发明授权
- 专利标题： Process for the electrochemical deposition of a semiconductor material
- 专利标题（中）： 半导体材料的电化学沉积工艺
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申请号： US14392013申请日： 2013-07-24
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公开(公告)号： US09322108B2公开(公告)日： 2016-04-26
- 发明人: Gillian Reid , Philip Nigel Bartlett , Andrew Lee Hector
- 申请人： University of Southampton
- 申请人地址： GB Southampton
- 专利权人： University of Southampton
- 当前专利权人： University of Southampton
- 当前专利权人地址： GB Southampton
- 代理机构： Iandiorio Teska & Coleman, LLP
- 优先权： GB1213589.3 20120727
- 国际申请： PCT/GB2013/000322 WO 20130724
- 国际公布： WO2014/016544 WO 20140130
- 主分类号： C25D3/00
- IPC分类号： C25D3/00 ; C25D3/02 ; C25D7/12 ; H01L45/00 ; C25D5/02 ; C25D3/34 ; C25D3/32 ; C25D3/30 ; C25D3/26 ; C25D3/36 ; C25D3/60 ; H01L21/02 ; C25D3/44 ; C25D3/54 ; C25D3/56 ; C25D5/18 ; C25D9/08
摘要：
A process for the electrochemical deposition of a semiconductor material, which process comprises: (i) providing a non-aqueous solvent; (ii) providing at least one precursor salt which forms a source of the constituent elements within the semiconductor material to be deposited; and (iii) electrodepositing the semiconductor material onto an electrode substrate using the precursor salt in the non-aqueous solvent, characterized in that: (iv) the semiconductor material is a p-block or a post-transition metal semiconductor material containing at least one p-block element or post-transition metal; and (v) the non-aqueous solvent is a halocarbon non-aqueous solvent.