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公开(公告)号:US09484115B1
公开(公告)日:2016-11-01
申请号:US14711712
申请日:2015-05-13
申请人: NVIDIA CORPORATION
发明人: Stephen Felix , Hwong-Kwo Lin , Spencer Gold , Jing Guo , Andreas Gotterba , Jason Golbus , Karthik Natarajan , Jun Yang , Zhenye Jiang , Ge Yang , Lei Wang , Yong Li , Hua Chen , Haiyan Gong , Beibei Ren , Eric Voelkel
CPC分类号: G11C11/1697 , G11C5/143 , G11C7/00 , G11C11/417 , G11C29/08 , G11C2207/2227
摘要: A subsystem configured to select the power supply to a static random access memory cell compares the level of a dedicated memory supply voltage to the primary system supply voltage. The subsystem then switches the primary system supply to the SRAM cell when the system voltage is higher than the memory supply voltage with some margin. When the system voltage is lower than the memory supply voltage, with margin, the subsystem switches the memory supply to the SRAM cell. When the system voltage is comparable to the memory supply, the subsystem switches the system voltage to the SRAM cell if performance is a prioritized consideration, but switches the memory supply to the SRAM cell if power reduction is a prioritized consideration. In this manner, the system achieves optimum performance without incurring steady state power losses and avoids timing issues in accessing memory.
摘要翻译: 被配置为选择对静态随机存取存储器单元的电源的子系统将专用存储器电源电压的电平与主系统电源电压进行比较。 当系统电压高于具有一定余量的存储器电源电压时,子系统将主系统电源切换到SRAM单元。 当系统电压低于存储器电源电压时,子系统将存储器电源切换到SRAM单元。 当系统电压与存储器电源相当时,如果性能是优先考虑的话,子系统将系统电压切换到SRAM单元,但如果降低功耗是优先考虑的话,将存储器电源切换到SRAM单元。 以这种方式,系统实现最佳性能而不会导致稳态功率损耗,并避免访问存储器时的定时问题。