Invention Grant
- Patent Title: Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions
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Application No.: US15288349Application Date: 2016-10-07
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Publication No.: US09934972B2Publication Date: 2018-04-03
- Inventor: Thomas Aichinger , Wolfgang Bergner , Romain Esteve , Daniel Kueck , Dethard Peters , Victorina Poenariu , Gerald Reinwald , Roland Rupp , Gerald Unegg
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Priority: DE102015117286 20151009
- Main IPC: H01L21/04
- IPC: H01L21/04 ; H01L21/02 ; H01L21/265 ; H01L29/78 ; H01L29/66 ; H01L29/16 ; H01L29/10 ; H01L29/40 ; H01L29/861 ; H01L29/06 ; H01L21/3065 ; H01L29/423
Abstract:
A trench is formed that extends from a main surface into a crystalline silicon carbide semiconductor layer. A mask is formed that includes a mask opening exposing the trench and a rim section of the main surface around the trench. By irradiation with a particle beam a first portion of the semiconductor layer exposed by the mask opening and a second portion outside of the vertical projection of the mask opening and directly adjoining to the first portion are amorphized. A vertical extension of the amorphized second portion gradually decreases with increasing distance to the first portion. The amorphized first and second portions are removed.
Public/Granted literature
- US20170103894A1 Method of Manufacturing a Silicon Carbide Semiconductor Device by Removing Amorphized Portions Public/Granted day:2017-04-13
Information query
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