Invention Grant
- Patent Title: Process for the electrochemical deposition of a semiconductor material
- Patent Title (中): 半导体材料的电化学沉积工艺
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Application No.: US14392013Application Date: 2013-07-24
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Publication No.: US09322108B2Publication Date: 2016-04-26
- Inventor: Gillian Reid , Philip Nigel Bartlett , Andrew Lee Hector
- Applicant: University of Southampton
- Applicant Address: GB Southampton
- Assignee: University of Southampton
- Current Assignee: University of Southampton
- Current Assignee Address: GB Southampton
- Agency: Iandiorio Teska & Coleman, LLP
- Priority: GB1213589.3 20120727
- International Application: PCT/GB2013/000322 WO 20130724
- International Announcement: WO2014/016544 WO 20140130
- Main IPC: C25D3/00
- IPC: C25D3/00 ; C25D3/02 ; C25D7/12 ; H01L45/00 ; C25D5/02 ; C25D3/34 ; C25D3/32 ; C25D3/30 ; C25D3/26 ; C25D3/36 ; C25D3/60 ; H01L21/02 ; C25D3/44 ; C25D3/54 ; C25D3/56 ; C25D5/18 ; C25D9/08

Abstract:
A process for the electrochemical deposition of a semiconductor material, which process comprises: (i) providing a non-aqueous solvent; (ii) providing at least one precursor salt which forms a source of the constituent elements within the semiconductor material to be deposited; and (iii) electrodepositing the semiconductor material onto an electrode substrate using the precursor salt in the non-aqueous solvent, characterized in that: (iv) the semiconductor material is a p-block or a post-transition metal semiconductor material containing at least one p-block element or post-transition metal; and (v) the non-aqueous solvent is a halocarbon non-aqueous solvent.
Public/Granted literature
- US20150329983A1 PROCESS FOR THE ELECTROCHEMICAL DEPOSITION OF A SEMICONDUCTOR MATERIAL Public/Granted day:2015-11-19
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