公开(公告)号：US09708179B2

公开(公告)日：2017-07-18

申请号：US14967663

申请日：2015-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yuan-Chih Hsieh ,  Li-Cheng Chu ,  Hung-Hua Lin ,  Chih-Jen Chan ,  Lan-Lin Chao

IPC: H01L23/12 ,  B81B7/00 ,  B81C1/00 ,  H01L23/26 ,  H01L21/322

CPC classification number: B81B7/0038 ,  B81B7/0025 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0315 ,  B81C1/00285 ,  B81C2203/0118 ,  H01L21/3223 ,  H01L23/26 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In some embodiments, the present disclosure relates to a MEMs (microelectromechanical system) package device having a getter layer. The MEMs package includes a first substrate having a cavity located within an upper surface of the first substrate. The cavity has roughened interior surfaces. A getter layer is arranged onto the roughened interior surfaces of the cavity. A bonding layer is arranged on the upper surface of the first substrate on opposing sides of the cavity, and a second substrate bonded to the first substrate by the bonding layer. The second substrate is arranged over the cavity. The roughened interior surfaces of the cavity enables more effective absorption of residual gases, thereby increasing the efficiency of a gettering process.

公开(公告)号：US20160101976A1

公开(公告)日：2016-04-14

申请号：US14967663

申请日：2015-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yuan-Chih Hsieh ,  Li-Cheng Chu ,  Hung-Hua Lin ,  Chih-Jen Chan ,  Lan-Lin Chao

IPC: B81B7/00

CPC classification number: B81B7/0038 ,  B81B7/0025 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0315 ,  B81C1/00285 ,  B81C2203/0118 ,  H01L21/3223 ,  H01L23/26 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In some embodiments, the present disclosure relates to a MEMs (micro-electromechanical system) package device having a getter layer. The MEMs package includes a first substrate having a cavity located within an upper surface of the first substrate. The cavity has roughened interior surfaces. A getter layer is arranged onto the roughened interior surfaces of the cavity. A bonding layer is arranged on the upper surface of the first substrate on opposing sides of the cavity, and a second substrate bonded to the first substrate by the bonding layer. The second substrate is arranged over the cavity. The roughened interior surfaces of the cavity enables more effective absorption of residual gases, thereby increasing the efficiency of a gettering process.

Abstract translation: 在一些实施例中，本公开涉及具有吸气剂层的MEM（微机电系统）包装装置。 MEM包装包括具有位于第一衬底的上表面内的空腔的第一衬底。 腔内表面粗糙。 吸气剂层布置在空腔的粗糙化的内表面上。 在空腔的相对侧的第一基板的上表面上配置有接合层，通过接合层与第一基板接合的第二基板。 第二基板布置在空腔上方。 空腔的粗糙化的内表面能够更有效地吸收残留气体，从而提高吸气过程的效率。

公开(公告)号：US09242853B2

公开(公告)日：2016-01-26

申请号：US14053751

申请日：2013-10-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yuan-Chih Hsieh ,  Li-Cheng Chu ,  Hung-Hua Lin ,  Chih-Jen Chan ,  Lan-Lin Chao

IPC: H01L23/31 ,  B81C1/00 ,  H01L23/26 ,  H01L21/322 ,  B81B7/00

CPC classification number: B81B7/0038 ,  B81B7/0025 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0315 ,  B81C1/00285 ,  B81C2203/0118 ,  H01L21/3223 ,  H01L23/26 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present disclosure relates to a method of gettering that provides for a high efficiency gettering process by depositing a gettering material on a roughened substrate surface, and an associated apparatus. In some embodiments, the method is performed by providing a substrate into a processing chamber having residual gases. One or more cavities are formed in the substrate at locations between bonding areas on a top surface of the substrate. Respective cavities have roughened interior surfaces that vary in a plurality of directions. A getter layer is deposited into the one or more cavities. The roughened interior surfaces of the one or more cavities enable the substrate to more effectively absorb the residual gases, thereby increasing the efficiency of the gettering process.

Abstract translation: 本公开涉及一种吸气方法，其通过在粗糙化的基底表面上沉积吸气材料和相关联的装置来提供高效吸气过程。 在一些实施例中，通过将衬底提供到具有残留气体的处理室中来执行该方法。 在衬底的顶部表面上的结合区域之间的位置处形成一个或多个空腔。 相应的空腔具有在多个方向上变化的内表面的粗糙化。 吸气剂层沉积到一个或多个空腔中。 一个或多个空腔的粗糙化的内表面使得基底能够更有效地吸收残余气体，从而提高吸气过程的效率。