Invention Grant
- Patent Title: Flash memory and method of manufacturing the same
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Application No.: US14462550Application Date: 2014-08-18
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Publication No.: US09660106B2Publication Date: 2017-05-23
- Inventor: Weichang Liu , Zhen Chen , Shen-De Wang , Wei Ta , Yi-Shan Chiu , Yuan-Hsiang Chang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: CN Hsin-Chu, Taiwan
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: CN Hsin-Chu, Taiwan
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L29/66 ; H01L29/423 ; H01L29/51 ; H01L29/49 ; H01L21/28 ; H01L27/11573 ; H01L21/311
Abstract:
A flash memory structure includes a memory gate on a substrate, a select gate adjacent to the memory gate, and an oxide-nitride spacer between the memory gate and the select gate, where the oxide-nitride spacer further includes an oxide layer and a nitride layer having an upper nitride portion and a lower nitride portion, and the upper nitride portion is thinner than the lower nitride portion.
Public/Granted literature
- US20160049525A1 FLASH MEMORY AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-02-18
Information query
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