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公开(公告)号：EP0367301A3
公开(公告)日：1990-05-16
申请号：EP89123184.7
申请日：1985-06-21
IPC分类号： H03K17/687 , H03K17/60 , H03K17/73
CPC分类号： H03K17/567
摘要： A semiconductor switching device of field-drive type includes a bipolar component having a pnp transistor portion (8) and a npn transistor portion (9), said pnp transistor portion (8) and said npn transistor portion (9) being connected to cause a positive feedback, and a n-channel MOS transistor (11) connected across an emitter electrode (n3) and a collector electrode (n2) of said npn transistor portion (9), wherein a p-channel MOS transistor (10) is connected across an emitter electrode (p1) and a connector electrode (p2) of the pnp transistor portion (8), and a control terminal of said n-channel MOS transistor (11) is electrically connected with a control terminal of said p-channel MOS transistor (10). Said device is operable to control the main drive section even in the floating state and to drive the main drive section by a small control current.
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公开(公告)号：EP0166390A2
公开(公告)日：1986-01-02
申请号：EP85107682.8
申请日：1985-06-21
IPC分类号： H03K17/687 , H03K17/60 , H03K17/73
CPC分类号： H03K17/567
摘要： A semiconductor switch circuit of field-drive type includes a bipolar components (8, 9) having a forward blocking and reverse blocking junctions, and unipolar components (10, 11) of one and another conductivity types connected across the bipolar component so as to short-circuit its forward blocking junction. The switch circuit operates to turn on or off in response to the voltage signal to the gate circuit which is isolated from the bipolar component, irrespective of the polarity of a voltage applied across the bipolar component.
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公开(公告)号：EP0166390B1
公开(公告)日：1991-08-28
申请号：EP85107682.8
申请日：1985-06-21
IPC分类号： H03K17/687 , H03K17/60 , H03K17/73
CPC分类号： H03K17/567
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公开(公告)号：EP0166390A3
公开(公告)日：1988-06-01
申请号：EP85107682
申请日：1985-06-21
IPC分类号： H03K17/687 , H03K17/60 , H03K17/73
CPC分类号： H03K17/567
摘要： A semiconductor switch circuit of field-drive type includes a bipolar components (8, 9) having a forward blocking and reverse blocking junctions, and unipolar components (10, 11) of one and another conductivity types connected across the bipolar component so as to short-circuit its forward blocking junction. The switch circuit operates to turn on or off in response to the voltage signal to the gate circuit which is isolated from the bipolar component, irrespective of the polarity of a voltage applied across the bipolar component.
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公开(公告)号：EP0367301A2
公开(公告)日：1990-05-09
申请号：EP89123184.7
申请日：1985-06-21
IPC分类号： H03K17/687 , H03K17/60 , H03K17/73
CPC分类号： H03K17/567
摘要： A semiconductor switching device of field-drive type includes a bipolar component having a pnp transistor portion (8) and a npn transistor portion (9), said pnp transistor portion (8) and said npn transistor portion (9) being connected to cause a positive feedback, and a n-channel MOS transistor (11) connected across an emitter electrode (n3) and a collector electrode (n2) of said npn transistor portion (9), wherein a p-channel MOS transistor (10) is connected across an emitter electrode (p1) and a connector electrode (p2) of the pnp transistor portion (8), and a control terminal of said n-channel MOS transistor (11) is electrically connected with a control terminal of said p-channel MOS transistor (10). Said device is operable to control the main drive section even in the floating state and to drive the main drive section by a small control current.
摘要翻译： 场驱动型的半导体开关器件包括具有pnp晶体管部分（8）和npn晶体管部分（9）的双极组件，所述pnp晶体管部分（8）和所述npn晶体管部分（9）被连接以使得 正反馈和连接在所述npn晶体管部分（9）的发射极（n3）和集电极（n2）之间的n沟道MOS晶体管（11），其中p沟道MOS晶体管（10）跨越 pnp晶体管部分（8）的发射极（p1）和连接器电极（p2），所述n沟道MOS晶体管（11）的控制端子与所述p沟道MOS晶体管的控制端子 （10）。 所述装置即使处于浮动状态也可操作以控制主驱动部分，并且通过较小的控制电流来驱动主驱动部分。
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6.发明授权A high breakdown voltage semiconductor device having a semi-insulating layer 失效一种半导体装置，包括半绝缘层的高击穿电压
公开(公告)号：EP0615291B1
公开(公告)日：1997-05-21
申请号：EP94301317.7
申请日：1994-02-24
申请人： HITACHI, LTD.
IPC分类号： H01L29/06
CPC分类号： H01L29/404 , H01L29/0626 , H01L29/408
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公开(公告)号：EP0077072A2
公开(公告)日：1983-04-20
申请号：EP82109430.7
申请日：1982-10-12
申请人： Hitachi, Ltd.
发明人： Sugawara, Yoshitaka
IPC分类号： H01L29/86
CPC分类号： H01L29/404 , H01L29/8605
摘要： A resistance element capable of withstanding a high voltage is formed through impurity diffusion in a single crystal island (1) of a semiconductor integrated circuit substrate. The resistance element includes a resistive region (2; 16) formed in an exposed surface of the single crystal island (1) and folded reciprocatively by at least one and a half turns in a planar zigzag-like pattern. The pitch at which the resistive region is folded is decreased as viewed in the direction in which extension of depletion layer formed within the single crystal island upon application of a voltage between two ends of the resistive region is decreased.
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8.发明公开Semiconductor integrated circuit device comprising a dielectric isolation structure 失效具有用于集成电路电介质隔离结构的半导体器件。
公开(公告)号：EP0596414A2
公开(公告)日：1994-05-11
申请号：EP93117515.2
申请日：1993-10-28
申请人： HITACHI, LTD.
IPC分类号： H01L21/76 , H01L21/74 , H01L29/06 , H01L21/762
CPC分类号： H01L29/7813 , H01L21/76297 , H01L27/0623 , H01L29/0611 , H01L29/1083 , H01L29/402 , H01L29/7824 , H01L29/8611 , H01L2924/0002 , H02P6/085 , H01L2924/00
摘要： A semiconductor integrated circuit has a multilayered supporter (2, 22, 23) and one or more semiconductor islands (1) being disposed on the supporter (2, 22, 23) and being insulated against it by an insulating film (21). Within the islands (1), circuit elements are formed. The circuit further comprises an auxiliary electrode (33) provided at the supporter (2, 22, 23).
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公开(公告)号：EP0036319B1
公开(公告)日：1983-12-14
申请号：EP81301084.0
申请日：1981-03-16
IPC分类号： H01L29/72
CPC分类号： H01L29/402 , H01L29/0821 , H01L29/41708 , H01L29/735
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公开(公告)号：EP0036319A1
公开(公告)日：1981-09-23
申请号：EP81301084.0
申请日：1981-03-16
IPC分类号： H01L29/72
CPC分类号： H01L29/402 , H01L29/0821 , H01L29/41708 , H01L29/735
摘要： A lateral transistor having a high breakdown voltage and operable with an improved current amplification factor and an improved cut-off frequency comprises in a semiconductor substrate (14) of one conductivity type, a base layer (16) of the one conductivity type and an emitter layer (11) of the other conductivity type formed in the base layer. A first collector layer (12) of the other conductivity type is formed in the one principal surface of the substrate apart from the base layer and a second collector layer (13) of the same conductivity type having an impurity concentration lower than that of the first collector layer is formed between the first collector layer and the base layer in contact with the latter layers. Emitter, base and collector electrodes (17,18,19) make ohmic contact with the emitter, base and first collector layers respectively. The emitter electrode extends on a passivation film (15) covering the one principal surface of the substrate to terminate at a point on the second collector layer.
摘要翻译： 具有高击穿电压并可用改进的电流放大因子和改善的截止频率操作的横向晶体管包括在一种导电类型的半导体衬底（14）中的一种导电类型的基极层（16）和发射极 在基层中形成的另一种导电类型的层（11）。 另一种导电类型的第一集电极层（12）形成在基底的一个主表面中，除了基底层和具有相同导电类型的第二集电极层（13），其杂质浓度低于第一集电极层 集电极层形成在第一集电极层和与后一层接触的基极层之间。 发射极，基极和集电极（17,18,19）分别与发射极，基极和第一集电极层进行欧姆接触。 发射极电极在覆盖基板的一个主表面的钝化膜（15）上延伸，以终止于第二集电极层上的一点。
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