- 专利标题: Method of improving getter efficiency by increasing superficial area
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申请号: US14967663申请日: 2015-12-14
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公开(公告)号: US09708179B2公开(公告)日: 2017-07-18
- 发明人: Yuan-Chih Hsieh , Li-Cheng Chu , Hung-Hua Lin , Chih-Jen Chan , Lan-Lin Chao
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Eschweiler & Potashnik, LLC
- 主分类号: H01L23/12
- IPC分类号: H01L23/12 ; B81B7/00 ; B81C1/00 ; H01L23/26 ; H01L21/322
摘要:
In some embodiments, the present disclosure relates to a MEMs (microelectromechanical system) package device having a getter layer. The MEMs package includes a first substrate having a cavity located within an upper surface of the first substrate. The cavity has roughened interior surfaces. A getter layer is arranged onto the roughened interior surfaces of the cavity. A bonding layer is arranged on the upper surface of the first substrate on opposing sides of the cavity, and a second substrate bonded to the first substrate by the bonding layer. The second substrate is arranged over the cavity. The roughened interior surfaces of the cavity enables more effective absorption of residual gases, thereby increasing the efficiency of a gettering process.
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