公开(公告)号：EP0837508A3

公开(公告)日：1999-01-20

申请号：EP97308267.0

申请日：1997-10-17

申请人： HITACHI, LTD.

发明人： Mori, Mutsuhiro ,  Uchino, Yoshihiro ,  Sakurai, Naoki ,  Kobayashi, Hideo ,  Sakano, Junichi

IPC分类号： H01L29/739

CPC分类号： H01L29/7398 ,  H01L29/0626 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/42368 ,  H01L29/7393 ,  H01L29/7395 ,  H01L29/7397

摘要： In the IGBT having at least a p+n-pn+ structure from the collector to the emitter, the n layer with higher density than the n- layer is formed between the n- layer and the p layer. The n layer is a barrier for holes, and as the holes are stored in the n- layer, ON voltage is reduced.

摘要翻译： 在从集电极到发射极的至少具有p + n-pn +结构的IGBT中，在n层和p层之间形成比n层高的n层。 n层是空穴的阻挡层，并且当孔存储在n层中时，导通电压降低。

公开(公告)号：EP0596414A2

公开(公告)日：1994-05-11

申请号：EP93117515.2

申请日：1993-10-28

申请人： HITACHI, LTD.

发明人： Sakurai, Naoki ,  Sugawara, Yoshitaka

IPC分类号： H01L21/76 ,  H01L21/74 ,  H01L29/06 ,  H01L21/762

CPC分类号： H01L29/7813 ,  H01L21/76297 ,  H01L27/0623 ,  H01L29/0611 ,  H01L29/1083 ,  H01L29/402 ,  H01L29/7824 ,  H01L29/8611 ,  H01L2924/0002 ,  H02P6/085 ,  H01L2924/00

摘要： A semiconductor integrated circuit has a multilayered supporter (2, 22, 23) and one or more semiconductor islands (1) being disposed on the supporter (2, 22, 23) and being insulated against it by an insulating film (21). Within the islands (1), circuit elements are formed. The circuit further comprises an auxiliary electrode (33) provided at the supporter (2, 22, 23).

公开(公告)号：EP0450306A1

公开(公告)日：1991-10-09

申请号：EP91102925.4

申请日：1991-02-27

申请人： HITACHI, LTD. ,  HITACHI HARAMACHI SEMI-CONDUCTOR LTD.

发明人： Mori, Mutsuhiro ,  Yasuda, Yasumiti ,  Sakurai, Naoki ,  Arakawa, Hidetoshi ,  Owada, Hiroshi

IPC分类号： H01L29/872

CPC分类号： H02M7/487 ,  H01L24/03 ,  H01L24/05 ,  H01L24/48 ,  H01L25/072 ,  H01L29/7806 ,  H01L29/872 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05558 ,  H01L2224/05624 ,  H01L2224/4847 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01074 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H03K17/08148 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2224/85399

摘要： In a semiconductor device a first diode having a pn junction and a second diode having a combination of a Schottky barrier and a pn junction in a current-passing direction are provided side by side in a direction perpendicular to the current-passing direction. When a forward current with a current density J F is passed into the second diodes, the relation
is established in a forward voltage V F range of 0.1 (V) to 0.3 (V). The first diode is constituted by first and second semiconductor regions (13, 15) forming a pn junction therebetween, the second being in ohmic contact with one main electrode (3), and having an impurity concentration higher than that of the first semiconductor region (13). The second diode is constituted by first and third semiconductor regions (13, 16) forming a pn junction therebetween, the third being in contact through a Schottky barrier with the one main electrode (3) and having an impurity concentration higher than the first semiconductor region (13).

摘要翻译： 在半导体器件中，沿与电流通过方向垂直的方向并排地设置具有pn结的第一二极管和具有通流方向的肖特基势垒和pn结的组合的第二二极管。 当具有电流密度JF的正向电流被传送到第二二极管时，在0.1（V）至0.3（V）的正向电压VF范围内建立关系$。\; 第一二极管由在其间形成pn结的第一和第二半导体区域（13,15）构成，第二二极管与一个主电极（3）欧姆接触，并且具有高于第一半导体区域的杂质浓度\; 13）。\; 第二二极管由在其间形成pn结的第一和第三半导体区域（13,16）构成，第三二极管通过肖特基势垒与一个主电极（3）接触并具有比第一半导体区域高的杂质浓度\; （13）。\mathop{\mathrm{image}}$

公开(公告)号：EP0840379A2

公开(公告)日：1998-05-06

申请号：EP97121574.4

申请日：1995-02-15

申请人： Hitachi, Ltd.

发明人： Hanaoka, Koumei ,  Sakurai, Naoki ,  Mori, Mutsuhiro

IPC分类号： H01L29/739

CPC分类号： H01L29/7395 ,  H01L25/072 ,  H01L29/861 ,  H01L2224/48091 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/30107 ,  H02J7/0029 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present invention provides a semiconductor device comprising, at least a pair of an insulated gate bipolar transistor, and a diode, both of which are in a reverse parallel connection with each other, wherein the resistivity of the base layer of the lowest impurity concentration in the diode is lower than that of the base layer of the lowest impurity concentration in the insulated gate bipolar transistor, and wherein a breakdown voltage of said insulated gate bipolar transistor at the time of switching from conduction state to blocking state is lower than a breakdown voltage of said insulated gate bipolar transistor and said diode at the time of blocking state.

摘要翻译： 本发明提供了一种半导体器件，包括至少一对绝缘栅双极晶体管和二极管，它们都彼此反向并联连接，其中基极层（13）的电阻率最低 二极管中的杂质浓度低于绝缘栅双极晶体管中最低杂质浓度的基底层（13）的杂质浓度，并且其中在从导通状态切换到阻断状态时所述绝缘栅双极晶体管的击穿电压 低于阻塞状态时所述绝缘栅双极晶体管和所述二极管的击穿电压。

公开(公告)号：EP0372391B1

公开(公告)日：1996-07-03

申请号：EP89122086.5

申请日：1989-11-30

申请人： HITACHI, LTD.

发明人： Sakurai, Naoki ,  Mori, Mutsuhiro ,  Tanaka, Tomoyuki

IPC分类号： H01L29/739

CPC分类号： H01L29/7398 ,  H01L29/7393 ,  H01L29/7394

公开(公告)号：EP0483744A3

公开(公告)日：1993-03-17

申请号：EP91118397.8

申请日：1991-10-29

申请人： HITACHI, LTD.

发明人： Miyazaki, Hideki ,  Watanabe, Kouzou ,  Onda, Kenichi ,  Tanaka, Tomoyuki ,  Sakurai, Naoki ,  Mori, Mutsuhiro

IPC分类号： H02M7/537 ,  H02H3/087 ,  G01R19/165 ,  H03K17/08

CPC分类号： G01R19/16571 ,  G01R19/16595 ,  G01R19/175 ,  H02M3/1563 ,  H02M7/53875 ,  H02M2001/0009 ,  H03K17/0822 ,  H03K17/0828 ,  H03K2217/0027

摘要： According to the invention different detection levels of a load current can be detected. Preferably, these detection levels are an overcurrent control level and/or a constant current control level. Said constant current control level can be a constant current value associated with chopper control or a value which judges an overload when a chopper control current exceeds a predetermined current level beyond a predetermined number of times. Said overcurrent control level can be a value corresponding to short-circuit-protection. Further, according to the invention a control circuit can control power semiconductor devices by decreasing a control voltage in a plurality of steps to zero in the case where an overcurrent detecting circuit outputs a detection signal corresponding to an overcurrent control level. According to a further aspect of the invention a power converter with a plurality of semiconductor devices is improved by control means and current detection circuits showing the above mentioned advantages of the invention.

摘要翻译： 根据本发明，可以检测负载电流的不同检测电平。 优选地，这些检测电平是过电流控制电平和/或恒定电流控制电平。 所述恒定电流控制电平可以是与斩波器控制相关联的恒定电流值，或者当斩波控制电流超过预定电流水平超过预定次数时判断过载的值。 所述过电流控制电平可以是对应于短路保护的值。 此外，根据本发明，在过电流检测电路输出与过电流控制电平相对应的检测信号的情况下，控制电路可以通过将多个步骤中的控制电压降低到零来控制功率半导体器件。 根据本发明的另一方面，通过控制装置和显示上述本发明优点的电流检测电路来改进具有多个半导体器件的功率转换器。

公开(公告)号：EP0338312B1

公开(公告)日：1993-01-13

申请号：EP89105833.1

申请日：1989-04-03

申请人： HITACHI, LTD.

发明人： Sakurai, Naoki ,  Mori, Mutsuhiro ,  Tanaka, Tomoyuki ,  Yasuda, Yasumichi ,  Nakano, Yasunori ,  Yatsuo, Tsutomu

IPC分类号： H01L29/72 ,  H01L29/08

CPC分类号： H01L29/0834 ,  H01L29/7398

公开(公告)号：EP1895595B8

公开(公告)日：2013-11-06

申请号：EP07021535.5

申请日：1997-10-17

申请人： Hitachi, Ltd.

发明人： Mori, Mutsuhiro ,  Uchino, Yoshihiro ,  Sakurai, Naoki ,  Kobayashi, Hideo ,  Sakano, Junichi

IPC分类号： H01L29/66 ,  H01L29/739 ,  H01L29/06

CPC分类号： H01L29/7398 ,  H01L29/0626 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/42368 ,  H01L29/7393 ,  H01L29/7395 ,  H01L29/7397

摘要： In the IGBT having at least a p+n-pn+ structure from the collector to the emitter, the n layer with higher density than the n- layer is formed between the n- layer and the p layer. The n layer is a barrier for holes, and as the holes are stored in the n- layer, ON voltage is reduced.

公开(公告)号：EP2256813A3

公开(公告)日：2012-09-05

申请号：EP10009398.8

申请日：2006-04-11

申请人： Hitachi, Ltd.

发明人： Arai, Taiga ,  Mori, Mutsuhiro ,  Oyama, Kazuhiro ,  Kohno, Yasuhiko ,  Sakurai, Naoki

IPC分类号： H01L29/08 ,  H01L29/739

CPC分类号： H01L29/0834 ,  H01L29/7395 ,  H01L29/7397

摘要： An IGBT according to the present invention has an N-layer having a larger carrier concentration and being deeper than a substrate on the collector side and a lowly injected p-layer realizing a low switching loss on the collector side, wherein the maximum of the carrier concentration of the p-layer on the collector side is 10 to 100 times of the maximum of the carrier concentration of the n-layer adjoining the p-layer and the turn-off loss is reduced without lowering a reverse bias safety operation area (RBSOA) of the IGBT.

公开(公告)号：EP2256813A2

公开(公告)日：2010-12-01

申请号：EP10009398.8

申请日：2006-04-11

申请人： Hitachi, Ltd.

发明人： Arai, Taiga ,  Mori, Mutsuhiro ,  Oyama, Kazuhiro ,  Kohno, Yasuhiko ,  Sakurai, Naoki

IPC分类号： H01L29/08 ,  H01L29/739

CPC分类号： H01L29/0834 ,  H01L29/7395 ,  H01L29/7397

摘要： An IGBT according to the present invention has an N-layer having a larger carrier concentration and being deeper than a substrate on the collector side and a lowly injected p-layer realizing a low switching loss on the collector side, wherein the maximum of the carrier concentration of the p-layer on the collector side is 10 to 100 times of the maximum of the carrier concentration of the n-layer adjoining the p-layer and the turn-off loss is reduced without lowering a reverse bias safety operation area (RBSOA) of the IGBT.

摘要翻译： 根据本发明的IGBT具有比集电极侧的衬底更深的载流子浓度的N层和在集电极侧实现低开关损耗的低注入p层，其中载流子的最大值 集电极侧的p层的浓度为与p层相邻的n层的载流子浓度的最大值的10〜100倍，关断损失降低，而不会降低反向偏置安全操作区域（RBSOA ）。