Invention Grant
- Patent Title: Method of manufacturing a semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US14874295Application Date: 2015-10-02
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Publication No.: US09583502B2Publication Date: 2017-02-28
- Inventor: Hiroshi Nishikizawa , Takuro Homma , Hiraku Chakihara , Mitsuhiro Noguchi
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2013-040046 20130228
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L21/8246 ; H01L21/28 ; H01L29/51 ; H01L29/45 ; H01L29/423 ; H01L27/115 ; H01L29/66 ; H01L29/792 ; H01L21/265 ; H01L21/283 ; H01L21/311 ; H01L21/32 ; H01L21/3205 ; H01L21/3213 ; H01L21/768 ; H01L29/49
Abstract:
After forming a first film over the main surface of a semiconductor substrate, the first film is patterned, thereby forming a control gate electrode for a non-volatile memory, a dummy gate electrode, and a first film pattern. Subsequently, a memory gate electrode for the non-volatile memory adjacent to the control gate electrode is formed. Then, the first film pattern is patterned thereby forming a gate electrode and a dummy gate electrode.
Public/Granted literature
- US20160027794A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2016-01-28
Information query
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