. Doyle , Kaan Oguz , Satyarth Suri , Robert S. Chau , Charles S. Kuo , Mark L. Doczy , David L. Kencke
CPC分类号： G11C11/1675 , B82Y25/00 , G11C11/15 , G11C11/16 , G11C11/161 , G11C11/5607 , H01F10/3254 , H01L27/222 , H01L43/02 , H01L43/08
摘要： Switching current in Spin-Transfer Torque Memory (STTM) can be decreased. A magnetic memory cell is driven with a first pulse on a write line of the memory cell to heat the cell. The cell is then driven with a second pulse on the write line to set the state of the cell.
摘要翻译： 旋转转矩存储器（STTM）中的切换电流可以减小。 磁存储单元用存储单元的写入线上的第一个脉冲驱动，以加热单元。 然后在写入线上用第二个脉冲驱动单元以设置单元的状态。
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公开(公告)号：US08913422B2
公开(公告)日：2014-12-16
申请号：US13630896
申请日：2012-09-28
申请人： Elijah V. Karpov , Brian S. Doyle , Kaan Oguz , Satyarth Suri , Robert S. Chau , Charles C. Kuo , Mark L. Doczy , David L. Kencke
发明人： Elijah V. Karpov , Brian S. Doyle , Kaan Oguz , Satyarth Suri , Robert S. Chau , Charles C. Kuo , Mark L. Doczy , David L. Kencke
CPC分类号： G11C11/1675 , B82Y25/00 , G11C11/15 , G11C11/16 , G11C11/161 , G11C11/5607 , H01F10/3254 , H01L27/222 , H01L43/02 , H01L43/08
摘要： Switching current in Spin-Transfer Torque Memory (STTM) can be decreased. A magnetic memory cell is driven with a first pulse on a write line of the memory cell to heat the cell. The cell is then driven with a second pulse on the write line to set the state of the cell.
摘要翻译： 旋转转矩存储器（STTM）中的切换电流可以减小。 磁存储单元用存储单元的写入线上的第一个脉冲驱动，以加热单元。 然后在写入线上用第二个脉冲驱动单元以设置单元的状态。
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公开(公告)号：US20150243336A1
公开(公告)日：2015-08-27
申请号：US14431607
申请日：2013-06-10
申请人： Elijah V. KARPOV , Brian S. DOYLE , Kaan OGUZ , Satyarth SURI , Robert S. CHAU , Charles C. KUO , Mark L. DOCZY , David L. KENCKE , INTEL CORPORATION
发明人： Elijah V. Karpov , Brian S. Doyle , Kaan Oguz , Satyarth Suri , Robert S. Chau , Charles S. Kuo , Mark L. Doczy , David L. Kencke
CPC分类号： G11C11/1675 , B82Y25/00 , G11C11/15 , G11C11/16 , G11C11/161 , G11C11/5607 , H01F10/3254 , H01L27/222 , H01L43/02 , H01L43/08
摘要： Switching current in Spin-Transfer Torque Memory (STTM) can be decreased. A magnetic memory cell is driven with a first pulse on a write line of the memory cell to heat the cell. The cell is then driven with a second pulse on the write line to set the state of the cell.
摘要翻译： 旋转转矩存储器（STTM）中的切换电流可以减小。 磁存储单元用存储单元的写入线上的第一个脉冲驱动，以加热单元。 然后在写入线上用第二个脉冲驱动单元以设置单元的状态。
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公开(公告)号：US20140092677A1
公开(公告)日：2014-04-03
申请号：US13630896
申请日：2012-09-28
申请人： Elijah V. Karpov , Brian S. Doyle , Kaan Oguz , Satyarth Suri , Robert S. Chau , Charles C. Kuo , Mark L. Doczy
发明人： Elijah V. Karpov , Brian S. Doyle , Kaan Oguz , Satyarth Suri , Robert S. Chau , Charles C. Kuo , Mark L. Doczy
IPC分类号： G11C11/16
CPC分类号： G11C11/1675 , B82Y25/00 , G11C11/15 , G11C11/16 , G11C11/161 , G11C11/5607 , H01F10/3254 , H01L27/222 , H01L43/02 , H01L43/08
摘要： Switching current in Spin-Transfer Torque Memory (STTM) can be decreased. A magnetic memory cell is driven with a first pulse on a write line of the memory cell to heat the cell. The cell is then driven with a second pulse on the write line to set the state of the cell.
摘要翻译： 旋转转矩存储器（STTM）中的切换电流可以减小。 磁存储单元用存储单元的写入线上的第一个脉冲驱动，以加热单元。 然后在写入线上用第二个脉冲驱动单元以设置单元的状态。
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5.发明申请Perpendicular Spin Transfer Torque Memory (STTM) Device with Coupled Free Magnetic Layers 审中-公开具有耦合自由磁性层的垂直自旋转移转矩存储器（STTM）装置公开(公告)号：US20150091110A1
公开(公告)日：2015-04-02
申请号：US14039668
申请日：2013-09-27
申请人： Charles C. Kuo , Kaan Oguz , Mark L. Doczy , Brian S. Doyle , Satyarth Suri , Robert S. Chau , David L. Kencke , Roksana Golizadeh Mojarad , Anurag Chaudhry
发明人： Charles C. Kuo , Kaan Oguz , Mark L. Doczy , Brian S. Doyle , Satyarth Suri , Robert S. Chau , David L. Kencke , Roksana Golizadeh Mojarad , Anurag Chaudhry
CPC分类号： H01L43/10 , G11C11/161 , G11C29/028 , G11C29/56008 , G11C29/56012 , H01F10/3254 , H01F10/3286 , H01F10/329 , H01L43/08
摘要： Perpendicular spin transfer torque memory (STTM) devices with enhanced stability and damping are described. For example, a material layer stack for a magnetic tunneling junction includes a fixed magnetic layer. A dielectric layer is disposed above the fixed magnetic layer. A first free magnetic layer is disposed above the dielectric layer. A second free magnetic layer is magnetically coupled with the first free magnetic layer.
摘要翻译： 描述了具有增强的稳定性和阻尼的垂直自旋转移转矩存储器（STTM）装置。 例如，用于磁隧道结的材料层堆叠包括固定磁性层。 电介质层设置在固定磁性层的上方。 第一自由磁性层设置在电介质层的上方。 第二自由磁性层与第一自由磁性层磁耦合。
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6.发明申请PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (STTM) DEVICE HAVING OFFSET CELLS AND METHOD TO FORM SAME 有权具有偏心电极的PERPENDICULAR SPIN TRANSFER TORQUE MEMORY（STTM）装置及其形成方法公开(公告)号：US20140329337A1
公开(公告)日：2014-11-06
申请号：US14333180
申请日：2014-07-16
申请人： Brian S. Doyle , David L. Kencke , Charles C. Kuo , Uday Shah , Kaan Oguz , Mark L. Doczy , Satyarth Suri , Clair Webb
发明人： Brian S. Doyle , David L. Kencke , Charles C. Kuo , Uday Shah , Kaan Oguz , Mark L. Doczy , Satyarth Suri , Clair Webb
IPC分类号： H01L43/12
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1659 , H01L27/222 , H01L27/228 , H01L29/66007 , H01L29/82 , H01L43/02 , H01L43/08 , H01L43/10
摘要： Perpendicular spin transfer torque memory (STTM) devices having offset cells and methods of fabricating perpendicular STTM devices having offset cells are described. For example, a spin torque transfer memory (STTM) array includes a first load line disposed above a substrate and having only a first STTM device. The STTM array also includes a second load line disposed above the substrate, adjacent the first load line, and having only a second STTM device, the second STTM device non-co-planar with the first STTM device.
摘要翻译： 描述具有偏移单元的垂直自旋转移转矩存储器（STTM）器件和制造具有偏置单元的垂直STTM器件的方法。 例如，自旋转矩传递存储器（STTM）阵列包括设置在衬底上方并且仅具有第一STTM器件的第一负载线。 STTM阵列还包括设置在基板上方的第二负载线，与第一负载线相邻，并且仅具有第二STTM器件，与第一STTM器件非共面的第二STTM器件。
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7.发明申请PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (STTM) DEVICE HAVING OFFSET CELLS AND METHOD TO FORM SAME 审中-公开具有偏心电极的PERPENDICULAR SPIN TRANSFER TORQUE MEMORY（STTM）装置及其形成方法公开(公告)号：US20150333252A1
公开(公告)日：2015-11-19
申请号：US14812655
申请日：2015-07-29
申请人： Brian S. Doyle , David L. Kencke , Charles C. Kuo , Uday Shah , Kaan Oguz , Mark L. Doczy , Satyarth Suri , Clair Webb
发明人： Brian S. Doyle , David L. Kencke , Charles C. Kuo , Uday Shah , Kaan Oguz , Mark L. Doczy , Satyarth Suri , Clair Webb
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1659 , H01L27/222 , H01L27/228 , H01L29/66007 , H01L29/82 , H01L43/02 , H01L43/08 , H01L43/10
摘要： Perpendicular spin transfer torque memory (STTM) devices having offset cells and methods of fabricating perpendicular STTM devices having offset cells are described. For example, a spin torque transfer memory (STTM) array includes a first load line disposed above a substrate and having only a first STTM device. The STTM array also includes a second load line disposed above the substrate, adjacent the first load line, and having only a second STTM device, the second STTM device non-co-planar with the first STTM device.
摘要翻译： 描述具有偏移单元的垂直自旋转移转矩存储器（STTM）器件和制造具有偏置单元的垂直STTM器件的方法。 例如，自旋转矩传递存储器（STTM）阵列包括设置在衬底上方并且仅具有第一STTM器件的第一负载线。 STTM阵列还包括设置在基板上方的第二负载线，与第一负载线相邻，并且仅具有第二STTM器件，与第一STTM器件非共面的第二STTM器件。
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8.发明授权Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form same 有权具有偏移单元的垂直自旋转移转矩存储器（STTM）器件及其形成方法公开(公告)号：US09105839B2
公开(公告)日：2015-08-11
申请号：US14333180
申请日：2014-07-16
申请人： Brian S. Doyle , David L. Kencke , Charles C. Kuo , Uday Shah , Kaan Oguz , Mark L. Doczy , Satyarth Suri , Clair Webb
发明人： Brian S. Doyle , David L. Kencke , Charles C. Kuo , Uday Shah , Kaan Oguz , Mark L. Doczy , Satyarth Suri , Clair Webb
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1659 , H01L27/222 , H01L27/228 , H01L29/66007 , H01L29/82 , H01L43/02 , H01L43/08 , H01L43/10
摘要： Perpendicular spin transfer torque memory (STTM) devices having offset cells and methods of fabricating perpendicular STTM devices having offset cells are described. For example, a spin torque transfer memory (STTM) array includes a first load line disposed above a substrate and having only a first STTM device. The STTM array also includes a second load line disposed above the substrate, adjacent the first load line, and having only a second STTM device, the second STTM device non-co-planar with the first STTM device.
摘要翻译： 描述具有偏移单元的垂直自旋转移转矩存储器（STTM）器件和制造具有偏置单元的垂直STTM器件的方法。 例如，自旋转矩传递存储器（STTM）阵列包括设置在衬底上方并且仅具有第一STTM器件的第一负载线。 STTM阵列还包括设置在基板上方的第二负载线，与第一负载线相邻，并且仅具有第二STTM器件，与第一STTM器件非共面的第二STTM器件。
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9.发明授权Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form same 有权具有偏移单元的垂直自旋转移转矩存储器（STTM）器件及其形成方法公开(公告)号：US08786040B2
公开(公告)日：2014-07-22
申请号：US13723866
申请日：2012-12-21
申请人： Brian S. Doyle , David L. Kencke , Charles C. Kuo , Uday Shah , Kaan Oguz , Mark L. Doczy , Satyarth Suri , Clair Webb
发明人： Brian S. Doyle , David L. Kencke , Charles C. Kuo , Uday Shah , Kaan Oguz , Mark L. Doczy , Satyarth Suri , Clair Webb
IPC分类号： H01L27/22
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1659 , H01L27/222 , H01L27/228 , H01L29/66007 , H01L29/82 , H01L43/02 , H01L43/08 , H01L43/10
摘要： Perpendicular spin transfer torque memory (STTM) devices having offset cells and methods of fabricating perpendicular STTM devices having offset cells are described. For example, a spin torque transfer memory (STTM) array includes a first load line disposed above a substrate and having only a first STTM device. The STTM array also includes a second load line disposed above the substrate, adjacent the first load line, and having only a second STTM device, the second STTM device non-co-planar with the first STTM device.
摘要翻译： 描述具有偏移单元的垂直自旋转移转矩存储器（STTM）器件和制造具有偏置单元的垂直STTM器件的方法。 例如，自旋转矩传递存储器（STTM）阵列包括设置在衬底上方并且仅具有第一STTM器件的第一负载线。 STTM阵列还包括设置在基板上方的第二负载线，与第一负载线相邻，并且仅具有第二STTM器件，与第一STTM器件非共面的第二STTM器件。
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10.发明申请公开(公告)号：US20140175583A1
公开(公告)日：2014-06-26
申请号：US13723866
申请日：2012-12-21
申请人： Brian S. Doyle , David L. Kencke , Charles C. Kuo , Uday Shah , Kaan Oguz , Mark L. Doczy , Satyarth Suri , Clair Webb
发明人： Brian S. Doyle , David L. Kencke , Charles C. Kuo , Uday Shah , Kaan Oguz , Mark L. Doczy , Satyarth Suri , Clair Webb
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1659 , H01L27/222 , H01L27/228 , H01L29/66007 , H01L29/82 , H01L43/02 , H01L43/08 , H01L43/10
摘要： Perpendicular spin transfer torque memory (STTM) devices having offset cells and methods of fabricating perpendicular STTM devices having offset cells are described. For example, a spin torque transfer memory (STTM) array includes a first load line disposed above a substrate and having only a first STTM device. The STTM array also includes a second load line disposed above the substrate, adjacent the first load line, and having only a second STTM device, the second STTM device non-co-planar with the first STTM device.
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