公开(公告)号：US09484115B1

公开(公告)日：2016-11-01

申请号：US14711712

申请日：2015-05-13

Applicant: NVIDIA CORPORATION

Inventor： Stephen Felix ,  Hwong-Kwo Lin ,  Spencer Gold ,  Jing Guo ,  Andreas Gotterba ,  Jason Golbus ,  Karthik Natarajan ,  Jun Yang ,  Zhenye Jiang ,  Ge Yang ,  Lei Wang ,  Yong Li ,  Hua Chen ,  Haiyan Gong ,  Beibei Ren ,  Eric Voelkel

IPC: G11C29/08 ,  G11C11/16 ,  G11C7/00 ,  G11C5/14

CPC classification number: G11C11/1697 ,  G11C5/143 ,  G11C7/00 ,  G11C11/417 ,  G11C29/08 ,  G11C2207/2227

Abstract: A subsystem configured to select the power supply to a static random access memory cell compares the level of a dedicated memory supply voltage to the primary system supply voltage. The subsystem then switches the primary system supply to the SRAM cell when the system voltage is higher than the memory supply voltage with some margin. When the system voltage is lower than the memory supply voltage, with margin, the subsystem switches the memory supply to the SRAM cell. When the system voltage is comparable to the memory supply, the subsystem switches the system voltage to the SRAM cell if performance is a prioritized consideration, but switches the memory supply to the SRAM cell if power reduction is a prioritized consideration. In this manner, the system achieves optimum performance without incurring steady state power losses and avoids timing issues in accessing memory.

Abstract translation: 被配置为选择对静态随机存取存储器单元的电源的子系统将专用存储器电源电压的电平与主系统电源电压进行比较。 当系统电压高于具有一定余量的存储器电源电压时，子系统将主系统电源切换到SRAM单元。 当系统电压低于存储器电源电压时，子系统将存储器电源切换到SRAM单元。 当系统电压与存储器电源相当时，如果性能是优先考虑的话，子系统将系统电压切换到SRAM单元，但如果降低功耗是优先考虑的话，将存储器电源切换到SRAM单元。 以这种方式，系统实现最佳性能而不会导致稳态功率损耗，并避免访问存储器时的定时问题。

公开(公告)号：US09595827B2

公开(公告)日：2017-03-14

申请号：US14065181

申请日：2013-10-28

Applicant: NVIDIA CORPORATION

Inventor： Spencer Montgomery Gold ,  Karthik Natarajan

IPC: H02H3/08 ,  H02H9/02 ,  H02H9/04 ,  H02H9/00 ,  G06F1/26

CPC classification number: H02H9/04 ,  G06F1/26 ,  H02H9/002

Abstract: A subsystem is configured to apply a voltage source to a gated circuit domain in a manner that limits in-rush current and affords minimal time delay. A control signal turns on a wake-up switch that connects the voltage source to the domain. The equivalent series resistance of the wake-up switch has a magnitude that limits the transient charge current to the gated domain. A digital control circuit monitors the resulting rising domain voltage and determines when the domain voltage reaches operating level, at which point additional transient current will be minimal. The control circuit then activates a primary switch that connects the voltage source to the domain through a series resistance of negligible magnitude. An adjustment element provides the option to permanently set a control signal that marginally reduces the time at which the control circuit activates the primary switch to compensate for variations in circuit parameters.

Abstract translation: 子系统被配置为以限制浪涌电流并且提供最小时间延迟的方式将电压源施加到门控电路域。 控制信号打开将电压源连接到域的唤醒开关。 唤醒开关的等效串联电阻具有限制到门控域的瞬态充电电流的幅度。 数字控制电路监测产生的上升域电压，并确定域电压何时达到工作电平，此时额外的瞬态电流将最小。 然后，控制电路启动通过可忽略大小的串联电阻将电压源连接到该域的初级开关。 调整元件提供永久设置控制信号的选项，其稍微减小控制电路激活主开关的时间，以补偿电路参数的变化。