Invention Grant
- Patent Title: Power savings via selection of SRAM power source
- Patent Title (中): 通过选择SRAM电源节约能源
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Application No.: US14711712Application Date: 2015-05-13
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Publication No.: US09484115B1Publication Date: 2016-11-01
- Inventor: Stephen Felix , Hwong-Kwo Lin , Spencer Gold , Jing Guo , Andreas Gotterba , Jason Golbus , Karthik Natarajan , Jun Yang , Zhenye Jiang , Ge Yang , Lei Wang , Yong Li , Hua Chen , Haiyan Gong , Beibei Ren , Eric Voelkel
- Applicant: NVIDIA CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: NVIDIA Corporation
- Current Assignee: NVIDIA Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Artegis Law Group, LLP
- Main IPC: G11C29/08
- IPC: G11C29/08 ; G11C11/16 ; G11C7/00 ; G11C5/14

Abstract:
A subsystem configured to select the power supply to a static random access memory cell compares the level of a dedicated memory supply voltage to the primary system supply voltage. The subsystem then switches the primary system supply to the SRAM cell when the system voltage is higher than the memory supply voltage with some margin. When the system voltage is lower than the memory supply voltage, with margin, the subsystem switches the memory supply to the SRAM cell. When the system voltage is comparable to the memory supply, the subsystem switches the system voltage to the SRAM cell if performance is a prioritized consideration, but switches the memory supply to the SRAM cell if power reduction is a prioritized consideration. In this manner, the system achieves optimum performance without incurring steady state power losses and avoids timing issues in accessing memory.
Public/Granted literature
- US20160336054A1 POWER SAVINGS VIA SELECTION OF SRAM POWER SOURCE Public/Granted day:2016-11-17
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