公开(公告)号：US09934972B2

公开(公告)日：2018-04-03

申请号：US15288349

申请日：2016-10-07

Applicant: Infineon Technologies AG

Inventor： Thomas Aichinger ,  Wolfgang Bergner ,  Romain Esteve ,  Daniel Kueck ,  Dethard Peters ,  Victorina Poenariu ,  Gerald Reinwald ,  Roland Rupp ,  Gerald Unegg

IPC: H01L21/04 ,  H01L21/02 ,  H01L21/265 ,  H01L29/78 ,  H01L29/66 ,  H01L29/16 ,  H01L29/10 ,  H01L29/40 ,  H01L29/861 ,  H01L29/06 ,  H01L21/3065 ,  H01L29/423

CPC classification number: H01L21/0475 ,  H01L21/049 ,  H01L21/3065 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/401 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/66068 ,  H01L29/7813 ,  H01L29/8613

Abstract: A trench is formed that extends from a main surface into a crystalline silicon carbide semiconductor layer. A mask is formed that includes a mask opening exposing the trench and a rim section of the main surface around the trench. By irradiation with a particle beam a first portion of the semiconductor layer exposed by the mask opening and a second portion outside of the vertical projection of the mask opening and directly adjoining to the first portion are amorphized. A vertical extension of the amorphized second portion gradually decreases with increasing distance to the first portion. The amorphized first and second portions are removed.

公开(公告)号：US20170103894A1

公开(公告)日：2017-04-13

申请号：US15288349

申请日：2016-10-07

Applicant: Infineon Technologies AG

Inventor： Thomas Aichinger ,  Wolfgang Bergner ,  Romain Esteve ,  Daniel Kueck ,  Dethard Peters ,  Victorina Poenariu ,  Gerald Reinwald ,  Roland Rupp ,  Gerald Unegg

IPC: H01L21/04 ,  H01L29/66 ,  H01L29/10 ,  H01L29/16 ,  H01L29/78

CPC classification number: H01L21/0475 ,  H01L21/049 ,  H01L21/3065 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/401 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/66068 ,  H01L29/7813 ,  H01L29/8613

Abstract: A trench is formed that extends from a main surface into a crystalline silicon carbide semiconductor layer. A mask is formed that includes a mask opening exposing the trench and a rim section of the main surface around the trench. By irradiation with a particle beam a first portion of the semiconductor layer exposed by the mask opening and a second portion outside of the vertical projection of the mask opening and directly adjoining to the first portion are amorphized. A vertical extension of the amorphized second portion gradually decreases with increasing distance to the first portion. The amorphized first and second portions are removed.

公开(公告)号：US10217636B2

公开(公告)日：2019-02-26

申请号：US15919918

申请日：2018-03-13

Applicant: Infineon Technologies AG

Inventor： Thomas Aichinger ,  Victorina Poenariu ,  Wolfgang Bergner ,  Romain Esteve ,  Daniel Kueck ,  Dethard Peters ,  Gerald Reinwald ,  Roland Rupp ,  Gerald Unegg

IPC: H01L29/16 ,  H01L29/66 ,  H01L21/02 ,  H01L21/04 ,  H01L29/10 ,  H01L29/78 ,  H01L29/40 ,  H01L29/861 ,  H01L29/06 ,  H01L21/3065 ,  H01L29/423

Abstract: A trench is formed that extends from a main surface into a crystalline silicon carbide semiconductor layer. A mask is formed that includes a mask opening exposing the trench and a rim section of the main surface around the trench. By irradiation with a particle beam a first portion of the semiconductor layer exposed by the mask opening and a second portion outside of the vertical projection of the mask opening and directly adjoining to the first portion are amorphized. A vertical extension of the amorphized second portion gradually decreases with increasing distance to the first portion. The amorphized first and second portions are removed.

公开(公告)号：US20180204725A1

公开(公告)日：2018-07-19

申请号：US15919918

申请日：2018-03-13

Applicant: Infineon Technologies AG

Inventor： Thomas Aichinger ,  Victorina Poenariu ,  Wolfgang Bergner ,  Romain Esteve ,  Daniel Kueck ,  Dethard Peters ,  Gerald Reinwald ,  Roland Rupp ,  Gerald Unegg

IPC: H01L21/04 ,  H01L29/861 ,  H01L29/78 ,  H01L29/66 ,  H01L29/423 ,  H01L29/40 ,  H01L21/3065 ,  H01L29/16 ,  H01L29/10 ,  H01L29/06

CPC classification number: H01L21/0475 ,  H01L21/049 ,  H01L21/3065 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/401 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/66068 ,  H01L29/7813 ,  H01L29/8613

Abstract: A trench is formed that extends from a main surface into a crystalline silicon carbide semiconductor layer. A mask is formed that includes a mask opening exposing the trench and a rim section of the main surface around the trench. By irradiation with a particle beam a first portion of the semiconductor layer exposed by the mask opening and a second portion outside of the vertical projection of the mask opening and directly adjoining to the first portion are amorphized. A vertical extension of the amorphized second portion gradually decreases with increasing distance to the first portion. The amorphized first and second portions are removed.